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Volume 29, Issue 6
Displaying 1-5 of 5 articles from this issue
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Yoshio MURAKAMI, Yasuo SHIMOMURA, Tetsuya ABE, Kenjiro OBARA1986 Volume 29 Issue 6 Pages 245-250
Published: June 20, 1986
Released on J-STAGE: October 20, 2009
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Nobuo SAITO, Norihiko TANAKA, Takeshi YAMADA, Isamu NAKAAKI, Tomuo YAM ...1986 Volume 29 Issue 6 Pages 251-258
Published: June 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSTwo kinds of amorphous Si1-xCx H films have been prepared by the magnetron sputtering method, using (I) a composite target of silicon and graphite in a gas mixture of argon and hydrogen, and (II) a silicon target in a gas mixture of argon and methane. The dependence of the optical, structural, electrical and optoelectronic properties on the carbon content x has been investigated. In the case of (I), although the formation of the carbon clusters results in the composition-independent feature of the optical band gap below about x=0.5, the dark conductivity shows a minimum at about x=0.2, owing partly to the formation of SiC bonds and mainly to the decrease in the hopping conduction, which suggests the reorganization of defect-rich structure of sputter-deposited undoped amorphous Si. This phenomenon is more appreciable in the case of (II) where the photoconductivity for the film with about x=0.2 increases by about two orders of magnitude compared with sputter-deposited undoped amorphous Si: H.View full abstractDownload PDF (956K) -
Tomihiro HASHIZUME, Akiko KOBAYASHI, Toshio SAKURAI1986 Volume 29 Issue 6 Pages 259-267
Published: June 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSA newly developed focusing-type time-of-flight atom-probe (field ion microscope) was applied for the detailed investigation of surface segregation in Ni-Cu binary alloys over the entire composition range. Strong enrichment of copper was observed in the Ni-rich alloys, in agreement with previous reports. The surface enrichment factor and heat of Cu segregation were determined experimentally and were found to agree with various theoretical results. Cu segregation was limited to the topmost surface layer in almost all of the cases. The adjacent subsurface region exihibited small oscillations in the composition. A surprising finding was that nickel segregated to the surface in the Ni solute region (less than 16 at.% Ni). The Ni segregation extended over several layers in the near-surface region, a marked difference compared to the case of the Cu segregation. At present no theory on surface segregation can explain the Ni segregation.View full abstractDownload PDF (1113K) -
Tsutomu UESUGI, Susumu SUGIYAMA, Mitsuharu TAKIGAWA1986 Volume 29 Issue 6 Pages 268-274
Published: June 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSRecently, plasma-CVD silicon nitride has been used for LSI passivation films. In this study, to deposit SiN films by the plasma-CVD method, SiH4 and N2 are used as reactant gases. The correlations between SiH4/N2 gas ratio and properties of SiN films were investigated. When SiH4/N2 gas ratio is varied in a range from 1.0% to 2.5%, the properties of SiN films are varied as follows; deposition rate 200-350 Å/min. refractive index 1.77-2.15, Si/N ratio 0.5-2.0. When SiH4/N2 gas ratio becomes smaller, the oxygen content is remarkably increased, and some properties of SiN as passivation films deteriorate with the oxygen content in the films. The optimum SiH4/N2 gas ratio in this study was 2.0%, at which the buffered HF etch rate was the minimum value of 60 Å/min., the electric field strength at the step region was the maximum value of 4.8 MV/cm and the Na+ blocking effect was the strongest.View full abstractDownload PDF (1004K) -
Gen'ichi HORIKOSHI1986 Volume 29 Issue 6 Pages 275-278
Published: June 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (529K)
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