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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 30, Issue 9
Displaying 1-5 of 5 articles from this issue
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  • Magnetically Soft Amorphous Alloys Produced by Sputtering
    Yutaka SHIMADA
    1987 Volume 30 Issue 9 Pages 699-705
    Published: September 20, 1987
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.30.699
    JOURNAL FREE ACCESS
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  • Quartz Friction Vacuum Gauge and the Theory of a Viscosity Vacuum Gauge
    Kiyohide KOKUBUN, Masahiro HIRATA, Masatoshi ONO, Hiroshi MURAKAMI, Yo ...
    1987 Volume 30 Issue 9 Pages 706-714
    Published: September 20, 1987
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.30.706
    JOURNAL FREE ACCESS
    Download PDF (1344K)
  • Ion Source Using Scattering Effect at Magnetic Neutral Point
    Yasuhisa SAKURAI, Tetsuya AKITSU, Hidenori MATSUZAWA
    1987 Volume 30 Issue 9 Pages 715-721
    Published: September 20, 1987
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.30.715
    JOURNAL FREE ACCESS
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    Two types of ion sources with a single magnetron injection gun-type-thermionic cathode were fabricated and tested. The cathode was positioned on the extended line of the cylindrical axis. These sources have magnetic multipole linecusps with different directions. One of them had azimuthally oriented magnetic field, and the other had axially oriented one. The measurement of ion current density and ion energy distribution revealed that the beam profile became a hollow-beam whose intensity increases in proportion to discharge current, and that the ion source with azially oriented magnetic field produces ion beams 450 times higher than those with azimuthally oriented magnetic field. Single extraction grid-ion source is also compared in extracted beam profile with the two grid-ion source.
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  • Characterization of SiNx Film by Room Temperature Low Frequency (50 Hz) Plasma CVD
    Noriaki ODA, Mitsuo SHIMOZUMA, Hiroaki TAGASHIRA
    1987 Volume 30 Issue 9 Pages 722-728
    Published: September 20, 1987
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.30.722
    JOURNAL FREE ACCESS
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    This paper reports the deposition of silicon nitride films on the substrate held at room temperature using 50 Hz plasma CVD with monosilane and nitrogen mixture.
    Characteristics of the silicon nitride films deposited on 5 inches Si wafer were as follows. Refractive index of the silicon nitride films was 2.0, and resistivity and breakdown field strength were about 1015 Ω cm and above 106 V/cm, respectively. The distribution of film thickness on 5 inches Si wafer was 1000ű30Å. Fixed charge density and suface state density of Al/SiNx/SiO2/Si (MNOS) were about 1.5×1011 cm-2 and 8×1010 cm-2eV-1, respectively. Substrate temperature dependence of the film properties were also discussed. As high the temperature (<200°C) is, the films become Si rich. However electrical properties were not changed.
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  • [title in Japanese]
    Teiichi HOMMA, Yoshimasa MURATA, Hajime TAKAMATSU, Yoshinori MINETA, A ...
    1987 Volume 30 Issue 9 Pages 729-742
    Published: September 20, 1987
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.30.729
    JOURNAL FREE ACCESS
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