Shinku
Online ISSN : 1880-9413
Print ISSN : 0559-8516
ISSN-L : 0559-8516
Volume 48, Issue 1
Displaying 1-11 of 11 articles from this issue
Prefatory Note
Essay
Special Issue: SiGe Thin Films Growth and Manufacturing Equipment Technology
Reviews
Article
  • Takeshi MURATA, Maki SUEMITSU
    2005 Volume 48 Issue 1 Pages 23-27
    Published: 2005
    Released on J-STAGE: August 11, 2006
    JOURNAL FREE ACCESS
    Germane (GeH4) adsorption at Si (001) at room temperature has been investigated through observations of surface hydrides by means of temperature-programmed desorption and multiple-internal-reflection Fourier-transformed infrared spectroscopy. For surfaces with considerable concentration of dimer vacancies, prepared by in-situ thermal cleaning followed by rapid cooling, saturation with germane presented almost full coverage of SiH without any Ge or Si-higher hydrides, which strongly suggests site exchange between ad-Ge and substrate Si atoms. For a smoother surface prepared by forming a Si epilayer, the Ge dihydride is much populated at higher doses of germane. From measurements using (1 × 2) single domain surface and polarized lights in FTIR, the Ge dihydrides are found to be at their “in-dimer” position rather than the “intra-row” position.
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Product Notes
Regular Papers
Review
Articles
  • Takashi KUBO, Makoto TANAKA, Hiroaki KAWATA
    2005 Volume 48 Issue 1 Pages 39-42
    Published: 2005
    Released on J-STAGE: August 11, 2006
    JOURNAL FREE ACCESS
    In order to study the influences from electrode material on the 13.56 MHz capacitive discharges, the measurements are performed in argon at 6 Pa-60 Pa by using a self-compensated Langmuir probe in an asymmetrical planar type reactor. The results indicate that an Al electrode shows higher electron density compared to Fe and Cu electrodes under the same pressure and the same self-bias dc voltage (Vdc). Although the differences of the electron densities due to the changes of the surface materials shrink for low gas pressures, a clear distinction is acknowledged around the threshold voltage, where the discharge mode changes from α type to bi-Maxwellian type at 6.7 Pa.
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  • Hiroyuki TSUGANE, Hiroyuki SHIMIZU, Takashi MISHIBA, Masato YOSHIOKA
    2005 Volume 48 Issue 1 Pages 43-47
    Published: 2005
    Released on J-STAGE: August 11, 2006
    JOURNAL FREE ACCESS
    A twistable bellows has been newly developed in order to adjust twisted displacement around its axis. The bellows consists of several convolutions with eccentric inner circle to the outer circle. It is experimentally proved that the bellows can be continuously used without failure for more than 1 million times of repeated twist up to 10 degrees of twist angle. Besides, it is also confirmed that the bellows is sufficiently conformable to repeated continuous expansion and contraction displacement, similarly to a normal bellows. Finally, the most suitable eccentric distance was discussed based on the stress distribution in the bellows under the torsional displacement, analyzed by means of finite element method (FEM). From the analytical result, it was supposed that 2 mm of the eccentric distance is the most appropriate for the proposed size of the bellows with a diameter of 70 mm for the outer circle.
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