We report the effect of N
2 partial pressure on the structure of MgO thin film deposited on Si (100) substrates by rfmagnetron sputtering using single-crystal target and sintered target in Ar+ N
2 mixture. The films were evaluated using X-ray deffractmeter (XRD). We examined the change of (200)
MgO reflection depending upon the change of background pressure and N
2 flowrate when single-crystal target and sintered target were used. From the result, it was shown that in the case of using single-crystal target and sintered target, the crystallinity suddenly improves when background pressure reaches its threshold. However, in the case of sintered target, we found out that an increase in N
2 flowrate does not affect the threshold background pressure (P
TH) so much in comparison with single-crystal target. This is due to the large amount of H
2O residual gas in sintered target as compared to single-crystal target.
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