巻号一覧
30 巻, 6 号
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平野 治男, 吉村 長光1987 年 30 巻 6 号 p. 531-537
発行日: 1987/06/20
公開日: 2009/10/20
ジャーナル フリーPDF形式でダウンロード (808K) -
深さ方向分析への応用関根 哲, 安藤 善之1987 年 30 巻 6 号 p. 538-545
発行日: 1987/06/20
公開日: 2009/10/20
ジャーナル フリーIn Auger electron spectroscopy (AES), the filter-fit method, which was developed originally for the analysis of energy dispersive X-ray spectra, is applied to resolve overlapped peaks in the presence of continuum background, using the least-squares fitting (LSF) procedure after the prefiltering of spectra. With the filter-fit method, the background is first suppressed by filtration with a proper digital filter, and then the filtered complex Auger peaks are resolved by LSF calculation using filtered reference peaks. The analysis accuracy improves greatly over the conventional method because the disturbance by the background is minimized. A new depth compositional analysis routine providing the filter-fit procedure was successfully applied to the analysis of a thin TiN layer deposited on a glass substrate, in which both Ti and N profiles were obtained separately, though the two peaks overlapped each other.抄録全体を表示PDF形式でダウンロード (931K) -
木村 浩, 渡辺 弘, 石原 哲, 鈴木 義雄, 伊東 孝1987 年 30 巻 6 号 p. 546-554
発行日: 1987/06/20
公開日: 2009/10/20
ジャーナル フリーIndium tin oxide (ITO) films were deposited by DC magnetron sputtering using ITO targets. Low resistivity of 1.4×10-4 Ω·cm and high transmittance of 85% at 550 nm were obtained under optimum conditions, depending on a SnO2 content (020 wt.%) in the ITO targets, substrate temperature, and oxygen partial pressure. Films with the low resistivity can be obtained in rather wide sputtering conditions in comparison with in using metal targets. Due to a change in the sputtering conditions, especially the substrate temperature, the optimum SnO2 content in the target was changed. When the substrate was at room temperature, the film with a resistivity of 4.0×10-4 Ω ·cm was prepared for the target of 5 wt.%SnO2, and at 400°C a film with 1.4×10-4 Ω·cm was prepared for the target with 10 wt.%SnO2, with good reproducibility. In these cases, decreasing of SnO2 content in the films was found and (400) preferential orientation of indium oxide (In2O3) was observed in the films by X-ray diffraction technique.抄録全体を表示PDF形式でダウンロード (958K) -
府山 盛明, 中野 文雄, 曽我 太佐男, 森尻 誠, 舟生 征夫, 布川 功1987 年 30 巻 6 号 p. 555-564
発行日: 1987/06/20
公開日: 2009/10/20
ジャーナル フリーMounting technologies with high reliability were investigated for flip chip bonding of LSI chips on glass substrate in chip on type liquid crystal displays.
For metallic film conductor on glass substrate, four layered structure of Cr-Ni-Cu-Cr was found to be the best combination. Best selective etching solution for each metal was found and metal thicknesses were optimized.
For protection material of metallic film, sputtered SiO2 film was chosen because of good reliability in operating life test. In order to obtain highly reliable LSI chips under thermal shock test condition, the thermal expansion coefficient of covering epoxy resin was taken to be nearlly equal to that of 95Pb-5Sn solder by controlling amount of added Si powder.抄録全体を表示PDF形式でダウンロード (1392K)
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