真空
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
検索
詳細検索
OR
閲覧
検索
40 巻, 12 号
選択された号の論文の3件中1～3を表示しています
すべての抄録を表示する
    • |<
    • <
    • 1
    • >
    • >|
  • Ru (001) 表面における吸着PF3の回転運動
    垣谷 公徳, 加地 博子, 吉森 昭夫
    1997 年 40 巻 12 号 p. 898-905
    発行日: 1997/12/20
    公開日: 2009/10/20
    DOIhttps://doi.org/10.3131/jvsj.40.898
    ジャーナル フリー
    PDF形式でダウンロード (1851K)
  • O2/Ar混合ガスの1 MHz放電特性
    廣瀬 友嗣, 青柳 健二, 石川 稜威男, 斉藤 幸典, 菅ノ又 伸治
    1997 年 40 巻 12 号 p. 906-911
    発行日: 1997/12/20
    公開日: 2009/10/20
    DOIhttps://doi.org/10.3131/jvsj.40.906
    ジャーナル フリー
    抄録を表示する抄録を非表示にする
    Discharge characteristics at 1 MHz in O2/Ar mixtures at a total pressure of 66.5 Pa (0.5 Torr) have been investigated by electrical and optical methods. The electrical properties, such as the discharge-sustaining voltage and the discharge current required to sustain a dissipation power of 0.5 W, scarcely change due to the mixing ratio. However, the plasma density around the central axis decreases on mixing O2 with Ar, and the electron temperature increases. The ratio of O I 777.2 nm emission intensity just in front of the cathode to that in the negative glow region increases at small O2 mixing ratios. This appears to result from the contribution of both the metastable atoms Ar* (M) and the Ar+ ions.
    抄録全体を表示
    PDF形式でダウンロード (962K)
  • Study of Amorphous Gallium Arsenide Films Using a Novel Evaporator with Nondestructive Pickup Image and Electron Diffraction Pattern Investigations
    Kazuhisa TAKETOSHI, Hitoshi SAITO, Masuo TAKEMOTO, Fumihiko ANDOH, Yas ...
    1997 年 40 巻 12 号 p. 912-918
    発行日: 1997/12/20
    公開日: 2009/10/20
    DOIhttps://doi.org/10.3131/jvsj.40.912
    ジャーナル フリー
    抄録を表示する抄録を非表示にする
    In order to investigate the structure of amorphous gallium arsenide (a-GaAs) targets we developed a novel evaporator attached to an inspection chamber wherein an electron beam serves as both a television (TV) scanning beam and an electron diffraction beam. GaAs targets fabricated by a flash evaporation method at a substrate temperature of above 220°C consist of polycrystalline GaAs (poly-GaAs), the grain size of which is 75Å, and have an electron mobility of 125180 cm2/ Vs. GaAs targets fabricated at a substrate temperature below 200°C are amorphous. We identified two bond lengths, 2.48 Å and 4.00 Å, in radial distribution function (RDF) analyses. These values indicate the interatomic bond lengths of Ga-As and Ga-Ga or As-As, respectively. The including angle of an isosceles triangular molecule of As-Ga-As or Ga-As-Ga is 107.5°. The standard deviations of the bond lengths are 0.145 Å for the 2.48 Å peak and 0.348 Å for the 4.00 Å peak. The electron mobility of a-GaAs is 0.170.45 cm2/ Vs. The resistivities of poly-GaAs and a-GaAs targets are 102Ωcm and 107 Ωcm, respectively. Moreover, we achieved a high resolution of pick-up images on an a-Se/ a-GaAs target.
    抄録全体を表示
    PDF形式でダウンロード (1049K)
    • |<
    • <
    • 1
    • >
    • >|
feedback
 Top