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Volume 29, Issue 9
Displaying 1-4 of 4 articles from this issue
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Shuichi KANAMORI1986 Volume 29 Issue 9 Pages 418-427
Published: September 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSTwo groups of reactively sputtered TiN films, gold-yellow films (G films) with low resistivity and high compressive internal stress, and brown-black films (B films) with high resistivity, which are formed with and without the negative substrate bias, were examined for diffusion barrier application.
Microstructures and compositions were investigated by AES, EPMA and XD. The G and B films have a fine-grain and a columnar-arranged morphological structure respectively. Both films exhibit a cubic structure strongly oriented toward the (111) plane which is parallel to the substrate surface.
The internal stress in the G film originates from lattice expansion which is probably due to the incorporation of the excess nitrogen atoms. The expanded lattice parameter was calculated from the corrected interplanar spacing after the silicon substrate was removed.
The superior diffusion barrier capability of the B film, which was demonstrated by the Au/Pt/TiN/Ti metal system on thick polysilicon, was assumed to be due to the reduction of grain boundary diffusion by the action of impurities located in the intercolumnar layers. This is supported by film analysis, etching behavior, and XPS studies.View full abstractDownload PDF (1287K) -
Masakatsu TAKEMOTO, Ichiro TAKANO, Shoji ISOBE, Kiichi HOJOU1986 Volume 29 Issue 9 Pages 428-433
Published: September 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSHardness and wear resistance properties of TiN coating films formed by a newly-designed, large current ion implantation machine were studied. The ion beam of this machine has current and a diameter larger than conventional implantation machines in order to improve surface layer properties of metals and others. This machine provides the maximum ion current of 0.2 A (continuously) at 40 kV or 0.4 A at 20 kV.
Compared with other samples, implantation doses of 6×1017 N+ /cm2 into titanium deposited films of 0.3 micrometer thickness on SUS304 plate give the best friction coefficient within 6 meter long dry sliding length under heavily weighted condition. Optimum relation between ion doses and thicknesses of titanium layer was found. The coated surfaces of the samples were observed by a scanning electron microscopy and were analyzed by an electron spectroscopy for chemical analysis (ESCA).View full abstractDownload PDF (1025K) -
Hirofumi FUKUMOTO, Hiroaki MYOREN, Takeshi IMURA, Yukio OSAKA1986 Volume 29 Issue 9 Pages 434-438
Published: September 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSThe thermal-oxidation rate of amorphous Si1-xSnx alloy films was found to be remarkably large at lower temperatures (_??_400°C). The rate in the oxygen atmosphere (760 Torr) was estimated to be more than 20 Å/min at 350°C for the film with x0.38. Chemical analysis of the resulting oxide has revealed that the oxidation of tin atoms increases dramatically above 200°C and the oxidation of silicon atoms is enhanced with increase of tin content in the films. The oxidation mechanism seems to be related both to melting of Sn in films and to segregation of Si which results from the formation of polycrystalline β-Sn.View full abstractDownload PDF (562K) -
Yutaka KATO, Eizo ISOYAMA, Tomio KUBO, Takashi MOMOSE, Hajime ISHIMARU1986 Volume 29 Issue 9 Pages 439-444
Published: September 20, 1986
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (1836K)
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