Journal of the Vacuum Society of Japan
Online ISSN : 1882-4749
Print ISSN : 1882-2398
ISSN-L : 1882-2398
51 巻 , 4 号
選択された号の論文の9件中1~9を表示しています
小特集 1 「実用材料としてのナノ・カーボン―現状と展望―」
解説
小特集 2 「スパッタリングをめぐる技術」
解説
  • 大津 康徳, 藤田 寛治
    2008 年 51 巻 4 号 p. 254-257
    発行日: 2008年
    公開日: 2008/06/04
    ジャーナル フリー
      Plasma sputtering technique has been widely used for thin film coating technology such as microelectronics, bioelectronics, and so on. It is possible to generate particles in the sputtering plasma and they cause a contamination to the films. The following results on particles have been obtained by the capacitively coupled radio frequency (RF) plasma sputtering without a magnetic field using a carbon target. In the case of the sputtering mode with high power of 200-300 W, particles are not formed in plasma. However, when changing from the sputtering mode to the non-sputtering mode with low power of 40W, particles were detected and then were collected near a sheath edge of the target. In the non-sputtering mode, particles were grown with time and then their position shifted from the sheath edge to plasma region. Subsequently, these particles fell because of an unbalance between gravity and electrostatic force acted on particles. It was revealed that the growth rate increases with time of the sputtering mode and, in particular with the gas pressure.
  • 豊田 浩孝
    2008 年 51 巻 4 号 p. 258-263
    発行日: 2008年
    公開日: 2008/06/04
    ジャーナル フリー
      Measurement and control of high-energy Ar species in the magnetron plasma source is discussed. From energy distribution measurement of Ar+ in the plasma, existence of high-energy Ar atoms in the magnetron plasma source is confirmed. It is concluded that collision of high-energy Ar atom with background thermal Ar atom is the dominant ionization mechanism for the production of high-energy Ar+. Based on this ionization mechanism, a Monte Carlo code is developed to simulate the Ar+ energy distribution and the results are in good agreement with the experimental ones. A new technique to suppress high-energy Ar species i.e., VHF-DC superimposed magnetron sputter source, is proposed. Compared with conventional magnetron sputter sources, this new sputter source shows lower Ar energy, which is consistent with the simulation result. The VHF-DC superimposed magnetron plasma is successfully applied to the deposition of magnetic multilayer films with very thin (<1 nm) layer thickness and good magnetic anisotropy.
  • 村本 哲也, 剣持 貴弘
    2008 年 51 巻 4 号 p. 264-269
    発行日: 2008年
    公開日: 2008/06/04
    ジャーナル フリー
      Low-energy sputtering is studied through molecular dynamics (MD) and binary-collision approximation (BCA) simulations. First, MD simulations as a preliminary study are performed for 5 keV Ar impacts on a Cu target. When random numbers gave the direction of the target crystal axis for each impact, the total sputtering yield almost agreed with the experimental yield of a polycrystalline Cu target. Second, we performed MD and BCA simulations for self-sputtering of W with incident energy of 100 eV and incident angles of 0°-85°. We found that the many-body collision results in high-yield sputtering at grazing incidence. The incident angle dependence of sputtering yields fade out for an MD result with a rough surface.
一般論文
報告
講座
feedback
Top