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Volume 39, Issue 7
Displaying 1-4 of 4 articles from this issue
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Akio SUZUKI, Tatsuhiko MATSUSHITA, Naoki WADA, Yoshiaki SAKAMOTO, Masa ...1996 Volume 39 Issue 7 Pages 331-338
Published: July 20, 1996
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSThin films of ZnO : Al have been deposited on glass substrates by laser ablation using an ArF laser (λ=193nm). A minimum resistivity of 1.43×10-6 Ω·m (sheet resistance of 9.3 Ω/sq) was obtained for a film deposited at a substrate temperature of 300°C and a pressure of 1×10-5 Pa. An optical transmittance of around 88% was observed in the visible region of the spectrum for a 154-nm-thick film. In order to increase the optical transmittance, oxygen gas was introduced into the plume and onto the substrate at a rate of 1 sccm. Thus, a maximum transmittance of 95.6% was obtained in the visible region of 400700nm for the same film. A resistivity of 5.62×10-6 Ω·m (39.5 Ω/sq) was obtained for a film deposited at room temperature. An optical transmittance of around 87% was obtained in the visible region for this 142-nm-thick film. It was found from high-resolution SEM images that the surface morphologies of films grown by the laser ablation method were flatter than those of films deposited by the sputter method. The spectrum of the plume generated in the laser ablation process was compared with those of the plasma induced in the sputter process. No luminescent peaks were detected in the spectrum for the plume except for that emitted from the target element. On the other hand, many, strong peaks were detected in the spectrum for the plasma. It was deduced from this result that the surface morphology was strongly affected by the chemical properties in the deposition process.View full abstractDownload PDF (3002K) -
Yasube KASHIWABA, Yukihiro FUJIWARA, Kohji OHTA, Toshio IKEDA1996 Volume 39 Issue 7 Pages 339-345
Published: July 20, 1996
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSCadmium-tin oxide (CTO) films were deposited on glass substrates at temperatures below 140°C by RF sputtering in pure Ar atmosphere. The targets were prepared by pressing mixtures of CdO and SnO2 powder of various composi-tions. The transmittance of the films increased and their absorption edge shifted to shorter wavelengths with increasing SnO2/CdO weight ratio. The resistivity of the films was a minimum (4.2×10-6 Ωm) at a SnO2/CdO ratio of 0.3. The Haacke figure of merit of the films was 3.4×10-3 Ω-1 without heat treatment.View full abstractDownload PDF (750K) -
Kazuhisa TAKETOSHI, Fumihiko ANDOH1996 Volume 39 Issue 7 Pages 346-351
Published: July 20, 1996
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSWe developed a novel evaporator (EPC), which can be used to maintain a pressure of 10-5 Pa in a bell jar without breaking vacuum, by using a novel exchangeable source electrode with a liquid contact and a substrate exchangeable via a pre-evacuation chamber. (1) The supercooled state of the liquid alloys Ga1-xCux was used as the electrical contact material in the exchangeable source electrode. A composition (x) in the range from 0.0005 to 0.02 is appropriate for a stable liquid state in the contact. (2) The optimum practical EPC design criteria were determined by calculating the equilibrium pressure in terms of the volume ratio (M) of the bell jar to the pre-evacuation chamber, the working pressure of the bell jar and the working pressure of the pre-evacuation chamber. The optimum value of M for practical use is chosen as 181, where the volume of the pre-evacuation chamber is 1.1l and that of the bell jar is 200 l. (3) The pumping time of EPC is markedly improved to 10s. The ratio of the pumping times of the EPC system and the conventional system is then 1/1800. (4) The amount of residual water vapor in EPC is much less than that in a conventional system.View full abstractDownload PDF (1037K) -
Toshiyuki ADACHI1996 Volume 39 Issue 7 Pages 352-355
Published: July 20, 1996
Released on J-STAGE: September 29, 2009
JOURNAL FREE ACCESSDownload PDF (1201K)
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