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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 26, Issue 1
Displaying 1-5 of 5 articles from this issue
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  • Diamond Synthesis at Low Pressure
    Nobuo SETAKA
    1983 Volume 26 Issue 1 Pages 7-14
    Published: January 20, 1983
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.26.7
    JOURNAL FREE ACCESS
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  • Electron Accelerated Plasma for Ion Plating of Refractory Metal
    Joshin URAMOTO
    1983 Volume 26 Issue 1 Pages 15-21
    Published: January 20, 1983
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.26.15
    JOURNAL FREE ACCESS
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    Discharge plasmas and electron beams for ion plating of refractory metals (especially, tungsten W) are researched. Then, two necessary conditions are required : a power concentration above 10 kW to hearth and a plasma production above a density of 1011/cc around the center of the plasma or the beam.
    First, a high energy electron beam (>10 keV) with a space charge limit (1A) can satisfy the power concentration, but the produced plasma density is too low because the ionization rate is very small.
    Next, a low voltage discharge in a gas can produce a plasma source with a sufficient density, but the power concentration to hearth is not effective (only about 1/4 of total discharge power). Therefore, the large discahrge current (>1000A) is required while the power loss and the discharge cathode emission become serious.
    To satisfy the two necessary conditions for ion plating of W, we propose to use an electron accelerated plasma in which the electrons are accelerated locally along a magnetic field, and have an energy of a few hundred electron volt and a current of several tens ampere.
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  • Electroforming and Electron Emisson of Carbon Thin Films
    Hisashi ARAKI, Okikazu HIRABARU, Teruo HANAWA
    1983 Volume 26 Issue 1 Pages 22-29
    Published: January 20, 1983
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.26.22
    JOURNAL FREE ACCESS
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    The purposes of the present work were to develop the fabrication techniques of a thin film electron emitter. Devices with good reproducibility and stability were obtained when carbon films were deposited on a Corning 7059 glass rubbed with emery paper (#1000), and were heat-treated at 600°C in high vacuum.
    When the input power density to the devices attained to about 2.4×108 W/cm3, the carbon films were locally broken due to the joule heating and electron emission from the devices became to be detected. The I-V characteristics after the forming were similar to those of the electroformed MIM type devices, and the emission efficiencies were (26) ×10-4.
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  • Photovoltaic Properties of Thin Polymer Films
    Ken YAMASHITA, Tatsuya SUZUKI, Taro HINO
    1983 Volume 26 Issue 1 Pages 30-34
    Published: January 20, 1983
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.26.30
    JOURNAL FREE ACCESS
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    Photovoltaic properties of thin films of PVK-TNF charge transfer complex have been investigated. Thin films of thickness between 10 and 500 nm were formed by the solution casting method. The film thickness can be reproductively controlled by the concentration of polymer solution. Photovoltaic properties were measured in Au-(thin film)-Al cell as a function of film thickness.
    Peaks of photovoltaic action spectrum coincide with those of light absorption spectrum respectively. The photovoltaic conversion efficiency increases with reducing film thickness, untill the efficiency becomes maximum value (about 0.01%) at the thickness of about 100 nm.
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  • Annealing Effects in a-Si:H Thin Films Prepared by Glow Discharge Method
    Hiroaki KAKINUMA, Satoshi NISHIKAWA, Toshiyuki IWABUCHI, Tsukasa WATAN ...
    1983 Volume 26 Issue 1 Pages 35-44
    Published: January 20, 1983
    Released on J-STAGE: September 29, 2009
    DOIhttps://doi.org/10.3131/jvsj.26.35
    JOURNAL FREE ACCESS
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    Annealing effects on photoconductive, morphologic and IR absorptional properties of glow discharge a-Si:H films are investigated. Samples are decomposited with pure silane changing two decomposition parameters, growth rate and substrate temperature (Ts).
    Photoconductivity (σP) of low Ts samples is extremely low but steeply increases by 3 orders at certain Ts as Ts is raised, and the turning Ts depends on the growth rate.
    The σP of the low Ts samples increases by 12 orders with annealing up to250°C. This large change corresponds to the disappearance of the grain boundary observed by TEM.
    Dark conductivity (σd) at room temperature shows various transport mechanism depending on the deposition condition.
    Localized states density at Ef estimated from γ (σP∝Fγ, F : intensity) decreases as Ts is raised or annealed up to 150250°C.
    These results are discussed in some detail.
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