Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 44, Issue 6
Displaying 1-9 of 9 articles from this issue
  • Dharam Pal Gosain
    2001 Volume 44 Issue 6 Pages 567-571
    Published: June 20, 2001
    Released on J-STAGE: October 20, 2009
    JOURNAL FREE ACCESS
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  • Koichi YOSHINO, Yoshikazu SAKUMA, Hiroyuki UEYAMA, Hajime SHIRAI
    2001 Volume 44 Issue 6 Pages 572-577
    Published: June 20, 2001
    Released on J-STAGE: October 20, 2009
    JOURNAL FREE ACCESS
    The high-density and low-temperature microwave plasma (2.45 GHz) utilizing a spoke antenna was applied for fast deposition of hydrogenated microcrystalline silicon (μc-Si : H) film. Highly crystallized and photoconductive, μc-Si : H film was fabricated under the plasma condition that the electron density ne show the maximum together with the minimum of the “hot electron population”. The precise control of the ion beam energy impinging to the growing surface was very effective for the promotion of the film crystallinity. High rate deposition of μc-Si : Hfilm was also achieved at 47 Å/s from the 30 sccm SiH4 plasma. This high-density microwave plasma has a high potential not only for etching but also for the large-area thin film deposition processes such as solar cell and thin film transistors (TFTs).
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  • Yasuyoshi MISHIMA
    2001 Volume 44 Issue 6 Pages 578-582
    Published: June 20, 2001
    Released on J-STAGE: October 20, 2009
    JOURNAL FREE ACCESS
    Using in ultrahigh-vacuum (UHV) system, we could form polycrystalline silicon films. Polycrystalline silicon (poly-Si) films are formed on glass at substrate temperature below 550°C. We used two methods of crystallization. One is asdeposited polycrystalline Si by an UHV sputtering method and the other is solid-phase crystallization (SPC) of silicon film in UHV conditions. As-deposited poly-Si is oriented to (220) and SPC poly-Si is oriented to (111). The crystallinity is improved by increasing film thickness in as-deposited poly-Si film. Ar atoms, which are used for sputtering, disturb the crystallization. Ar concentration in SPC poly-Si is influenced by annealing pressure and surface conditions of Si film. Oxide layer on Si film disturbs SPC. The field effect mobility, 18 cm2/Vs, was obtained by a SPC poly-Si TFT.
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  • Hitoshi SAITO, Kazuhisa TAKETOSHI, Kaoru KOZU
    2001 Volume 44 Issue 6 Pages 583-587
    Published: June 20, 2001
    Released on J-STAGE: October 20, 2009
    JOURNAL FREE ACCESS
    We studied the photoinduced ring-to-chain structural change of amorphous selenium (a-Se) evaporated at room temperature with in situ observation by highly sensitive electron diffraction and Reverse Monte Carlo (RMC) simulation. Although the structure before irradiation (SBI) is a random chain structure containing random rings (RCSR) (30% atoms in relevant number of 1013 network atoms), the structure after irradiation (SAI) is a random chain structure. These are obtained with the RMC simulation of the difference in structure factors from RCSR. The average bond angles for SBI and SAI are 105.1°and 104.3°, respectively. The average dihedral bond angles for SBI and SAI are 101.7°and 100.7°, respectively. Rings that form the initially closed loops in SBI are broken by photoirradiation. Bonds of random rings in SAI are not closed, and change to the random chain structure. These results are similar to those of Roy et al. (Phil. Mag. B, 78, 1, 1998, 87-94.) obtained by extended X-ray absorption fine structure spectroscopy (EXAFS).
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  • Tadashi ISHIDA, Hironori KOBAYASHI, Shoichi MOCHIZUKI, Osamu TABATA
    2001 Volume 44 Issue 6 Pages 588-591
    Published: June 20, 2001
    Released on J-STAGE: October 20, 2009
    JOURNAL FREE ACCESS
    The resistivities of the ITO films on glass at 200°C prepared by RF magnetron sputtering of a 97% density target, under the total pressure 9.5 × 10-1Pa or 1.9 Pa of Ar containing 0.0150.05% O2 partial pressure ratio, were around 2.0 × 10-4Ω·cm. The deposition rate per unit power of RF was too lower than that of DC under the total pressure 1.9 Pa. The self bias voltages of the target in RF sputtering were measured, and a method of controling self bias voltages is proposed to lower the resistivity.
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  • Effect of exposure to the atmosphere after baking in the atmosphere
    Hiroshi SHINBORI, Sadao DEYAMA, Masao HASHIBA, Yuko HIROHATA, Tomoaki ...
    2001 Volume 44 Issue 6 Pages 592-597
    Published: June 20, 2001
    Released on J-STAGE: October 20, 2009
    JOURNAL FREE ACCESS
    For inner coating graphite baked in the atmosphere, gas desorption properties after exposure to the atmosphere were investigiated by using a thermal desorption spectroscopy. The temperature and the water vapor pressure during the exposure were varied from 25 to 50°C, and from 950 Pa to 6150 Pa, respectively. In the heating up to 410°C, the major gas species desorbed were CO2 and H2O. In the thermal desorption spectra of CO2and H2O, a desorption peak was observed at around 130°C. The peak intensities decreased with increases of both the exposure temperature and the water vapor pressure. When the water vapor pressure increased, the desorption amount of H2O increased, although that of CO2 decreased. The total desorption amount was almost the same even when the water vapor pressure was changed. In order to lengthen a life time of a cathode ray tube, it is necessary to reduce the water vapor pressure in the atmosphere environment, since the cathode is damaged by mainly the water.
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  • Kenya AKAISHI
    2001 Volume 44 Issue 6 Pages 598-600
    Published: June 20, 2001
    Released on J-STAGE: October 20, 2009
    JOURNAL FREE ACCESS
    When the ouutgassing rate of an unbaked vacuum chamber is measured by the pressure rise and the throughput methods, the difference between two outgassing rates is often observed. Why the different outgassing rates are measured by the two methods is discussed by referring the theoretical pumpdown model and the experimental results. It is shown that the disagreement between the measured outgassing rates may be caused by the dependence of water outgassing rate on pumping speed because of the reversible adsorption of water.
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  • Yuko HIROHATA, Dai MOTOJIMA, Tomoaki HINO
    2001 Volume 44 Issue 6 Pages 601-604
    Published: June 20, 2001
    Released on J-STAGE: October 20, 2009
    JOURNAL FREE ACCESS
    Dependence of electron energy on electron stimulated desorption (ESD) yield of deuterium was investigated for various plasma facing materials. Signal intensities of D2 and HD were detected at higher electron energy than 400 eV and 200 eV, respectively. A maximum of ESD yield was observed at around 800 eV. The maximum yields of HD and D2 were approximately 0.03 HD/electron and 0.02 D2/electron for a ferritic steel (F82H). Desorption of atomic hydrogen due to ESD was also detected. The dependence of electron energy on the ESD yield was almost the same in all material.
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  • Nobuo SAITO, Isamu NAKAAKI, Sigeaki NAKAMURA, Hiromu IWATA, Shoji YOSH ...
    2001 Volume 44 Issue 6 Pages 605-608
    Published: June 20, 2001
    Released on J-STAGE: October 20, 2009
    JOURNAL FREE ACCESS
    Amorphous SiC : O : H films have been deposited by a reactive rf magnetron sputtering of Si target in Ar-CH4 and CO2 gas mixtures. The effect of CO2 partial pressure ratio Ron the electrical and optical properties of the films was investigated. With increasing R, the optical bandgap increases, the dark conductivity decreases, whereas the pho-toconductivity shows a maximum at R= 10%. These data may relate to the change of bonding configuration in ir spectra.
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