1986年度ノーベル賞受賞者,E. Ruska博士が1938年に透過型電子顕微鏡を発明して以来,各種の電子顕微鏡(反射,走査,透過走査,干渉,ホログラム,ミュラー及びトンネル型)が誕生し,医生物学を始め,金属,半導体,薄膜などの構造解析や,DNAや蛋白の分子構造の観察とその変化現象の追跡に役立っている.現在の臨床医学方面では,各種分析装置の実測データを分類整理し,直接オンライン電子顕微鏡で観察しながら,画像処理装置によって照合し,正確な微細構造による信号を摘出し,診断を行うまでに発展した.本報告では高分解能構造解析のための画像処理装置の実際と,特に高分解能撮影のためのノイズ除去,試料の汚れ,収差補正と焦点合わせ用on-line diffractometerについて説明し,フーリエ合成法によるCdSe結晶の構造解析と画像処理による三次元立体構築の実例を示す.さらにイオンビーム・スパッター蒸着薄膜構造解析のためのバンドパス・フィルターの効用を追加した.

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Surface-altered layers of TiN irradiated with argon ions under various conditions of ion energy from 1.5 to 5 keV and incidence angle from 25° to 90° were studied by means of XPS. Some depression in the nitrogen content is caused by the irradiation. The extent of the depression increases nearly in proportion to the incidence angle and does not vary with ion energy. The depth profiles of nitrogen in the altered layers were simulated with deconvoluting angle-resolved XPS data based on a multiple layer model. As the incidence angle and/or ion energy becomes larger, the altered layer becomes thicker. At low incidence angle, some rise in the nitrogen content in the top surface is observed. From the results, it is seen that the Ar ion etching conditions of lower ion energy and smaller incidence angle are useful for avoiding significant influence from an altered alyer in in-depth analysis by XPS.

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The oxidation velocities of isotropic graphite, pyrolytic carbon, silicon- and boron-mixed graphites were measured by using a vaccum microbalance of Cahn RG-type under an oxygen pressure of 1.33 kPa (10 Torr) and a temperature range from 650 to 900°C. For isotropic graphites with different ash concentrations, it was observed that the oxidation velocity increased with higher ash concentration when the graphite temperature was below 750°C. The pyrolytic carbon had the oxidation velocity of approximately one order of magnitude smaller than that of the isotropic graphite. The oxidation velocity of silicon-mixed graphite linearly decreased with the increase of silicon concentration. In the case of the boron-mixed graphite, the oxidation was considerably suppressed by the boron content and the weight gain was observed due to the formation of B₂0₃ when the boron concentration exceeded 10%.

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Cr vapor evaporated by an EB-gun in high vacuum. It was found from the measurement results of discharge characteristics that the anode voltage (VA) dependence of discharge current (Id) is represented as Id∝ (VA)ⁿ with inflection points (VA=26, 47 V) at the VA to the 3rd and 4th ionization potentials of Cr. It can be assumed that the character of the charged particles changes the inflection points. These studies have been developed for the properties of Cr films deposited on various VA on 7059 glass and Si substrates. The relations to VA of the crystal orientation, electrical properties and optical reflection of the visible region of Cr films have been discussed.

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Thin films of γ-Fe₂O₃ have been studied for application in high-density magnetic recording media because of their superior magnetic properties, wear resistance and chemical stability. Several processes were proposed for the fabrication of the γ-Fe₂O₃. We have been investigating the γ-Fe₂O₃ films preparation process consisting of Fe₃O₄ film deposition and heat treatment. Fe₃O₄ film were deposited by the reactive RF magnetron sputtering of an iron tatget in Ar+ O₂ atmosphere and then transformed into γ-Fe₂O₃ films by the oxidation heat treatment. We report on the high rate of deposition of Fe₃O₄ films by magnetron sputtering. The deposition rate of Fe₃O₄ film by magnetron sputtering was about five times higher than that by diode sputtering. Fe₃O₄ films were transformed into γ-Fe₂O₃ films by heat treatment in air. The magnetic properties of γ-Fe₂O₃ films obtained in the above experiment were as good as those by the diode sputtering method.

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