Experiments were performed to investigate the tensile properties of gold films ranging from 300 to 800 Å in thickness, which were obtained by vacuum evaporation. A SEM observation of the fracture process was made directly in the electron microscope.
The propagation was discontinuous and crystallographic, the fracture edges lying parallel to surface slip lines. The total strain of the film was usually of the order of 0.4 to 1.7% at fracture.
Observation of the fracture process of these films were performed directly in a scanning electron microscope and a transmission electron microscope.
Propagation of the fracture tip is discontinuous, and the fracture edge is parallel to the slip lines appearing at the surface of these films.

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This paper describes an experimental inverstigation of the thermionic emission properties of tungsten hairpin filament coated with lanthanum hexaboride films (LaB₆) by meams of ion beam sputter deposition method.
Measurement of brightness of the coated filament was parformed in a scanning electron microscope. As a result, the brightness of about 3.42×10⁴ A/cm²·ster. (20 kV), was obtained by LaB₆ coated tungsten hairpin filament.
Furthermore, it was found that resolution measured from the intervals between latexes obtained by S-450 (SEM) with LaB₆ coated was about 20 nm.

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A modulated gauge, which is a special Bayard-Alpert gauge with two additional concentric grids inside the electron collector grid, was investigated. The static characteristics of this gauge for three modulation methods were measured and compared; the method of modulating the potential of the intermittent grid is considered to be the best.
Much effort was made for the reduction of the modulation factors of background current (noise current). That is, the causes which induce the change of X-ray photo-current with the modulation, and the causes which induce the local pressure change by the change of electron stimulated gas desorption with the modulation, were carefully removed. Furthermore, to avoid the effects of reverse X-ray photo-emission and electron stimulated ion desorption, the intensities of the noise currents themselves resulting from these phenomena were reduced.
The collector currents in the “on” and “off” states (I_on and I_off) were measured at various pressures, and it was confirmed that the relationship between the difference-value (ΔI=I_on-I_off) and the pressure was sufficiently linear down to 8×10^-9 Pa (6×10^-11 Torr). It is believed that this linearity is kept also in the lower pressure region, although this could not be confirmed because of the insufficient accuracy of the DC electrometer used in this study.

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It has been confirmed that thin Si walls with the thickness of1000 Å can be fabricated on Si wafers by using an electron-beam lithography and a dry etching process. It has also been observed that superconducting V₃Si layers, whose transition onset temperatures T_c.on are strongly correlated with their thicknesses, are formed by the interaction of V with SiO_x. And it has been found that a double-layer structure VO_x/V₃Si/Si, or a triple-layer structure VO_x/V₃Si/SiO_x/Si or VO_xV₃Si/V₃Si_1+α/Si can be obtained by annealing evaporated V films on thinly oxidized Si wafers between650 and 1000°C. Based on the obtained results the possibility of the fabrication of planar S-SC-S-type Josephson junctions having V₃Si electrodes embedded in Si single crystal wafers has been discussed.

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