Characteristics of SiN
x thin films for a magneto-optical recording disk have been studied. SiN
x thin film has a suitable refractive index as an enhancing layer for the magneto-optical effect. Pinhole density of SiN
x film is small enough and internal stress and refractive index are stable in the films deposited under moderate sputtering conditions. Therefore SiN
x film is also suitable as a protective layer of the magneto-optical recording layer. Sputtering condition dependences of the characteritics of SiN
x films were investigated for three sputtering methods : 1) RF sputtering, 2) RF reactive sputtering and 3) DC reactive sputtering. The highest deposition rate was obtained by DC reactive sputtering. Higher and lower refractive indices of SiN
x films were obtained by RF sputtering and RF reactive sputtering, respectively. Refractive index of SiN
x films deposited by DC reactive sputtering is controllable by changing the N
2 gas flow rate. Internal stress can be suppressed by controlling the sputtering conditions in all the sputtering methods.
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