Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 26, Issue 11
Displaying 1-5 of 5 articles from this issue
  • Kenshi SHIRAI
    1983 Volume 26 Issue 11 Pages 811-830
    Published: November 20, 1983
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
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  • Yasushi OHYAMA, Yoshimi SHIOYA, Mamoru MAEDA, Mikio TAKAGI
    1983 Volume 26 Issue 11 Pages 831-836
    Published: November 20, 1983
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    Refractory metals and their silicides are the major candidates for low resistivity interconnect material for replacing polysilicon. Their films are commonly deposited by co-sputtering or evaporation method. In this paper, tungsten-silicide films are prepared by plasma CVD and their properties are studied by means of X-ray diffraction, Auger electron spectroscopy (AES), and Rutherford back-scattering (RBS). The film properties depend on souce gas ratio (SiH4 to WF6), discharge frequency and annealing temperature.
    When the source gas ratio is small (SiH4/WF6=1), pure tungsten films are obtained, whereas tungsten-silicide films are obtained, when the ratio is large (SiH4/WF6=4). By means of RBS, the ratio of Si/W is found to increases from 0.1 to 12 with the source gas ratio. When the ratio of Si/W=0.1, the resistivity decreases to 1×10-5 ohm-cm after annealing. The decreasing rate depends on deposit frequency and it is found the difference is due to the structural difference of the film.
    It is found by X-ray diffraction analysis that the films deposited with small gas ratio had peaks reflecting surface orientations, most intensive of which are W (200) and W (110) for those of 50 kHz and 13.56 MHz, respectively. When the source gas ratio is large, however, it shows the peaks typical of bulk tunsten at as-deposited. After annealing, only films deposited at 50 kHz show tungsten-silicide peaks.
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  • Takakazu TAKAHASHI, Junsaku YOSHIDA, Fumio TAKEDA
    1983 Volume 26 Issue 11 Pages 837-845
    Published: November 20, 1983
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    On an improved DC planar magnetron sputtering system using a solenoid coil outside a pyrex glass chamber, the magnetic field distributions near the target surface and DC discharge characteristics are investigated for various solenoid coil currents. As the improved magnetron system is symmetric with respect to the center pole, the measuring area of magnetic field distribution is two-dimensional plane. Sputtering is carried out at the pressure of 0.083 Pa of pure argon or nitrogen gas. Ti disk is used as a target. As a solenoid coil current which flowing direction is suitably chosen increases from 1 to 4 A (DC), the parallel component of magnetic field to the target surface and DC discharge current increase, but both DC discharge voltage and sparking voltage decrease. And DC discharge voltage and sparking voltage in an atomosphere of argon gas are smaller than that in nitrogen gas.
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  • Energy Sweep Rate and Time Constant
    Akihiro TANAKA, Teiichi HOMMA
    1983 Volume 26 Issue 11 Pages 846-858
    Published: November 20, 1983
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    Among the several possible factors, that is, 1) primary energy of the incident electron, 2) geometrical distribution of the incident electron on the specimens, 3) geometrical alignment between the electron and the analyzer, 4) stray magnetic and electric fields, 5) modulation energy of the analyzer, 6) response of electron multiplier, 7) energy sweep rate of the analyzer, 8) time constant of lock-in amplifier, and 9) response of recording system, which may affect a shape of the measured AES spectrum, the energy sweep rate and the time constant are investigated for finding improved operation procedures. It is shown that the spectrum shape measured is determined uniquely by introducing the trace factor which is derived from the energy sweep rate and the time constant. The optimum value of the trace factor is determined and examined for performing a reliable measurement with a proper accuracy. If the apparatus function is written as a function of the trace factor including the time constant in exponential decay form, it is possible to estimate the original profile of the spectrum by a numerical procedure. Concerning with this deconvolution procedure, an improvement of S/N is examined. We discuss a turning effect on the noise, its reduction, and a distortion due to time constant in repeated measurement.
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  • Kazuo ISHIKAWA, Masaki TANEMURA, Eiju MATSUNAGA
    1983 Volume 26 Issue 11 Pages 859-864
    Published: November 20, 1983
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    The phenomenon was studied by Auger electron spectroscopy in which the appearance of sulfur on a surface of tungsten is enhanced when it is bombarded by an electron beam in an ultra-high vacuum. An additional tungsten target was provided near a tungsten specimen, and the appearing rates of sulfur on the specimen were compared when the specimen and the target were respectively bombarded by an electron beam. As a result, for the specimen used here, it was confirmed that the sulfur appearance enhanced by electron bombardment was not caused by the segregation from the bulk but was resulted from the deposition from outside of the specimen. The surface distribution of sulfur showed a sharp peak at the point of bombardment; this was elucidated as being the result of the concentration of surface sulfur towards the bombarded area of the surface.
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