Pb (Zr
0.52Ti
0.48) O
3 films up to 1.5 μm thickness have been prepared by multi-step process to suppress the problem of crack formation due to the thermal stress. The thickness dependence of film structure, ferroelectric, dielectric properties have been investigated over the thickness range of 0.24-1.5 μm. A strong (111) orientation was obtained from all films deposited in the experiments. For a constant applied field of 170kV/cm, remanent polarization, 2
Pr developed from 14μC/cm
2 to 30μC/cm
2, as film thickness increased from 0.24 to 1.5 μm. Dielectric constant also increased with film thickness, and reached the maximum value of 1200 at 1.5 μm. These trends are interpreted in terms of the influence of interfacial effect on the electrical characteristics.
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