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松本 紘, 篠原 真毅
2003 年 46 巻 3 号 p.
135-141
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
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滝川 浩史
2003 年 46 巻 3 号 p.
142-147
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
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尾形 敦
2003 年 46 巻 3 号 p.
148-153
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
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丹澤 貞光, 廣木 成治, 阿部 哲也
2003 年 46 巻 3 号 p.
154-157
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Following the experiments on H2/He separation which was reported in the 41st meeting, the experiments on D
2/He separation has been performed by using the new method named Continuous Circulation Chromatograph method (C
3 method). The D
2/He mixed gas were separated into each gas component as well as the H2/He mixed gas with a molecular-sieve as the adsorbent material and Ar as the carrier gas. From the experimental results of both H
2/He mixed gas and D2/He mixed gas, it was confirmed that the same result would be obtained on the T
2/He mixed gas and the C
3 method could be applicable for use in a fuel cycle of the fusion reactor. In addition, the experiments on H
2/D
2 separation has been attempted. The results showed that the H
2/D
2 mixed gas could be separated into H
2 and D
2 with the carrier gas of a small mass such as He.
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KEKBリングでの測定
末次 祐介, 谷本 育律, 堀 洋一郎, 金澤 健一, 小林 正典
2003 年 46 巻 3 号 p.
158-161
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
One of the latest problems in positron or proton accelerators is a single-beam instability due to an electron cloud around the beam. The seed of the electron cloud is the electrons emitted from the surface of beam chamber, which consist of electrons due to the synchrotron radiation (photoelectrons) and sometimes those multiplied by the multipactoring. Here a rough surface with a saw-tooth structure (saw-tooth surface) is proposed to reduce the electron emission from the surface of beam chamber. A new rolling-tap method is developed for this study to make the saw-tooth surface in a circular beam chamber with a length of several meters. The first experiment using a short test chamber at a photon beam line of the KEK Photon Factory verifies its validity, that is, the photoelectron emission from the saw-tooth surface reduces by one order of magnitude compared to the usual smooth surface. In the second experiment under a bunched positron beam in the KEK B-Factory, however, the electron emission is comparable to that of smooth surface and the behaviour is quite different from the previous one. The reason is that the successive bunched beam excites the multipactoring of electrons and the decrease of the photoelectron emission by the saw-tooth surface is wiped out. The saw-tooth surface will be effective to reduce the electron emission under the situation with external magnetic fields or without strong beam fields where the electron multipactoring hardly occurs.
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柴田 秀幸, 安 東秀, 吉村 雅満, 上田 一之
2003 年 46 巻 3 号 p.
162-165
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
The c (4×4) super-lattice structure of Sn/Si (001) system has been studied using scanning tunneling microscopy (STM) and coaxial impact collision ion scattering spectroscopy (CAICISS). After heating at 1200°C, the clean Si (001) 2×1 surface is confirmed by using low-energy electron diffraction (LEED) and STM. After Sn deposition of 0.5 monolayer (ML), successively annealed it at 600°C, a c (4×4) super-lattice structure is formed. We obtain three kinds of protrusions in high-resolution STM images of Si (001) c (4×4) -Sn structure. One of them is very similar to that of recently reported c (4×4) -Si reconstruction. Others are new protrusions in c (4×4) -Sn, so it seems that these are ascribed to Sn dimer. We analyzed CAICISS spectra scattered from Sn atoms, compared with simulated results. As a result, Sn dimer is found to be buckled. Thus, we proposed the mixed ad-dimer model for c (4×4) -Sn structure.
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橋本 理史, 松本 智和, 井上 直久
2003 年 46 巻 3 号 p.
166-169
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
We have improved the measurement accuracy of nitrogen concentration in Czochralski (CZ) silicon crystal by infrared absorption spectroscopy and extended the adaptation for samples. The elimination method of interfering absorption for nitrogen peaks is established. On the other hand, we enable to measure the low resistivity samples that are used widely for manufacturing devices. The measurement accuracy is evaluated by comparing the results with SIMS results and those of FZ samples.
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船尾 大輔, 大久保 一平, 井上 直久, 松尾 有里子, 纐纈 明伯
2003 年 46 巻 3 号 p.
170-173
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Nitrogen doping has attracted much attention because it reduces secondary defects. It is important for clarification of this reduction mechanism and for nitrogen concentration measurement to reveal the nitrogen configurations and the origin of infrared absorption bands. In this paper, the atomic-level behavior of nitrogen is revealed by using molecular orbital method and valence force method.
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Tomoaki HINO, Yuji YAMAUCHI, Junji ONO, Yuko HIROHATA
2003 年 46 巻 3 号 p.
174-176
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
For nitrogen-helium mixture plasma, intensities of reactive species such as nitrogen molecular ion and excited nitrogen molecular were measured by changing the mixing ratio of helium to nitrogen in an electron cyclotron resonance plasma. When the discharge gas pressure was kept constant, the intensity of reactive species had a maximum to the mixing ratio. Silicon wafer was exposed to the nitrogen-helium mixture plasma with different mixing ratio of helium to nitrogen. The degree of the nitridation corresponded to the intensity of the reactive species. For an enhancement of nitridation, it is useful to change the mixing ratio of helium to nitrogen.
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信原 邦啓, 笠井 秀明, 中西 寛, Wilson Agerico DIÑO
2003 年 46 巻 3 号 p.
177-180
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Hydrogen absorption into the Pd (111) surface and desorption from the subsurface to the Pd (111) surface are investigated. In particular, the role of hydrogen-induced relaxation of the Pd lattice in absorption and desorption processes are studied. We performed the quantum dynamics calculations of H/Pd (111) absorption and desorption probabilities that include the surface atoms' motion using the time-independent coupled-channel method. Based on the calculation results for both the hydrogen absorption and desorption probabilities, we find that the hydrogen motion and the surface lattice relaxation are dynamically coupled. Depending on the hydrogen translational energy, the surface lattice motion either promotes or hinders the penetration of hydrogen into (desorption from) the surface (subsurface). Furthermore, the surface temperature dependence of hydrogen desorption dynamics is investigated. Based on the calculation results, we find that the hydrogen desorption is promoted by an increase in the surface temperature.
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坂上 護, 宗像 利明, 笠井 秀明, 興地 斐男
2003 年 46 巻 3 号 p.
181-184
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Microscopic mechanisms of energy relaxation and dephasing in two-photon photoemission (2PPE) from metal surfaces are investigated by nonequilibrium Green function method. It is shown that the dephasing time corresponds to the lifetime of a hole excited in an occupied state by a pump photon. The hole lifetime also affects the energy relaxation time which is usually considered to be the intrinsic electron lifetime of an unoccupied state. The density matrix method can reproduce the results by the Green function method well, however, fails to estimate the effects of the hole scattering properly. Based on the obtained results, a new physical interpretation of the energy relaxation time and the dephasing time of metals is proposed.
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村上 義夫, 湯山 純平
2003 年 46 巻 3 号 p.
185-188
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
A new oil-free vacuum pump has been developing to substitute for the conventional oil-sealed rotary vacuum pumps. The pump is a four-stage positive displacement pump whose pumping unit consists of a special bellows, an inlet valve and an outlet valve. The shape of the bellows is based on a unique polyhedron consisting of twelve faces. Some valve plates are driven simultaneously from the outside using magnetic couplings. The use of the new bellows and the driven valves enables the pump to increase pumping speed and to lower ultimate pressure.
The target values of the pumping speed, ultimate pressure and operational lifetime of the pump are determined to be 3 L/s, 1 Pa and 2 years, while the highest pumping speed and the lowest pressure achieved by an experimental pump are about 2.2 L/s and 20 Pa, respectively. The high ultimate pressure of the pump is mainly due to a relatively large “dead volume” when the bellows is folded. The experimental pump has been used for about 500 hours in total under various operating conditions so far.
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ガス種による到達圧力の違い
鎌田 信, 澤田 雅, 杉山 渉, 矢吹 益久, 藤岡 学, 土屋 勝
2003 年 46 巻 3 号 p.
189-192
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
In order to examine the pumping performance of the scroll pump for various gases, the following two experiments were performed : (1) Measurement of the ultimate pressure for Argon, Nitrogen and Helium; (2) Separation of the direct effect of orbiting speed on the ultimate pressure from the effect of clearance change with temperature change accompanying a variation in orbiting speed. For these experiments, the apparatus was improved as follows : (1) The pump was strengthened with double seals to prevent leakage from the atmosphere; (2) A dry ice trap was put between the vacuum chamber and the vacuum gauge for the purpose of removing the water vapor; (3) A tank connected to the discharge mouth is filled with test gas, whose pressure is a little higher than the atmosphere, in order to avoid other-gas contamination. The results were compared with the theoretical predictions, and the validity of the theory was confirmed to a certain extent.
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内山 隆司, 谷本 育律, 堀 洋一郎
2003 年 46 巻 3 号 p.
193-196
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
The vacuum system of the PF-AR was improved for the upgrading of the ring as a synchrotron light source. All of beam chamber, vacuum device and control system were almost renewed. An existing lattice and magnets themselves are not changed. The new vacuum system has been designed and constructed in order to achieve the vacuum condition necessary for required beam lifetime and to enable increase the storage current. Titanium sublimation pumps and ion pumps of the considerable amount are equipped as main pumps in order to reinforce the pumping speed, and the copper is adopted as a main material of the chamber in order to cope with the thermal load and the radiation leakage. The system satisfactory started, and designed performance is successfully being achieved.
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西澤 伸一, 平田 正紘
2003 年 46 巻 3 号 p.
197-199
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
The Capacitance diaphragm gauge is one of the most important vacuum gauges in low and middle vacuum ranges. The difference of temperature between the sensor head and the vacuum chamber gives a non-linear sensitivity of the gauge due to thermal transpiration effect. This sensitivity depends not only on pressure but also gas species. It is supposed that under the same condition of gas-surface interaction, the sensitivity should be normalized by mean free path independently of gas species. However, the sensitivity normalized by mean free path also depends on gas species. In this study, by using DSMC method, the influence of gas-surface interaction on thermal transpiration was analyzed. In case of random reflection model, the sensitivity has non-linearity and depends on mean free path. On the other hand, in case of a perfectly elastic reflection model, the sensitivity is constant regardless mean free path. In case of complex reflection that is composed of random and elastic reflections, as increasing the elastic reflection component, the sensitivity decreases from that of random reflection to elastic reflection.
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矢城 陽一朗, 垣谷 公徳, 加地 博子, 吉森 昭夫
2003 年 46 巻 3 号 p.
200-202
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
It is well known that Ge (100) surface shows reconstructed structure like Si (100) surface. This surface formed structure which has asymmetric dimers in the topmost layer at low temperature, and the order-disorder phase transition occurs at 200 K, the structure change to structure. For Ge (100) surface X-ray diffraction measurements and the structure analysis are performed by R. Rossmann, et al. However, they use the isotropic Debye-Waller factor.
In actuality, Ge dimers makes flip-flop motion at particular direction. We try to perform the structure analysis of Ge (100) surface using the results of the first-principles calculation and the anisotropic Debye-Waller factor. Obtained results show improvement compared with previous analysis.
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片野 諭, 加藤 浩之, 川合 真紀, 堂免 一成
2003 年 46 巻 3 号 p.
203-206
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Partial hydrogenation of 1, 3-butadiene (C
4H
6) to butene (C
4H
8) on hydrogen precovered Pd (110) has been investigated using temperature-programmed desorption (TPD), scanning tunneling microscopy (STM) and high resolution electron energy loss spectroscopy (HREELS). Below room temperature, C
4H
6 was molecularly chemisorbed on a hydrogen precovered Pd (110) surface, and was in π-bonded chemisorption states. The hydrogenation of C
4H
6 did not occur in the sparse domains less than 0.25 ML (c (4×2)). With increasing the C
4H
6 coverage, C
4H
6formed dense domains and the π-bond was weakened. Only the weakly π-bonded C
4H
6was hydrogenated to C
4H
8 at about 200 K. We propose that c (4×2) structure of 1, 3-butadiene acts as the template for the activation of hydrogenation.
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田中 博美, 永島 法, 岸田 悟, 吉川 英樹, 木村 昌弘, 田中 彰博, 福島 整
2003 年 46 巻 3 号 p.
207-209
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
We carried out surface cleaning of Bi
2Sr
2CaCu
2Oy (Bi-2212) single crystals grown by a modified vertical Bridgman method (modified VB method), and investigated the chemical state with X-ray photoelectron spectroscopy. From the results, we found that carbon impurities on the surface of the single crystals can be removed almost completely by cleaving them under high vacuum (7.3 × 10
-6 Pa). The O-1s peak from the cleaved surface of the single crystal was very sharp and its FWHM value was about 2.0 eV. Moreover, we found that the crystals do not include any carbon impurities, and that they have few mutual substitutions between Ca and Sr. Therefore, the single crystals grown by a modified VB method is found to have high quality.
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三浦 崇, 榎戸 一樹, 廣川 紀子, 荒川 一郎
2003 年 46 巻 3 号 p.
210-213
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Luminescent phenomena during sliding friction between a diamond micro sphere and a flat quartz single-crystal disk under controlled ambient gas pressure of N
2, Ar, and Kr were investigated. Spectra of the luminescence clearly indicated the gas discharge of each gas around the frictional contact. Spatial distributions of the gas-discharge luminescence were measured. The distributions at different sliding speeds were almost identical. The distributions depend strongly on the gas species and the pressure; the area of the discharge becomes larger with decrease of the gas pressure.
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島田 幸一, 小池 勝彦, 福田 伸
2003 年 46 巻 3 号 p.
214-217
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
We investigated optical and electrical properties and durability in salt water of multilayer transparent conductive films with Ag-Nd alloy. By DC magnetron sputtering, we prepared three layer transparent conductive film with a structure of ITO/Ag-Nd alloy/ITO/substrate. As Ag-Nd alloy, we tried Ag-0.48 wt%Nd-0.60 wt%Au alloy and Ag-0.41 wt% Nd-0.56 wt%Cu alloy. We measured transmittance and sheet resistance of these transparent conductive films before and after dipping test in salt water. We found that before the dipping test, sheet resistance of the transparent conductive multilayer films with Ag-Nd alloy was almost the same as that with pure Ag. After the immersion of these transparent conductive films into salt water, we found that the durability of the transparent conductive film with Ag-Nd-Au alloy was superior to those with pure Ag and Ag-Nd-Cu alloy.
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坂東 佑治, 太田 領, 相沢 亮文, 松田 七美男
2003 年 46 巻 3 号 p.
218-221
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Amorphous transparent conductive electrode films prepared by RF magnetron sputterng using H
2O
2 addition gas which introduced to the chamber as a vapour. The films were deposited for changing addition partial gas pressure of H
2O
2. As a result, These films had fine electrical properties similar to the films prepared with H
2O, and more, stable for time passage. We also investigated wet etching properties. In spite of changing addition partial gas pressure, it has constant wet etching rate. We observed not only films surface with AFM (JSPM-4200, JEOL), but also structure with XRD (RINT1400, Rigaku). The flatness was so improved, the average of roughness Ra was 0.378 nm at 11 × 10
-3 Pa of H
2O
2 addition partial gas pressure. Still more, there were no change of electrical and optical properties for anneal (200 °C-1 h hold in vaccum).
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吉嵜 聡, 寺地 徳之, 伊藤 利道
2003 年 46 巻 3 号 p.
222-224
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
In this study, we have measured photocurrents and time-resolved photoluminescence spectra of high-quality CVD diamond UV detectors using a short pulse UV laser (wavelength : 220 nm). Photo-excited carrier transport properties measured for CVD diamond films under electric field (
E) demonstrate that the photocurrent peak intensity at the shortest period after the pulse excitation proportionally increased with increasing E in the range of
E below ≈1 × 10
3 V/cm while it was proportional to
E1/2 in the range of
E above ≈ 1 × 10
3 V/cm. This well corresponds to changes of carrier drift speeds theoretically obtained for sufficiently high quality diamond. On the other hand, the photocurrent intensity integrated in a constant time period (below 360 ns) is almost proportional to E in the whole E regions measured (to 1× 10
4 V/cm). On the contrary, photoluminescence (PL) intensity only slowly decreased with increasing
E while the PL decay constants were independent of
E. Furthermore, the non-radiative relaxation processes of photo-excited carriers were almost independent of
E in the examined field region.
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濱田 充弘, 寺地 徳之, 伊藤 利道
2003 年 46 巻 3 号 p.
225-228
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Laterally microstructured devices adequate for applying high electric fields above 10
6 V/cm have been fabricated on homoepitaxially grown chemical vapor deposited diamond thin layers by a focused ion beam (FIB) with 30-keV Ga ions. Characteristic regions of the fabricated microstructure were found to change clearly after an application of a high electric field above 1 × 10
6 V /cm to parallel electrode planes. An energy-dispersive X-ray analysis confirmed that substantial Ga accumulations occurred mainly in the positively biased region to which Ga ions were implanted to form graphitized layers. This phenomenon clearly verifies that residual Ga atoms can easily diffuse in the graphitized layer under the presence of hot electrons created in such high electric fields. The present FIB fabrication process combined with a newly developed Ga removing process demonstrates the possibility for realization of high-electric-field-compatible diamond devices to a submicron accuracy.
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千民 承, 寺地 徳之, 伊藤 利道
2003 年 46 巻 3 号 p.
229-232
発行日: 2003/03/20
公開日: 2010/01/30
ジャーナル
フリー
We have investigated the interface formation between hydrogen or oxygen terminated homoepitaxial (100) CVD diamond film and N, N'-diphenyl-N, N'-bis (1-naphthyl) -1, 1'biphenyl-4, 4'diamine (α-NPD) using an atomic force microscope (AFM), x-ray photoelectron spectroscopy (XPS) and photoluminescence measurements. Deposited α-NPD was found to form islands at the very initial stage, and subsequently to develop into a continuous film. In the case of H-terminated diamond substrates, XPS peak positions of both C1s and N1s spectra shifted to their lower binding energy sides. Both possibilities of CVD diamond as a hole transport layer and a transparent anode electrode for α-NPD were suggested. In the case of O-terminated diamond substrates, no thickness-dependent peak shift was observed while the α-NPD C1s was located at 1.7-eV higher binding energy, compared to the diamond C 1 s. The possible origins of the interfacial interaction such as electron and hole injections are discussed in relation to band bending effect, changes in the surface dipole layer and change in energy levels of α-NPD after the interface formation. Photoluminescence spectra taken from the deposited α-NPD showed a broad emission peak at 435 nm while the excitation spectra demonstrated the maximum at 350 nm, suggesting a possibility of the deposited α-NPD as a luminous material.
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鈴木 晶雄, 池田 和巧, 青木 孝憲, 松下 辰彦, 奥田 昌宏
2003 年 46 巻 3 号 p.
233-236
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
β-FeSi
2 thin films were deposited on Si (001) substrate by a pulsed laser deposition using an ArF excimer laser. From XRD peaks of the as-deposited films, peaks of β-FeSi
2 (400), (600) and (800) were identified. At this time, it was found from FE-SEM observation that there was aggregation on the film surface. In order to overcome these problems, an annealing process using an ArF excimer laser was carried out. From XRD peaks of the annealed films, intensified peaks of β-FeSi
2 (400), (600) and (800) were identified, and improvement of crystallinity was recognized. It was found from FE-SEM observation that the surface of film was smooth.
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鈴木 晶雄, 奥島 浩久, 安井 光弘, 青木 孝憲, 松下 辰彦, 奥田 昌宏
2003 年 46 巻 3 号 p.
237-240
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Iron disilicide (β-FeSi
2) thin films were deposited on Si (100) substrate by a pulsed laser deposition using SHG of a Nd : YAG laser. The film crystallizations were varied by annealing time of β-FeSi
2 films irradiated by Nd : YAG laser. From XRD spectra of these films, peaks of β-FeSi
2 (400) and (800) were identified. It was found from FE-SEM observations that surfaces of the β-FeSi
2 films annealed for 8 h were flatter than that of the as-deposited β-FeSi
2 films.
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原田 昌浩, 河合 克浩, 田中 武, 川畑 敬志, 梶岡 秀
2003 年 46 巻 3 号 p.
241-244
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Iron thin films were prepared by using an r. f. magnetron sputtering technique with multipolar magnetic plasma confinement, which is efficient for preparation of ferromagnetic thin films at a low gas pressure (1.1 Pa8 × 10
-2 Pa). It is shown that lowering the sputtering gas pressure down to 8 × 10
-2 Pa results in a significant decrease in the resistivity close to the bulk value of Fe. The intensity ratio of [FeO
x] / ([Fe] + [FeO
x]) obtained from X-ray photoelectron spectroscopy spectra decreased with the lowering of the sputtering gas pressure. Also, the oxygen content in the film deposited at a low gas pressure of 8 × 10
-2 Pa is reduced to below the detection limit of XPS. It is demonstrated that the intensity of Fe (110) peak using XRD increases as the sputtering gas pressure decreases.
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宮本 嗣久, 大西 学, 熊渕 善太, 山縣 悠, 川畑 敬志, 梶岡 秀
2003 年 46 巻 3 号 p.
245-248
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Energy distribution of
40Ar
+ ions and
63Cu
+ ions incident to the substrate surface in rf-dc coupled magnetron sputtering with which an rf source and a dc power were simultaneously applied to a copper target in order to control the incident ion energy on the target were measured by an energy-resolved mass spectrometer. The target power (rf+ dc) was varied from 2.0 to 5.0 kW at an Ar gas pressure of 1.0 Pa. The mean energy of
40Ar
+ ions and
63Cu
+ ions shifted from about 11.0 to 3.0 eV with the increase of the ratio of dc power to rf power. The number of
63Cu
+ ions significantly increased with the increase of the target power, whose value was about 500 times the number of
40Ar
+ ions at the target power of 5.0 kW.
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林 裕之, 古賀 瑞帆, 頭島 淳, 高橋 一正, 林 康明, 西野 茂弘
2003 年 46 巻 3 号 p.
249-252
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Large-area synthesis of well-aligned carbon nanotubes (CNTs) by surface-wave-excited microwave-plasma chemical vapor deposition (CVD) using slot antennas has been developed. By a one-slot antenna system, aligned CNTs were successfully synthesized on a 3 × 3 cm
2 substrate. In order to synthesize on a larger-area substrate, we generated large-area surface-wave-plasma by a two-slot antenna system and synthesized CNTs on substrates set at the center and around the edge of a 7.5 × 7.5 cm
2 substrate holder. Grown CNTs were aligned and uniform in diameter and density. Surface-wave excited microwave-plasma CVD has a potential for large-area synthesis of well-aligned carbon nanotubes.
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大石 哲雄, 小西 陽子, 後藤 真宏, 笠原 章, 土佐 正弘, 吉原 一紘
2003 年 46 巻 3 号 p.
253-256
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
In order to improve the pressure stability, h-BN/Cu complex film was coated by magnetron co-sputtering deposition inside a vacuum chamber in the shape of a cylinder, and the pressure stability in this chamber was measured by a buildup method. The pressure in the h-BN/Cu coated vacuum chamber increased from 1.0 × 10
-8 Pa to 1.6 × 10
-5 Pa through 24 hours. This pressure was two orders lower than that of non-coated vacuum chamber with the same shape as the h-BN/Cu coated vacuum chamber. The outgassing rate calculated from the slope of the pressure increase curve was about 5 × 10
-12 Pa·m·s
-1, which explains that this h-BN/Cu coating is effective to an improvement of the pressure stability in a vacuum chamber.
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立花 隆行, 山内 祐子, 長崎 仁志, 田澤 俊彦, 三浦 崇, 平山 孝人, 桜井 誠, 荒川 一郎
2003 年 46 巻 3 号 p.
257-260
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
We have studied electron stimulated desorption (ESD) and photon stimulated desorption (PSD) of positive ions from water absorbed on a surface of solid rare gases. In TOF spectrum, a series of ionized clusters are observed, which were thought to be protonated water clusters, (H
2O)
nH
+. In both PSD experiments of H
2O/Ar, the desorption threshold of (H
2O)
nH
+ was found to be coincide to 2p core ionization of Ar.
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田村 繁治, 安本 正人, 上條 長生, 鈴木 芳生, 淡路 晃弘, 竹内 晃久, 高野 秀和, 上杉 健太朗
2003 年 46 巻 3 号 p.
261-264
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Concentric multilayers of alternate high-Z material and low-Z one, deposited on the wire substrate, can be applied to various optical elements for synchrotron radiation (SR) high-brilliance X-ray beamlines. We present new application of the concentric multilayer to optical elements for the SR high-brilliance X-ray beamlines at SPring-8. Three types of Cu/ Al concentric multilayer samples have been fabricated and applied to (1) a spatial resolution test pattern for X-ray computed tomography (CT), (2) a spatial resolution test pattern for the X-ray equipment and (3) a condenser device in the X-ray imaging microscopy. These characteristics have been tested. For the (1), alternate opaque and transparent concentric ring pattern with 2 micron film thickness has been clearly resolved. For the (2), the test pattern can work well in the high energy X-ray region. For the (3), absorption contrast image of a test pattern without modulation by the coherence of the source has been obtained by using the condenser device.
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小椋 満, 松本 浩介, 葛原 宏治, 岸田 悟, 吉川 英樹, 福島 整
2003 年 46 巻 3 号 p.
265-268
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
We prepared Bi
2Sr
2Ca
n-1Cu
nO
y (Bi-based) superconducting thin films by rf magnetron sputtering with the targets of Bi : Sr : Cu = 4.3 : 1.8 : 0.6 and Ca : Cu : O = 2 : 1, where sputtering gas of He and O
2, and an off-axis geometry were used. From the result, we found that Bi
2Sr
2CuO
y and Bi
2Sr
2CaCu
2O
y films were able to be prepared by changing Ca-Cu-O content which we are controlled by the rf power of Ca-Cu-O target. Therefore, the Bi-based films with n≥ 3 are thought to be obtained by this method.
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岡野 寛, 岡田 光孝, 宮脇 巧磨, 中村 茂昭, 長谷川 弘治
2003 年 46 巻 3 号 p.
269-271
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Potassium niobate (KNbO
3) thin films are promising materials for the surface acoustic wave devices (SAW). It is found from computed results that the layered structure, c-axis oriented KNbO
3 thin film on SiO
2/ (100) Si, will exhibit high phase velocity (4013 m/s) of SAW with high coupling coefficient (1%). The KNbO
3 thin films were deposited on the SiO
2/ (100) Si substrate by the electron beam evaporation system. It is important to have stoichiometric KNbO
3 thin films. Relations between the composition of evaporation sources and quality of the thin films were examined. Without substrate heating, KNbO
3 thin films with stoichiometry have been obtained at the K/Nb ratio for evaporation source of 0.2. When the substrate temperature was higher than 400°C, film composition almost corresponded with stoichiometry.
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青木 孝憲, 重田 和俊, 鈴木 晶雄, 松下 辰彦, 奥田 昌宏
2003 年 46 巻 3 号 p.
272-275
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Thin films (30 nm thick) with a stack structure (60 layers) of Ga
2O
3 and ZnO have been deposited onto glass substrates or polycarbonate disk substrates by a pulsed laser deposition method with an ArF excimer laser using a split target made of Ga
2O
3and ZnO. Transmittance differences
Δ T (T
annealed-T
as-deposited) between the annealed state and the asdeposited state for the films fabricated at trace ratio (the ratio of the time required to irradiate each side (Ga
2O
3 or ZnO) of the target by laser pulses) of 3 : 5 showed a maximum value of 40%. It was recognized by AFM observations that surface roughness R
afor the films was near 0.5 nm. It was found that the value of R
a decreased as the Ga
2O
3 contents increased. A peak power dependence of CNR of 3T signal (λ = 406 nm, NA = 0.65) at a linear velocity of 5 m/s and a read power of 0.6 mW was measured for the disk samples with 60 layers. The CNR of 53 dB was obtained for the samples prepared with the trace ratio of 1 : 51 : 0.6 at a write power of 3 mW.
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三上 智広, 柴尾 心平, 伊達 真吾, 岩井 啓二, 小川 倉一
2003 年 46 巻 3 号 p.
276-279
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Different layer stacks of the A1N/Cu/A1N multilayer films were deposited by the sputter roll coater systems. The electrical and optical properties of the multilayer films has been examined. It was found that the layer stack can be optimized to have sheet resistance below 13 Ωat a total light transmittance over 85% at 600 nm. This makes it possible to perform the deposition at ambient temperature.
This condition is favorable for deposition on polymer materials.
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西村 興男, 張 戦国, 鈴木 正昭
2003 年 46 巻 3 号 p.
280-283
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Pd-Ag alloy thin films deposited on silicon substrates by means of rf magnetron sputtering under various deposition parameters, such as rf power, Ar gas pressure and target configuration, were studied using FESEM, XPS and XRD. The surface morphology, chemical composition, chemical state and crystal structure of the films was influenced by various deposition parameters. Two different heat treatments were carried out on the films. In the oxidation atmosphere, the films were almost oxidized, while in the reduction atmosphere, Ag content and lattice constant of the films were increased.
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蒋 琴, 澤 五郎, 内田 悦行, 小嶋 憲三, 大橋 朝夫, 落合 鎮康, 水谷 照吉
2003 年 46 巻 3 号 p.
284-286
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Vanadyl-phthalocyanine (VOPc) thin films were fabricated on KC1 (100) substrate by a molecular beam epitaxy. The morphologies of VOPc thin films fabricated under different preparing conditions were investigated by using Vis/ UV spectra, AFM images and the third order nonlinear optical properties measured with Maker fringe. The morphology of VOPc thin film on a KC1 substrate has three types. The first type has VOPc molecules tilted epitaxially on KC1 substrate, the second type has pseudomorphic VOPc layers on the epitaxial layer, and the third type is the bulk VOPc crystals deposited on the pseudomorphic layer. The third order nonlinear optical susceptibility estimated from a maximum third harmonic intensity of VOPc thin film measured by Maker fringe is about 10
-9 esu. This is a practical value requested for the application to optical devices such as optical switching and memory.
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田上 学, 澤 五郎, 内田 悦行, 小嶋 憲三, 大橋 朝夫, 落合 鎮康, 水谷 照吉
2003 年 46 巻 3 号 p.
287-290
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Vanadyl-phthalocyanine (VOPc) thick films were prepared by a molecular beam epitaxy (MBE) on KBr substrate. The morphologies and nonlinear optical properties of VOPc thick films before and after organic gas treatment were investigated with Vis/UV spectra, the incident angle dependence of second harmonic (SH) and third harmonic (TH) intensity measured by Maker fringe. The Vis/UV spectrum of Sample 1 has an absorption peak at 780 nm. Therefore, the phase morphology of Sample 1 is a pseudoepitaxy. Sample 1 exposed for 25 hrs in 1.8 atm organic gas prepared with 1, 2 -dichloloethane changes from pseudoepitaxy to epitaxy. On the other hand, Sample 1 exposed in carbon tetrachloride gas does not change from pseudoepitaxy to epitaxy. These results were explained with the donor-acceptor interaction between a VOPc and carbon tetrachloride molecule.
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岸 智弥, 中西 寛, 笠井 秀明, Wilson A. DIÑO, 小森 文夫
2003 年 46 巻 3 号 p.
291-293
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
We investigate the magnetic properties of Fe nanowires on Cu (111), based on the density functional theory. As for the structures of Fe nanowires, we consider a linear structure and a zigzag structure with ferromagnetic state. We find that the magnetic moment of the Fe nanowire is larger than that corresponding to bulk Fe and a thin film of Fe. On the basis of numerical results, we discuss the origin of these magnetic properties.
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Makoto SAKURAI, Fumiharu NAKAJIMA, Masato YASUDA, Takao NANBA
2003 年 46 巻 3 号 p.
294-297
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
The structure of CH
4 monolayer physisorbed on a Ag (111) surface was observed by LEED. The LEED patterns were recorded with suppressed electron current using a cooled CCD camera in order to minimize the electron stimulated desorption of adsorbed CH
4. The LEED pattern indicated that the lattice of CH
4 molecules forms hexagonal structure in rotationally ordered incommensurate state. Under specific equilibrium condition, intermediate state with the coverage less than unity was found to exist.
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谷城 康眞, 有本 明希子, 高柳 邦夫
2003 年 46 巻 3 号 p.
298-301
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Long silver fine wires have been successfully produced by approaching or contacting an electrically biased metal tip onto silver sheet covered with silver iodide (AgI) and subsequently retracting the tip. Silver iodide which is an ionic conductor acted as a source of supply of silver atoms even at room temperature. For the diameter of sub-micrometer level, the long wires of tens of micrometer length have been formed. Moreover, nanowires showing conductance quantization have been formed. Conductance measurements of the silver nanowire were performed at a modulation bias voltage, because offset voltage appeared in the silver iodide covered silver sheet sample. This method will be applied in investigating the property of carrier transport in long metal nanowire.
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葛岡 崇, 白 良奎, 生野 孝, 大倉 重治, 本多 信一, 片山 光浩, 平尾 孝, 尾浦 憲治郎
2003 年 46 巻 3 号 p.
302-305
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
We have developed plasma enhanced chemical vapor deposition system, which can be operated with the low pressure and the low voltage. On the optimal conditions, conical shaped nanostructures with about 1 μm height and 5 × 10
6 cm
-2 in number density were grown on Ni/Si substrate by this system. Furthermore selective growth of conical shaped nanostructures was occurred by using Ni patterned substrate. The obtained conical shaped nanostructures had good emission properties.
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水島 茂喜, 植木 正明
2003 年 46 巻 3 号 p.
306-309
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Since SiO
2 film has good characteristics for surface stabilization, it is useful for the fabrication process of semiconductor. Its thickness is one of the important factors in the determination of the surface condition, and many investigations on the thickness measurement have been carried out. In this report, we apply substitution weighing method to the thickness measurement of SiO
2 film fabricated by thermal oxidation. The high-accuracy measurement can be made using the substitution weighing method, because it can cancel out the systematic effect due to the drift of the balance indication and non-linearity in the balance sensitivity. In addition, we compare the results from the substitution weighing method with that from ellipsometry. It is confirmed that these results agree within the estimated uncertainty for five samples with the average film thickness ranging from 1.3 nm to 115 nm. From this agreement, we conclude that the several assumptions and physical quantities used in these measurements are consistent with each other.
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岡村 一太朗, 長田 昭義
2003 年 46 巻 3 号 p.
310-313
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
A thin zirconia electrolyte film using solid oxide fuel cell (SOFC) was prepared on the porous Al203 substrate by the microwave plasma-enhanced chemical vapor deposition (PECVD) using two organometallic compounds of zirconium acetylacetonate and zirconium tetra-n-butylate. Zr electrolyte film was characterized based on dependence on annealing treatment and substrate temperature. The grain size of a thin electrolyte film grown using zirconium tetra-n-butylate became small compared with that of zirconium acetylacetonate. As-deposited electrolyte film grown using two organometallic compounds indicated the columnar structure and but were deformed to crystal structure with a large crack or pore occurred at grain boundary in film by annealing treatment of 400°C. Furthermore, it is also found that a pore size in film reduced by crystal growth at a higher substrate temperature.
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伊藤 浩, 大山 昌憲
2003 年 46 巻 3 号 p.
314-317
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
The growth of thin GaSe film on fused silica substrate is investigated using the electron beam deposition method. The thin GaSe films are evaluated by several measurements of the x-ray diffraction, the nano-probe microscopy and the temperature dependence of electrical conductivity. It is found that the GaSe films deposited at R.T. and 200°C have amorphous structures, while those at 300-500°C have polycrystalline structures with c-axis perpendicular to the substrate surface. The activation energy of the crystal growth of GaSe is discussed with the temperature dependence of the average lateral grain size from the surface morphologies. It is obtained that the activation energies of the thermally activated charge transport are 0.70 eV for amorphous film and 0.41 eV for crystalline film.
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大山 昌憲, 伊藤 浩
2003 年 46 巻 3 号 p.
318-321
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Thin films of the layered Gallium Sulfide (GaS) on fused silica have been grown at substrate temperature in the range 25-400°C by electron beam deposition method, and characterized through X-ray diffraction, nano-probe microscopy, optical absorption and Raman spectra studies. The films deposited at 400°C have a crystalline structure and the c-axis in the hexagonal phase is oriented perpendicular to the substrate plane. The optical properties in the crystalline GaS films follow the same mechanism as that of the GaS single crystal.
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大内 一浩, 河村 裕一, 井上 直久
2003 年 46 巻 3 号 p.
322-324
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
An InAlAs/InP type II resonant tunneling diode (RTD) integrated with an InGaAsP optical absorption layer was grown by gas-source molecular beam epitaxy (GS-MBE), and its light input dependence of the negative differential resistance (NDR) characteristic was studied. An InGaAs/GaAs semiconductor laser lasing at 1.02 μm was used as an input light source, which was irradiated through the window of the top electrode. It was found that the valley current increases with increasing the input light intensity. In addition, the Plateau region of the NDR characteristic of the InAlAs/ InP type II RTD disappears with increasing the input light intensity.
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井口 征夫
2003 年 46 巻 3 号 p.
325-328
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
Although it is generally believed that the ceramic material is brittle and is very different in deformation behevior from metallic materials, the present experimental evidence upsets this view by showing that small elongated areas of TiN formed across cracks in a TiN ceramic film during 180° bend-forming.
The TiN sample (about 1 μm thick) was deposited on a stainless steel sheet (Type 430 : 16.7% Cr) by the hollow cathode discharge (HCD) method, forming the epitaxial growth of the small areas of (001) [100]
TiN cube orientation on minor and (001) [110]
stainiess steel grains. The sample was bend-formed causing cracks perpendicular to the direction of tension, and examined by scanning electron microscope (SEM).
The elongated morphology of TiN greatly differed at the generation position; the TiN film surface and 30 μm depth beneath the surface.
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井口 征夫, 鈴木 一弘
2003 年 46 巻 3 号 p.
329-332
発行日: 2003/03/20
公開日: 2009/10/20
ジャーナル
フリー
The tensile stress of TiN- TiCN- and TiC-coated silicon steel sheets and adhesion were determined by measuring the angle curvature after coating one side with ceramic and by observation after 180° bend-forming, respectively.
The tensile stress of TiN-coated silicon steel sheet showed 10.8 MPa, whereas that of TiCN- and TiC-coated silicon steel sheets showed 9.3 and 7.7 MPa, respectively. Also, the coverage of TiN on silicon steel was estimated as 70.2%, after the bending test, while those of TiCN and TiC were 60.6% and 50.4%, respectively.
Our understanding is that the high tensile stress induced by TiN and the high adhesion of TiN to silicon steel lead the ultra low iron loss of TiN coated silicon steel.
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