Charging in depth profiling in X-ray photoelectron spectroscopy (XPS) for metal layers on insulated substrates (Au/Cr/SiO
2 (Quartz)) was studied. In the depth profiling using a neutralizer, differential charging was observed at the Cr/ SiO
2 interface by conducting the sample to the analyzer. This charging should be strongly related with the change of the surface morphology from Cr “layer” to “islands” on SiO
2 substrate during sputtering. In the insulated case from the analyzer, almost no differential charging was observed at the Cr/SiO
2 interface. This is quite helpful for the identification of chemical state at the metal/insulator interface. Thus, it is concluded that the depth profiling in XPS for metal layers on insulated substrates required a uniform surface potential at the metal/insulator interface during sputtering by insulating the sample from analyzer.
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