真空
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
25 巻, 12 号
選択された号の論文の6件中1~6を表示しています
  • 岩崎 裕
    1982 年 25 巻 12 号 p. 753-769
    発行日: 1982/12/20
    公開日: 2009/09/29
    ジャーナル フリー
  • 保坂 哲也
    1982 年 25 巻 12 号 p. 770-774
    発行日: 1982/12/20
    公開日: 2009/09/29
    ジャーナル フリー
    The dynamic tensile fracture of vacuum-evaporated gold films was observed directly in a scanning electron microscope by sticking the film on the rubber substrate with Aron-alpha and then painting the edges with Dotite. Gold films from 2200 to 4000Å in thickness in this study were heated at different temperatures ranging from 100 to 700°C. The dynamic fracture strain was found to increase as the grain of films was increased approximately 0.5μm in diameter. The electron microscope observations of the fractured films showed that the fracture propagation occurred along grain boundaries by plastic deformation within the grains. The fracture strain ratio (εds) of dynamic and static fracture gold films thicker than about 3000Å was usually of the order of 1.1 to 1.4.
  • 炭素, 窒素および酸素のK吸端への適用
    村中 健
    1982 年 25 巻 12 号 p. 775-780
    発行日: 1982/12/20
    公開日: 2009/09/29
    ジャーナル フリー
    Carbon, nitrogen and oxygen K-absorption spectroscopy by electric potential scanning has been demonstrated for polymer samples of collodion and formvar using nickel X-ray target. Besides representing these obtained spectra, some experimental aspects including background features without sample films are described for technical convenience. In addition, a recently proposed numerical procedure is applied to some of the observed spectra to obtain characteristic absorption functions which are not influenced by the incident X-ray intensity distributions.
  • 浦本 上進
    1982 年 25 巻 12 号 p. 781-787
    発行日: 1982/12/20
    公開日: 2009/09/29
    ジャーナル フリー
    First, a large diameter plasma with a uniform density (above 10 cmφ) is produced in a dc discharge by utilizing a magnetic field composed of a circular ferrite permanent magnet and usual magnetic coil, whose magnetic field guides the dc discharge through two intermediate electrode from a cathode to a large cylindrical anode and is reduced abruptly in the anode region to guide the discharge quickly toward the radial direction.
    Next, in order to apply this plasma source for the ion plating of large space, the large diameter plasma is focused in a short distance on a hearth by arranging another permanent magnet under the hearth, while the cylindrical large diameter anode is floated electrically and the dc discharge power is almost concentrated to the hearth.Thus, we can utilize a high density plasma region over a large space of ion plating in comparison with an ordinary method in which only a diffusional plasma region from a small plasma column is used.
  • 松本 智, 柏原 慶一, 牧 浩文, 新美 達也
    1982 年 25 巻 12 号 p. 788-794
    発行日: 1982/12/20
    公開日: 2009/09/29
    ジャーナル フリー
    Arsenic and phosphorus-implanted silicon substrates have been annealed by a furnace with higher temperature and shorter time than those of the conventional furnace annealing. Carrier concentrations obtained by differential van der Pauw measurements lie on the as-implanted distribution, showing a complete electrical activation with negligible redistribution of dopants. The experimental values of Hall mobility coincide with those of Irvin mobility, suggesting the regrowth of ion-implanted silicon. Diffusion profiles of dopants after the regrowth of ion-implanted silicon can be modelled by separating the regrowth and diffusion processes with an effective diffusion time.
  • 岡田 育夫
    1982 年 25 巻 12 号 p. 795-801
    発行日: 1982/12/20
    公開日: 2009/09/29
    ジャーナル フリー
    Thin films of molybdenum silicide were deposited on oxidized silicon wafers by RF ion plating. Molybdenum and silicon were supplied by electron beam evaporation and SiH4 gas, respectively. Argon gas was used for the stabilization of glow discharge. The Si/Mo atomic ratio in the film was changed from 1.4 to 2 by controlling the Mo evaporation rate. The effects of deposition condition, substrate potential, on film properties were investigated by X-ray diffraction analysis, sheet resistance and stress measurements. It was found that the films deposited at -2kV substrate potential are polycrystalline partly before annealing and change to be polycrystalline wholly after annealing for 5 min at 1000°C. The annealed films show good adhesion to oxidized silicon, low resistivity, and low film stress.
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