Shinku

Dry Etching Endpoint Monitor by Scribe-Line Detection Method

Takashi KAMIMURA, Tooru OOTSUBO, Susumu AIUCHI

1988 Volume 31 Issue 4 Pages 253-258
Published: April 20, 1988
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.31.253

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Due to the recent trend toward the use of thinner underlayers in VLSI chips, more precise endpoint monitoring is needed for etching processes. An endpoint monitoring method has been developed, which uses scribe-line detection through direct observation of film thickness. This procedure determines the endpoint by detecting the reflection intensity from scribe-lines on a wafer surface during etching processes. The special feature of this system is to detect the intensity of reflected light with a continuous spectrum, which uses a tungsten-lamp for irradiation, and an ND filter and a CCD sensor for detection. For Poly-Si etching, the detection of reflected light with a continuous spectrum (wave length : 350 to 1050 nm) from Poly-Si is able to decide two points of residual thickness (600±50 Å, 200±50 Å), which are very close to the endpoint.

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The Measurement of Pumping Speed in Ultrahigh Vacuum by the Conductance Modulation Method

Keiko TERADA, Tatsuo OKANO, Yutaka TUZI

1988 Volume 31 Issue 4 Pages 259-264
Published: April 20, 1988
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.31.259

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The conductance modulation method has three advantages useful for the measurement of pumping speed in ultrahigh vacuum region. First, the flow rate of gas for the speed measurement is not required if the rate is constant. Secondly, the absolute value of pressure in the test dome is also not necessary if the sensitivity of pressure gauge is unchanged during the measurement. Thirdly, the effects of the positions of pressure gauge and gas inlet in the test dome are relatively small.
The orifice system composed of three discs is used as the variable conductance which has two definit values of conductance determined by the Monte Carlo calculation. One of the two values can be selected from outside of the ultrahigh vacuum chamber. The pumping speed of a combination pump made of a sputter ion pump and a titanium getter pump can be successfuly measured down to 10^-7 Pa for nitrogen and hydrogen.

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Plasma-Activaled CVD

Hideo SAKAI, Takeo YOSHIMI

1988 Volume 31 Issue 4 Pages 265-270
Published: April 20, 1988
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.31.265

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[in Japanese]

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Characteristics and Application of High Temperature Non Equilibrium Plasma

Hideo MITO, Atushi SEKIGUCHI

1988 Volume 31 Issue 4 Pages 271-278
Published: April 20, 1988
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.31.271

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ECR Plasma CVD Technology

Seitaro MATSUO

1988 Volume 31 Issue 4 Pages 279-285
Published: April 20, 1988
Released on J-STAGE: January 28, 2010

DOIhttps://doi.org/10.3131/jvsj.31.279

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[in Japanese]

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[title in Japanese]

Hazime SHIMIZU, Kazue TAKAHASHI

1988 Volume 31 Issue 4 Pages 286-294
Published: April 20, 1988
Released on J-STAGE: September 29, 2009

DOIhttps://doi.org/10.3131/jvsj.31.286

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