Bombardment damage on a silicon surface is induced by reactive ion etching (RIE) with a CF
4 discharge of 13.56 MHz in a parallel plate reactor. The damage was removed by the successive treatment with an NF
3 discharge.
The ohmic contact of Au/p-Si, which was converted to the rectifying contact by ion bombardment in RIE with CF
4, was recovered by etching with NF
3, and the damage in rectifying characteristics of Au/n-Si contact by CF
4 plasma etching also was recovered by NF
3 plasma etching.
The recovering effect was obtained by removing the damaged layer of 1.7μm thickness and 15nm thickness for the cathode coupling discharge and the anode coupling discharge respectively.
In conclusion, the recovery by the anode coupling discharge is more effective than that by the cathode coupling one.
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