Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 33, Issue 12
Displaying 1-8 of 8 articles from this issue
  • Nobuyoshi HATTORI, Takaaki FUKUMOTO, Tadao KATO
    1990 Volume 33 Issue 12 Pages 895-899
    Published: December 20, 1990
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
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  • including Aerosol in Air Flow to Dust in Vacuum
    Yukinari SATO
    1990 Volume 33 Issue 12 Pages 900-908
    Published: December 20, 1990
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
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  • Yoshiyasu MAEBA, Hiroyuki YAMAKAWA
    1990 Volume 33 Issue 12 Pages 909-915
    Published: December 20, 1990
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
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  • Osamu MACHIDA, Jun NAGATA, Nobuhiro NOTO, Kintaro MORI
    1990 Volume 33 Issue 12 Pages 916-921
    Published: December 20, 1990
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    TiC films were prepared by dual ion-beam sputtering appratus using a cotarget of titanium and graphite. Some of the films were bombarded by hydrogen ions with an energy range from 5 keV to 10 keV during deposition.
    The microhardness of the TiC films was measured by the Knoop hardness tester. It was observed that the hardness of the film with hydrogen ion bombardment was 1.5 times harder in comparson to the hardness of the film without bombardment.
    The atomic composition and the chemical bonding states of the film were analyzed by Auger electron spectroscopy and X-ray photoelectron spectroscopy.
    Two types of carbon, carbidelike and graphitelike carbon, were observed in the TiC film. It is suggested that in the film with hydrogen ion bombardment, the dominant formation of carbidelike carbon increases the film hardness.
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  • Tadayoshi HONDA, Yoshiko OKUI, Yasuhisa SATO, Masamichi YOSHIDA
    1990 Volume 33 Issue 12 Pages 922-927
    Published: December 20, 1990
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    The thickness of Al thin films on 1000Å SiO2 was estimated by using X-ray fluorescence (XRF). It was found thatÅ when the films were less than 1000Å thick, the number of Al XRF counts was directly proportional to the Al thickness. Therefore, Al thickness is given by t=a(If-Bg) within an error of 3.0%, where a and Bg are constant and background noise, and If is the Al XRF count. In the Al film thicknes range of 2000Å to 1.2 μm, XRF counts vs. Al thickness becomes nonlinear due to Al self-absorption. The Al thickness was given by t=-a·ln(1-(If-Bg/Imax)), where Imax is maximum value measured by Al XRF. The maximum relative error was 1.6%. However, for the Al film thickness range of 1000Å to 2000Å, the relative error was 9.7%.
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  • Noritada SATO, Yuko SAITO, Atsushi UEDA, Megumi NAGANO
    1990 Volume 33 Issue 12 Pages 928-933
    Published: December 20, 1990
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    In Auger electron spectroscopy (AES) on insulating materials, Auger peaks are tend to be disturbed by background noise due to negative charging of the material surface. To suppress this noise, we discribed a method to reduce the surface negative charges by means of simultaneous helium ion bombardment and discussed the mechanism of the surface charge reduction which improve the AES spectrum and AES peak shifts. By neutralizing the negative charges with the optimum amount of helium ion bombardment, maximum AES signal intensity and normal Auger electron energy can be obtained. Excess negative or positive charges disturb the escaping Auger electrons and Auger eneregy due to coulomb force. We estimated the neutralizing effects by examining Auger peak intensity and peak energy at common oxygen Auger peakes of Al2O3, SiO2 and SrTiO3 with various He+ ion beam currents.
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  • Hiromi HISAMATSU, Masayuki SHIMAMOTO, Ken-ichi KANAZAWA, Hajime ISHIMA ...
    1990 Volume 33 Issue 12 Pages 934-939
    Published: December 20, 1990
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    Download PDF (676K)
  • Takeshi YAMAGUCHI, Yoshitaka YANAO
    1990 Volume 33 Issue 12 Pages 940-944
    Published: December 20, 1990
    Released on J-STAGE: September 29, 2009
    JOURNAL FREE ACCESS
    Download PDF (895K)
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