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Volume 49, Issue 3
46th Vacuum Symposium Proceedings (Tokyo 2005)
Displaying 1-27 of 27 articles from this issue
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Letters
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Aki TOSAKA, Tetsuya NISHIGUCHI, Hidehiko NONAKA, Shingo ICHIMURA2006 Volume 49 Issue 3 Pages 123-125
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSSilicon oxidation process using UV-light excited ozone, i.e., ca. 100% ozone atmosphere irradiated by KrF excimer laser light (λ=248 nm), is one of the most promising techniques to fabricate a high-quality SiO2 film at low temperatures. To clarify the mechanism of the silicon oxidation and to optimize the conditions of oxidation, we have done a time-resolved measurement of ozone density. The result shows that there are three stages of ozone density change. The calculated ozone density based on a reaction model fits the observed density at the first stage.
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Kazuto KOIKE, Takuma KATOH, Hisashi HARADA, Hi-izu OCHI, Mitsuaki YANO2006 Volume 49 Issue 3 Pages 126-128
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSThe effect of H2 plasma irradiation on a Cl-doped CdTe(111)B crystal was studied by comparing with that of the same irradiation but combined with a post-irradiation thermal annealing in a Cd ambient. Photoluminescence (PL) property of the CdTe crystal was found to be degraded by a two-months storage in a low-pressure desiccator. Electron spectroscopy for chemical analysis revealed that native oxide such as TeO2 was formed on the CdTe surface after the storage. Irradiation by H2 plasma was effective to remove the oxide completely. However, the PL property after the H2 plasma irradiation did not recover the original one due to the formation of Cd vacancy by ion bombardment. The post-irradiation annealing was found to be effective to recover the damage by ion bombardment.
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Hajime YOSHIDA, Kenta ARAI, Sakae KOMATSU, Satoshi AKIMICHI, Masahiro ...2006 Volume 49 Issue 3 Pages 129-131
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSIt is necessary to generate a stable vacuum field for calibration of vacuum gauges by direct comparison with a reference gauge. According to ISO/TS 3536, it is required that the pressure indicated by the gauges shall be stable over time so that it dose not change more than 0.5% for time period of 2.5 min. In this study, three methods to generate a vacuum filed, namely, by using a variable leak valve, a mass flow controller and a combination in a capillary with a pressure controller, are evaluated from the viewpoint of both the stability and dynamic range of generated pressure.
The vacuum field generated by a combination in a capillary with a pressure controller is the most stable of the three methods and satisfied the ISO/TS 3536 requirement over the range from 3.1×10-4 to 4.8 Pa. This method is effective to generate a stable vacuum field for calibration of vacuum gauge.
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Masaya OISHI, Tetsuhiko YORITA, Yukiko TANIUCHI, Nobuteru NARIYAMA, Ts ...2006 Volume 49 Issue 3 Pages 132-134
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSThe SPring-8 Storage Ring has been operated since 1997, and the integrated electron beam dose was achieved over 2750 A•hr. Electric cables have been irradiated with the high-intense scattered X-ray from photon absorber, and are damaged. Then we measured the absorbed dose along the laying route of radiation damaged ion pump cable, and compared the result with that of various analyses of the damaged cable. As a result, it was confirmed that absorbed dose correlate closely with mechanical strength, and the melting point of the insulator.
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Yusuke SUETSUGU, Mitsuru SHIRAI, Michio OHTSUKA2006 Volume 49 Issue 3 Pages 135-137
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSThe MO (Matsumoto-Ohtsuka)-type vacuum flange was applied to a beam duct of the KEK B-Factory (KEKB) positron ring, following a previous basic experiment1). The aperture was complicated, i.e., a circular beam channel with two rectangular antechambers, but a stable vacuum sealing was achieved with a reasonable fastening torque of 14-15 Nm. The final gap between flanges was larger than that in the case of a test with a blank flange. Welding of the flange to a beam duct seemed to increase its mechanical strength. Up to the stored beam current of 1700 mA, no problem, such as excess heating or arcing, was found. A copper-ally MO-type flange was also examined, considering a case of connecting to a copper beam duct. The vacuum sealing was successfully achieved at a fastening torque of 12-144Nm, even with a baking at 150°C for 24 hours.
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Yoshiharu MOGAWA, Shin-ya OHNO, Ken-ichi SHUDO, Masatoshi TANAKA2006 Volume 49 Issue 3 Pages 138-140
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSThe electronic states and the optical-transitions of Si(111) clean and Cl-adsorbed surfaces have been calculated using time-dependent density functioal theory (TD-DFT). Two clusters, Si21H27 and Si21H27Cl, are chosen for the models to stand for the clean and Cl-adsorbed Si(111) surfaces, respectively. The imaginary part of the dielectric function is related to the transition probability obtained by calculation of optical-transitions to the excited states. The imaginary part is transformed into the real part through Kramers-Kronig relation, and the reflectance is figured out. Surface differential reflectivity (SDR) spectrum of Cl-adsorption is obtained from the reflectance of clean and Cl-adsorbed surfaces. The calculated spectrum is in good agreement with experimental spectrum. Moreover, applying TD-DFT to the electronic excitation on the Si(111) surface, we can analyze the surface adsorption by means of optical measurements.
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Masafumi HORI, Satoshi KATANO, Yousoo KIM, Maki KAWAI2006 Volume 49 Issue 3 Pages 141-143
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSThe growth and assembly of aminobenzoate (NH2C6H4COO-) isomers (ortho, meta and para) on Cu(110) have been investigated with a scanning tunneling microscope (STM) at 4.7 K. At the initial stage, well-ordered islands of (4×3) and (3×4) superstructures are formed for ortho- and para-aminobenzoate layers, respectively. The growth of ortho- and para-aminobenzoate layers were found to proceed in different manner from each other, which is responsible for the intermolecular interaction through the hydrogen bonding. In the case of meta-aminobenzoate, short-ranged (6×4) superstructures were observed. Our STM study clearly demonstrates that the substituent position on the aminobenzoate affects not only the superstructure patterns but also their growth process. We suggest that the hydrogen bonding plays a key role in the molecular linkage, being controlled by positioning of the substituents.
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Yohta OWA, Masahiro KOMA, Takanori IIDA, Shin-ya OHNO, Ken-ichi SHUDO, ...2006 Volume 49 Issue 3 Pages 144-146
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSThe halogen-adsorbed Si(111) surfaces were investigated at the very low coverage with scanning tunneling microscope (STM) and surface differential reflectance (SDR). From SDR spectra, we determined the densities of the reacted adatom dangling bonds and the broken adatom back bonds. At the initial stage, STM images showed that the bromine atoms tended to be adsorbed on the site adjacent to the bromine adsorbed ones, in contrast to the behavior of chlorine atoms. The poly-bromide formation was found with STM above 0.1 ML. This coverage is consistent with that shown by SDR spectra, which revealed bromine atoms begin to break adatom back bonds at lower coverage than chlorine does. In the case of chlorine atoms, the back bond breaking does not take place until 0.3 ML. The origin of the different behavior was discussed in terms of the local modification of electronic states and the reactivity between Si surface and each halogen atom.
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Yuji TORIKAI, Daiju MURATA, Ralf-Dieter PENZHORN, Kenya AKAISHI, Kunia ...2006 Volume 49 Issue 3 Pages 147-149
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSTo investigate the behavior of hydrogen uptake and release by 316 stainless steel (SS316), as-received and finely polished stainless steel specimens were exposed at 573 K to tritium gas diluted with hydrogen. Then tritium concentration in the exposed specimens was measured as a function of depth using a chemical etching method. All the tritium concentration profiles showed a sharp drop in the range of 10 μm from the top surface up to the bulk. The amount of tritium absorbed into the polished specimens was three times larger than that into the as-received specimen. However, the polishing effects disappeared by exposing to the air for a long time.
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Tsuyoshi MAEDA, Hideaki AGURA, Akio SUZUKI, Takanori AOKI, Tatsuhiko M ...2006 Volume 49 Issue 3 Pages 150-152
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSApproximately 300-nm-thick 1.5 wt.% Al-doped zinc oxide(AZO: 1.5 wt.% Al2O3) films have been deposited on glass substrates and PVC substrates at room temperature by a pulsed laser deposition (PLD) using ArF excimer laser (λ=193 nm). The film deposition was carried out under the condition of laser energy density with 2 to 5 J/cm2. For AZO films deposited on PVC substrates with low laser energy density, electrical and optical properties were equivalent to that for AZO films deposited on glass substrates. However, for AZO films prepared by high laser energy density, the value of surface roughness was large and the value of Hall mobility remarkably decreased compared to that for AZO films grown on glass substrates.
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Yasunori TAKASE, Hideaki AGURA, Atsuhiro NAKAMURA, Yoshinori HIGASHIMU ...2006 Volume 49 Issue 3 Pages 153-155
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSApproximately 200-nm-thick 1.5 wt.% Al-doped zinc oxide (AZO: 1.5 wt.% Al2O3) films have been deposited on glass substrates at 100°C by pulsed laser deposition (PLD) using the fourth harmonic generation (FHG) of Nd: YAG laser (λ=266 nm). In order to reduce resistivity of as-deposited films, annealing process was carried out by ArF excimer laser with laser energy density of 34 mJ/cm2. As a result, the value of resistivity was not almost improved: 1.54×10-3 Ω•cm (for as-deposited) and 1.33×10-3 Ω•cm (for annealed). On the other hand, for the films annealed by fourth harmonic generation of Nd:YAG laser with laser energy density of 20 mJ/cm2, the value of resistivity was reduced from 1.36×10-3 Ω•cm to 8.34×10-4 Ω•cm.
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Kazuaki TAKESAKO, Yuta OKAYAMA, Keishi KAWABATA2006 Volume 49 Issue 3 Pages 156-158
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSThe dependence of substrate dc bias voltage on structural properties of Ni thin films using magnetron sputtering with multipolar magnetic plasma confinement (MMPC) assisted by inductively coupled plasma (ICP) was investigated. When magnetron sputtering with MMPC assisted by ICP was applied, the current flowing into the substrate due to Ar+ ions and sputtered Ni+ ions was increased. Ni thin films were deposited due to the ions energy controlled by each substrate dc bias voltage from 0 V to -80 V. The Ni thin films were analyzed by X-ray diffraction (XRD) and a transmission electron microscope (TEM). It is shown that applying the substrate dc bias voltage results in a significant change of the relative intensity of the orientation of (111) plane and an increase in the grain size.
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Yuta OKAYAMA, Kazuaki TAKESAKO, Hirokazu KOSE, Keishi KAWABATA2006 Volume 49 Issue 3 Pages 159-161
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSWe have developed an rf sputtering with multipolar magnets around the target in the rf sputtering system of a magnetic Ni (200 mmφ, 5 mm thick) target to deposit Ni thin films. When permanent magnets, made of Nd-Fe-B material with a surface magnetic flux density of 0.57 T, were placed around the Ni target outside the vacuum chamber, a magnetic flux density measured at the position of 5 mm above the target surface was distributed in the range of 0~0.37 T.
It is shown that the deposition rate significantly increases from 3.7 to 5.4 nm/min with values increased up to two times that of a conventional rf sputtering. It is also revealed that the discharge produced by an rf sputtering with external magnets can be sustained at a lower Ar gas pressure of down to 8.0×10-1 Pa.
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Yukiko OKANO, Shuichi TAJIRI, Takashi AOZONO, Akio OKAMOTO, Soichi OGA ...2006 Volume 49 Issue 3 Pages 162-164
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSThe temperature dependence of the electrical resistivity of TaAl-N thin film was investigated and the characteristics of the thin film was applied to measure a pressure over a wide range in vacuum. The thin films, having been prepared by reacted DC magnetron sputtering method and deposited on the polyimide sheet, have characteristics that make them suitable for using as the thermo-conductive vacuum sensor; a large effective sensing area, a small heat capacity, and a large temperature coefficient of the resistivity (TCR) compared to a metal wire. The thin films was found sensitive to pressure change in the range of 10-4 to 105 Pa.
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Mikihiro KATO, Shizuyasu OCHIAI, Goro SAWA, Yoshiyuki UCHIDA, Kenzo KO ...2006 Volume 49 Issue 3 Pages 165-167
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSVanadylphthalocyanine (VOPc) thin films with thicknesses from 100 nm to 300 nm were prepared by a molecular beam epitaxy method on KCl substrate. The molecular orientation and phase morphologies in VOPc thin film deposited on KCl substrate were investigated by Vis/UV spectra measured with each sample using a Vis/UV spectrophotometer, AFM images were measured using atomic force microscopy and the laser light incident angle dependences of second and third harmonic (SH and TH) intensities were measured by the Maker fringe method using an Nd-YAG laser. It is commonly understood that the VOPc thin film prepared on the KCl substrate has three types of phase morphology. One is epitaxy, two is the pseudomorphic layer and three is Phase I. For a thickness of 300 nm, the phase morphology which appeared in the surface neighborhood differs from the three types. The relationship between the new phase morphology and the TH intensity is analyzed using a theoretical method.
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Yonglong JIN, Shizuyasu OCHIAI, Goro SAWA, Yoshiyuki UCHIDA, Kenzo KOJ ...2006 Volume 49 Issue 3 Pages 168-170
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSWe have fabricated organic field effect transistors constructed with pentacene active layers grown by vacuum deposition, polycarbonate (PC) gate dielectric layers fabricated by spin-coating and polyethylene naphthalate thin films used as substrates. The surface morphology of PC thin films was observed by atomic force microscopy (AFM). It was confirmed that the surface morphology of PC thin films had smoothness at a molecular level, although there was a problem to keep a balance between insulation property and smoothness of the surface. From the performance of the obtained organic field effect transistor, the carrier mobility was estimated to be 0.7×10-3 cm2/Vs, the on/off ratio to be 102 and the sub threshold voltage to be 32 V.
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Yasuo IIMURA, Kazuhiro TAKUSHIMA, Takeo NAKANO, Shigeru BABA2006 Volume 49 Issue 3 Pages 171-173
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSThe mode transition of the DC reactive sputter deposition process has been studied for the fabrication and the stoichiometry control of SiOX films. At a fixed Ar flow rate of 20 sccm and a pressure of 1 Pa (hence the pumping speed was also fixed), oxygen flow rate was modified and the transition between the metal and oxide modes was monitored by the cathode voltage. With a constant current operation of a DC power source, well known steep and hysteretic mode transition appeared. On the other hand, gentler transition with no hysteretic character was observed in a constant power operation. In the latter case, the dependence of the deposited film composition on the oxygen gas flow rate was examined by X-ray photoelectron spectroscopy. The increase in the film composition x from 0.5 to 2.0 was observed in a smaller flow rate region compared to the process mode transition. It can be attributed to the non-uniform deposition of Si atoms which work as oxygen absorber.
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Isao KIMURA, Yutaka NISHIOKA, Shin KIKUCHI, Koukou SUU2006 Volume 49 Issue 3 Pages 174-176
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSIn this study, SME-200 (ULVAC and Inc.) was the mass production system of a PZT deposition got over the problems, and it was there, and deposition temperature of PZT thin films were investigated as a parameter by this research. (100)/(001) and (111) oriented Pb(Zr, Ti)O3 Piezoelectric thin films were fabricated on (111)Pt/Ti/SiO2/Si substrate using a RF magnetron sputtering technique. Polarization and displacement in these films were simultaneously observed through an atomic force microscope (AFM) that was attached to a ferroelectric test system. As a result, 3-μm-thick PZT film with Pr value of 41 μm/cm2 at an applied voltage of 30 V were obtained for (100)/(001) oriented film.
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Kiyohiro HINE, Satoru YOSHIMURA, Takuya MAEDA, Masato KIUCHI, Satoshi ...2006 Volume 49 Issue 3 Pages 177-179
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSAu deposition rates were measured as a function of Au ion injection energy with the use of a low-energy mass separated ion beam deposition apparatus. Unlike similar measurements reported earlier, in the present experiments, the quality of ion beams (i.e., their mass and energy spectra) was also examined. In the deposition experiments, the Au ion beam was injected into a gold-coated quartz crystal microbalance (QCM), which measures the mass of deposited Au atoms for the given ion beam current. The measured deposition rates in the energy range of 40-200 eV are consistent with those reported in earlier works.
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Nobutoshi ARAI, Hiroshi TSUJI, Naoyuki GOTOH, Takashi MINOTANI, Hiroyu ...2006 Volume 49 Issue 3 Pages 180-182
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSElectric characteristics of 25-nm-SiO2/Si films embedded with Ge nanoparticles were investigated by CV method. Ge nanoparticles were formed by negative ion implantation and subsequent thermal annealing. Ge atoms in the SiO2 were evaluated by high-resolution RBS and cross-sectional TEM. Ge atoms were implanted at 10 keV with 1×1015 and 5×1015 ions/cm2. The samples were annealed at 300, 500, 700 and 900°C for 1 h. After annealing at 900°C, Ge atoms diffused down to SiO2/Si interface, so the sample could not be evaluated by CV method. After annealing at 300°C, the voltage shift in the hysteresis of a CV curve was very small, so it could not be applied to the memory devices. While after annealing at 500°C, the voltage shifts of both samples implanted with doses of 1×1015 and 5×1015 ions/cm2 were wide. Calculations of charge and nanoparticle intensity from flat band shift and from implanted Ge dose show that each nanoparticle with about 3-nm diameter has only one electron. These results suggest that thin SiO2 films embedded with Ge nanoparticles formed with negative ion implantation can be applied to the memory devices.
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Hiroyuki KOUSAKA, Hitoshi IIDA, Noritsugu UMEHARA2006 Volume 49 Issue 3 Pages 183-185
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSWe found high-density plasma generated by microwaves propagating along metal surface at a negative voltage against a grounded chamber. Magnetic probe measurement showed that 2.45-GHz microwaves propagated as surface waves that were guided by the interface between the high-density plasma and underdense region in ion sheath surrounding the metal surface. The same phenomenon was demonstrated to occur in a narrow metal tube 7.5 mm in inner diameter, where surface waves were considered to propagate along the interface between a high-density plasma column in the tube and underdense region in ion sheath formed along the inner wall of the tube.
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Kentarou OONO, Rieko TAKAMATSU, Shoji TAKAGI, Tetsuji GOTOH2006 Volume 49 Issue 3 Pages 186-188
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSDesorption of Cd adsorbed on Montmorillonite (Mt), Pyrophyllite (Py), Hydroalminum montmorillonite (HyA-Mt) is observed by means of QMS. The desorption peak temperatures of Cd are 730°C from Mt, 820°C from Py and beyond 900°C from HyA Mt, respectively. Cadmium absorbs on the side surface of the octahedral sheet for Mt and Py. However the desorption peak temperature of Cd from Py is higher than Mt because of the structure of Py, which is more thermaly stable than the structure of Mt. For HyA-Mt, Cd adsorbs mainly on the Al(OH)3 layer. Desorption peak temperature of Cd from Al(OH)3 layer is higher than that from the side surface of the crystal.
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Masaya WATANABE, Yoshiro KUSUMOTO, Ryuichi TERAJIMA, G. H. SHEN2006 Volume 49 Issue 3 Pages 189-191
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSNumerical simulation including the space charge effect was carried out to determine the basic parameters for a newly designed 100 kW (40 kV, 2.5 A) Pierce-type electron gun. It is required that the electron beam of 2.5 A could pass through the aperture hole without colliding with the electrode and lens assembly. Three models of electrode assembly, were examined, A) with a cone-shaped Wehnelt B) with a spherical Wehnelt, and C) same as B except a larger anode hole. The space charge limited current exceeds 2.5 A for model B and C. However, electron beams in model B collide with the anode inlet irrespective of the operating conditions. The model C was found to satisfy the requirement under an adequate operating condition of electromagnetic lens.
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Kenichi IWATA, Yoshiro KUSUMOTO2006 Volume 49 Issue 3 Pages 192-194
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSThe flux distribution of sputtered particles onto a circular substrate was numerically investigated, considering the ambient gas flow and the gas heating effect induced by sputtered particles. To explore the gas flow and the gas heating effects separetely, two calculation methods were employed, namely the test multi-particle method (TMP) and the direct simulation Monte Carlo method (DSMC). The TMP with a frozen ambient gas flow was found to be suited for calculating the gas flow effect on a sputtered particle much heavier than Ar. For a lighter particle of which mass is comparable with or less than Ar, the DSMC becomes indispensable, because the rarefaction due to the gas heating increased the sputtered flux by 10% compared with that obtained by the TMP.
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Kenji FURUYA, Shinobu YUKITA, Hiroshi OKUMURA, Ryoichi NAKANISHI, Mako ...2006 Volume 49 Issue 3 Pages 195-197
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSThe growth of gaseous neutral species and positive ions has been investigated in the downstream region of perfluorocompounds plasmas by mass spectrometry. As a result, there were several series of CnF2n+1+, CnF2n-1+ and CnF2n-3+ for the positive ions and CnF2n+2 and CnF2n for the neutral species up to 400 amu in the Ar/CF4 plasmas. The logarithmic plots of the CnF2n+1+ intensity at n≥2 and the CnF2n-1+ intensity at n≥3 with respect to the mass number in the CF4 case were decreased linearly with increase of the mass number. Such property in the plots can be explained by considering the rate equations for the addition reactions of CF2 to CnF2n+1+ at n≥2 and CnF2n-1+ at n≥3 under the steady-state approximation. Nano-particle formation using the macromolecules growing in the downstream region of the Ar/c-C4F8 plasma was confirmed through X-ray photoelectron spectroscopy and atomic force microscopy.
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Kenji ODAGAWA, Mitsuru SADAMOTO, Shigeru ONO2006 Volume 49 Issue 3 Pages 198-200
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSAn apparatus for the inner-surface treatment of tube connectors by atmospheric pressure plasma generated by opposed coaxial electrodes using RF power was developed. We found that good hydrophilic property of the tube connectors could be obtained by forming minute flutes on the inner electrode, where gas can flow, limiting discharge space to the flute. This report describes the changes in the hydrophilic property by the improvement of the electrode structure of the opposed coaxial type and the results compared with the double spiral type to clarify features of the treatment property of the opposed coaxial type.
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Hiroyuki YOSHIKI, Yuichi KOMATSU, Ayato SUZUKI2006 Volume 49 Issue 3 Pages 201-203
Published: 2006
Released on J-STAGE: December 22, 2006
JOURNAL FREE ACCESSA microwave rectangular plasma was generated over 450 mm long using a sectorial horn antenna with the aperture of 400×10 mm2 and permanent magnets. High density plasma was efficiently produced due to the electron cyclotron resonance (ECR) heating. Ion saturation current density of 5-10 mA/cm2 for Ar plasma was attained in the vicinity of the ECR zone which is close to the quartz window. The spatial plasma uniformity of ±7% was obtained over 300 mm long at 400 W, 1.0 Pa at the position of 160 mm away from the quartz window. This plasma source was applied to the surface modification of the high density poly(ethylene) (HDPE) and poly(tetrafluoroethylene) (PTFE) sheets. After Ar plasma irradiation at 400 W, 10 Pa and 150 s, the contact angles on the HDPE and PTFE surfaces decreased from 82° to 31° and from 90° to 49°, respectively. In addition, the uniformity on the plasma treatment was ±7% for HDPE and ±5% for PTFE over 420 mm long. X-ray photoelectron spectroscopy (XPS) analysis showed that defluorination and the formation of C=O groups appeared on the plasma treated surfaces.
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