Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Search
Advanced search
OR
Browse
Search
Volume 41, Issue 7
Displaying 1-7 of 7 articles from this issue
Show all abstracts
    • |<
    • <
    • 1
    • >
    • >|
  • Operation Mechanisms on Color Plasma Displays
    Heiju UCHIIKE
    1998 Volume 41 Issue 7 Pages 595-602
    Published: July 20, 1998
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.41.595
    JOURNAL FREE ACCESS
    Download PDF (1444K)
  • Materials Research for Plasma Display Panels
    Akihiro MOCHIZUKI
    1998 Volume 41 Issue 7 Pages 603-607
    Published: July 20, 1998
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.41.603
    JOURNAL FREE ACCESS
    Download PDF (770K)
  • ITO Coated Glass Substrates for Plasma Display Panels
    Teruo FUJIWARA, Takeshi HARANOH, Hiroyuki ISHIKAWA
    1998 Volume 41 Issue 7 Pages 608-612
    Published: July 20, 1998
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.41.608
    JOURNAL FREE ACCESS
    Download PDF (793K)
  • Thermal Stability of the Interface of Fe/Fe-O Artificial Superlattices
    Masayoshi HIRAMOTO, Nozomu MATSUKAWA, Yo ICHIKAWA, Kenji IIJIMA, Hiros ...
    1998 Volume 41 Issue 7 Pages 616-621
    Published: July 20, 1998
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.41.616
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    Pulse reactive sputtering (PRS) using a metal target and reactive gas as O2 or N2 is one of the fast deposition method to prepare multilayered films composed of metallic layers and metallic compound layers which contain the elements of the reactive gases. We have investigated the formation of the layered structures of Fe/Fe-O films by using optical emission spectra from plasma in the sputtering process. We successfully prepared Fe/Fe-O multilayers with precise periodicity of nanometer level with the low activated oxygen plasma condition. Thermal stability of the layered structure and the soft magnetic properties of Fe/Fe-O films were studied by XRD and the measurements of permeability after thermal treatments at several temperatures. It was observed that the periodicity of the structure begun to destroy and the permeability was degraded at around 400°C. The layered structure of Fe/Fe-O films thought to be tougher than that of Fe/SiO2 films against the thermal treatment.
    View full abstract
    Download PDF (746K)
  • Preparation of Si Oxide Films for MIS Type Tunnel Emitter by Hollow Cathode Enhanced DC Plasma Oxidation
    Kouichi USAMI, Eitaro MIYAKE, Masataka MORIYA
    1998 Volume 41 Issue 7 Pages 622-627
    Published: July 20, 1998
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.41.622
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    A hollow cathode enhanced DC plasma oxidation system was developed. Using this system, thin Si oxide films of less than 15 nm thickness were grown on n-type Si (100) substrates for the application as barrier insulator of tunnel emitter. The oxide film thickness and the film quality were estimated by the elipsometery and the XPS energy peak shift of Si 2p core level, respectively.
    On the oxide film, thin Au electrode was deposited and MIS (Metal-Insulator-Semiconductor) diode type tunnel emitter was fabricated. The electrical properties of the diode, such as I-V characteristics and junction resistance were measured for various oxidation conditions.
    The electron emission current in vacuum from the tunnel emitter having 0.2 mm2 emission area was measured. For a typical sample, with diode voltage of 13 V, the measured current density is of the order of 10 μA/mm2.
    View full abstract
    Download PDF (810K)
  • Development of A Wafer Transportation Apparatus for Ultra-High Vacuums
    Seiichiro KANNO, Hiroyuki KITSUNAI, Nobuo TSUMAKI
    1998 Volume 41 Issue 7 Pages 628-632
    Published: July 20, 1998
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.41.628
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    A wafer transportation apparatus with an advanced rotary magnetic coupling system for ultra-high vacuums has been developed. In this magnetic coupling system, the gap between the magnets and the yokes can be reduced to less than 1 mm, which enables a much larger coupling force than that of conventional systems.
    The apparatus has been evaluated. After a series of experiments, we found the following :
    1) The rotational stiffness is more than 4.3 Nm/deg and the maximum rotational torque is more than 7.6 Nm.
    2) The positioning accuracy (±3δ) is ±0.048 deg in the circumferential direction and ±0.04 mm in extension and retraction.
    3) The outgassing rate from the wafer transportation apparatus is 6×10-8 Pam3/s after baking (120°C, 48 hr.).
    View full abstract
    Download PDF (779K)
  • High Speed Deposition of Diamond-like Carbon Film
    Yuichi SAKAMOTO, Hironori SAITO, Shigekazu TADA, Masahisa OIKAWA, Tuyo ...
    1998 Volume 41 Issue 7 Pages 633-636
    Published: July 20, 1998
    Released on J-STAGE: October 20, 2009
    DOIhttps://doi.org/10.3131/jvsj.41.633
    JOURNAL FREE ACCESS
    Show abstractHide abstract
    A diamond-like carbon film is deposited on a 10 cm diameter silicon substrate with a deposition rate of about 100 Å/s, by using a microwave discharge plasma in an admixture of C2H4 and H2 gases. The film has the hardness between 15 and 25 GPa, the hydrogen content of about 10% and the Id/Ig of 0.68.
    View full abstract
    Download PDF (396K)
    • |<
    • <
    • 1
    • >
    • >|
feedback
 Top