Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 28, Issue 11
Displaying 1-5 of 5 articles from this issue
  • Yutaka KATO, Kenji TSUKAMOTO, Eizo ISOYAMA, Toshimitsu UCHIYAMA
    1985 Volume 28 Issue 11 Pages 785-790
    Published: November 20, 1985
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
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  • Shigemi YUGO, Suguru IWASAWA, Tadamasa KIMURA, Shigetoshi YUKIZANE
    1985 Volume 28 Issue 11 Pages 791-795
    Published: November 20, 1985
    Released on J-STAGE: January 28, 2010
    JOURNAL FREE ACCESS
    We studied the properties of films produced by cracking methane gases in a microwave discharge in the temperature range 700-1000°C, methane concentrations from 1 to 6% and discharge pressures from 300-6000 Pa.
    The deposits were identified by secondary electron microscopy and electron diffraction. It was found that the structure of deposited films could be classified into 5 types by deposition conditions; (amorphous, diamond, a, β-SiC and graphite).
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  • Kimio UEDA, Katsuyoshi HAMASAKI, Isao YAMADA, Tsutomu YAMASHITA, Trano ...
    1985 Volume 28 Issue 11 Pages 796-802
    Published: November 20, 1985
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    The epitaxial growth of NbN films deposited on rf-sputtered MgO films have been prepared by rf-magnetron sputtering in N2/Ar atomosphere. These epitaxially growth films of (200)Mgo//(200)NbN orientation were formed on various kinds of substrates. The reactively sputtered NbN on MgO films had high critical temperature. The Tc value of NbN (25nm) /MgO (80nm) film is about 15.7 K. Also all-refractry Josephson tunnel junctions were formed without breaking vacuum, producing the epitaxially growth NbN/MgO/NbN sandwitch on MgO thin films on unoxidized Si substrate. The epitaxial junction has the high sum-gap voltage, and shows excellent I-V characteristics.
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  • Tadashi SAWADA, Masahide NAKAMURA
    1985 Volume 28 Issue 11 Pages 803-809
    Published: November 20, 1985
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    This type of seal can seal fluids with zero leakage by means of its pumping action, but even if a small leakage occurs in such a case as labyrinth seals, it is sometimes necessary to seal a higher pressure difference (or pressure ratio) than one which is achieved under zero leakage conditions.
    A theory for the performance of the seal with a leakage is presented, and the seals with various geometries. The results show that spiral grooves work as the sealing elements only when the rate of leakage is small and that the grooves promote leak when the rate of leakage exceeds a certain value.
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  • Masao WATANABE, Masanori HASHIMOTO
    1985 Volume 28 Issue 11 Pages 810-813
    Published: November 20, 1985
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    We have developed a Laser Raman-Ellipsometry combined system to analyze solid surfaces in situ under chemical reactions. Reaction products in gas phase are analyzed by a mass spectrometer, a surface layer formed by the reaction is analyzed by an Ellipsometer, and surface species by a Raman spectrometer. The system is applied to study the dissociative reaction of CO gas on an iron surface under 1 atm. pressure. C and O atoms from CO gas diffuse into the interior of the Fe to form a diffusion layer, whose thickness and dielectric constant are determined. After formation of the diffusion layer of 11 nm an Fe3O4 oxide formation occurs from the surface. We have found that the Fe3O4 layer of 16 nm generates the A1g phonon mode at 672cm-1 compared with 675cm-1 from a bulk Fe3O4. Two kinds of surface Raman bands induced from CO adsorbed on the Fe3O4 are observed at 1121cm-1 and 1812cm-1, respectively, which seem to be surface-enhanced. It is concluded that the system is a very powerful tool to study solid surfaces under chemical reaction conditions.
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