All issues
Volume 46, Issue 8
Displaying 1-12 of 12 articles from this issue
- |<
- <
- 1
- >
- >|
-
-Barrier Puzzle-Akira NAMIKI2003 Volume 46 Issue 8 Pages 587-592
Published: August 20, 2003
Released on J-STAGE: January 30, 2010
JOURNAL FREE ACCESSDownload PDF (870K) -
Takahisa OHNO2003 Volume 46 Issue 8 Pages 593-599
Published: August 20, 2003
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (1099K) -
Michio NIWANO2003 Volume 46 Issue 8 Pages 600-606
Published: August 20, 2003
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (1073K) -
Marukus WILDE, Katsuyuki FUKUTANI, Z. LIU, Sinji FUJIEDA2003 Volume 46 Issue 8 Pages 607-612
Published: August 20, 2003
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (757K) -
Sakae S. INAYOSHI, Kazuya SAITO, Touru SUMIYA2003 Volume 46 Issue 8 Pages 613-618
Published: August 20, 2003
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSWater desorption from stainless steel was reduced by silicon-carbon coatings deposited by chemical vapor deposition (CVD). Two types of film coatings were examined, both of which used organosilicon compounds as source materials. One was hexamethyldisiloxane (HMDSO), and the other was hexamethyldisilazane (HMDS). The surfaces of the film coatings exposed to atmospheric air were thought to be oxidized by oxygen and water in air. The amount of water desorbed from the stainless steel samples coated with either type of the films was less than 1/10 of that from the electropolished sample as measured through the thermal desorption spectroscopy. The amount from the coated samples was equivalent to the order of 1/100 of the water monolayer. The analysis by Auger electron spectroscopy showed that both films were composed of 50 at.% silicon and 40 at.% carbon. The remainder of the film deposited from the HMDSO was oxygen, and that of the film from the HMDS was nitrogen.View full abstractDownload PDF (1334K) -
Naoki TAKAHASHI, Junpei YUYAMA, Yutaka TUZI, Ichiro ARAKAWA2003 Volume 46 Issue 8 Pages 619-623
Published: August 20, 2003
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSThe effect of disturbances induced by the injection of the electrons and ions from outside of the gauge on the axial-symmetric transmission gauge (AT gauge) was examined. There were less sign of disturbance in comparison to a BA gauge and an extractor gauge. The energy analyzer in the AT gauge works as a cut off filter for the charged particles and reduces the disturbances from the external source as well as the effects of the soft x-rays and ESD (electron stimulated desorption) ion generated in the ionizer.View full abstractDownload PDF (584K) -
Ken KAWAMATA, Takeshi DEGUCHI2003 Volume 46 Issue 8 Pages 624-627
Published: August 20, 2003
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSWhen Magnesium fluoride was sputtered by conventional techniques, molecular dissociation into Mg and F, and thus fluorine deficiency and optical absorption occured. We have found that sputtering in the form of molecules occured at high temperature of the Magnesium fluoride target. We have named this method K-M-S (Keep-Molecules S puttering).
In this paper, improvement of repeatability of K-M-S method were tried and discussed. Pre-sputtering of the target were started when H2O partial pressure became the constant value. RF power was controlled to make the ratio of optical emission intensity (MgF/O) constant. The repeatability of the deposition rate has improved to ±17%.View full abstractDownload PDF (403K) -
Yuji NOBUTA, Yuji YAMAUCHI, Yuko HIROHATA, Tomoaki HINO, Akio SAGARA, ...2003 Volume 46 Issue 8 Pages 628-631
Published: August 20, 2003
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSSeveral material probes of SS 316L and graphite were placed on the plasma facing walls of Large Helical Device (LHD) along poloidal and toroidal directions during 4th experimental campaign, in order to investigate the plasma surface interactions and the wall conditions. The retained amount of helium was large in the probes located near the plasma, while, that of hydrogen was large far from the plasma. The retained amounts of discharge gases, impurity gases and the deposition of iron were large near the glow discharge anodes.View full abstractDownload PDF (586K) -
Akio SUZUKI, Yoshiyuki TANI, Takanori AOKI, Tatsuhiko MATSUSHITA, Masa ...2003 Volume 46 Issue 8 Pages 632-635
Published: August 20, 2003
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSThe thin films of ZnO doped with 4 wt% Ga2O3 were deposited on glass substrates by pulsed laser deposition using an ArF excimer laser (λ= 193 nm). A heated mesh was given was arranged between the target and the substrate. In all experiments, repetition rates of 10 Hz, the energy density of 1 J/cm2, and an ablation time of 60 min were used. A lowest resistivity of 3.71×10-4 Ω·cm and an optical transmittance of more than 80% in the visible range of the spectrum were obtained for ZnO doped with 4 wt% Ga2O3 films of more than 200-nm thickness fabricated at a substrate temperature of R.T. and a gas flow rate in O2 of 4 sccm. Smooth surfaces with an average surface roughness of 1.1 nm were observed by field-emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM).View full abstractDownload PDF (820K) -
Taro MITAKE, Keisuke ISHII, Aki TOSAKA, Takashi MIURA, Ichiro ARAKAWA2003 Volume 46 Issue 8 Pages 636-639
Published: August 20, 2003
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSA two-parameter auto-null ellipsometer system was constructed and applied for precise observation of the growth of rare gas films physisorbed on a metal surface in quasi equilibrium condition. We obtained the adsorption isobar of Xe/Ag (111) at P = 2.5×10-6Pa, which shows the layer by layer growth of the Xe film up to the third layer. The relative of polarizability of a Xe atom in the second and the third layer to that of the first layer are 0.94 and 0.91, respectively.View full abstractDownload PDF (487K) -
[in Japanese]2003 Volume 46 Issue 8 Pages 640-641
Published: August 20, 2003
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (269K) -
[in Japanese]2003 Volume 46 Issue 8 Pages 642-645
Published: August 20, 2003
Released on J-STAGE: October 20, 2009
JOURNAL FREE ACCESSDownload PDF (559K)
- |<
- <
- 1
- >
- >|