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Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
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Volume 40, Issue 12
Displaying 1-3 of 3 articles from this issue
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  • Rotational Motion of PF3 Adsorbed on Ru (001) Surface
    Kiminori KAKITANI, Hiroko KAJI, Akio YOSHIMORI
    1997 Volume 40 Issue 12 Pages 898-905
    Published: December 20, 1997
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.40.898
    JOURNAL FREE ACCESS
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  • Characteristics of 1 MHz Discharge in O2/Ar Mixtures
    Yuji HIROSE, Kenji AOYAGI, Itsuo ISHIKAWA, Yukinori SAITO, Shinji SUGA ...
    1997 Volume 40 Issue 12 Pages 906-911
    Published: December 20, 1997
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.40.906
    JOURNAL FREE ACCESS
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    Discharge characteristics at 1 MHz in O2/Ar mixtures at a total pressure of 66.5 Pa (0.5 Torr) have been investigated by electrical and optical methods. The electrical properties, such as the discharge-sustaining voltage and the discharge current required to sustain a dissipation power of 0.5 W, scarcely change due to the mixing ratio. However, the plasma density around the central axis decreases on mixing O2 with Ar, and the electron temperature increases. The ratio of O I 777.2 nm emission intensity just in front of the cathode to that in the negative glow region increases at small O2 mixing ratios. This appears to result from the contribution of both the metastable atoms Ar* (M) and the Ar+ ions.
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  • Study of Amorphous Gallium Arsenide Films Using a Novel Evaporator with Nondestructive Pickup Image and Electron Diffraction Pattern Investigations
    Kazuhisa TAKETOSHI, Hitoshi SAITO, Masuo TAKEMOTO, Fumihiko ANDOH, Yas ...
    1997 Volume 40 Issue 12 Pages 912-918
    Published: December 20, 1997
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.40.912
    JOURNAL FREE ACCESS
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    In order to investigate the structure of amorphous gallium arsenide (a-GaAs) targets we developed a novel evaporator attached to an inspection chamber wherein an electron beam serves as both a television (TV) scanning beam and an electron diffraction beam. GaAs targets fabricated by a flash evaporation method at a substrate temperature of above 220°C consist of polycrystalline GaAs (poly-GaAs), the grain size of which is 75Å, and have an electron mobility of 125180 cm2/ Vs. GaAs targets fabricated at a substrate temperature below 200°C are amorphous. We identified two bond lengths, 2.48 Å and 4.00 Å, in radial distribution function (RDF) analyses. These values indicate the interatomic bond lengths of Ga-As and Ga-Ga or As-As, respectively. The including angle of an isosceles triangular molecule of As-Ga-As or Ga-As-Ga is 107.5°. The standard deviations of the bond lengths are 0.145 Å for the 2.48 Å peak and 0.348 Å for the 4.00 Å peak. The electron mobility of a-GaAs is 0.170.45 cm2/ Vs. The resistivities of poly-GaAs and a-GaAs targets are 102Ωcm and 107 Ωcm, respectively. Moreover, we achieved a high resolution of pick-up images on an a-Se/ a-GaAs target.
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