Journal of the Vacuum Society of Japan
Online ISSN : 1882-4749
Print ISSN : 1882-2398
ISSN-L : 1882-2398
55 巻, 12 号
選択された号の論文の8件中1~8を表示しています
  • 松田 七美男
    2012 年 55 巻 12 号 p. 515-519
    発行日: 2012年
    公開日: 2013/08/08
    ジャーナル フリー
      日本真空学会では,真空科学・技術およびその関連分野の発展に寄与した顕著な業績に対し,毎年,熊谷真空科学論文賞,真空技術賞,真空進歩賞の表彰を行っています.さらに本年度は新たに真空会誌賞の表彰が加わりました.本年度も会誌 Journal of The Vacuum Society of Japan の第 3 号で受賞候補業績(候補者)の公募を行い,論文賞 3 件,技術賞 7 件,進歩賞 5 件,会誌賞 7 件の推薦がありました.
      表彰審査会では 6 名の委員が推薦された業績の審査にあたりました.慎重に審議を重ねた結果,審査会は下記の業績を受賞候補として推薦することとし,理事会においてこれが承認され,各賞の表彰が決定いたしました.熊谷真空科学論文賞は,本年度,該当する業績はありませんでした.
      なお,授賞式と受賞記念講演は11月14日,第53回真空に関する連合講演会において行われました.
小特集「太陽電池における開発動向と将来展望」
解説
  • 増田 淳
    2012 年 55 巻 12 号 p. 520-528
    発行日: 2012年
    公開日: 2012/12/28
    ジャーナル フリー
      Although photovoltaic industry rapidly grows, photovoltaic-module and related manufacturers face severe economic situation because of surprising price reduction mainly due to too much supply over demand. However, steady technological development is most important even in such situation for future continuous prosperity in photovoltaic industries. Thinner wafer is one of the key technologies for cost reduction of crystalline silicon solar cells. Various methods have been developed for improved properties of thinner wafer crystalline silicon solar cells. Mass production starts for compound thin-film solar cells including cadmium telluride and copper-indium-gallium-selenide. Various types of polymer materials and interconnector ribbons are used in module-manufacturing processes and those materials determine the reliability of modules. Such technological issues will be discussed in this article for crystalline silicon, compound thin-film solar cells and modules after short overview of photovoltaic markets.
  • 松村 英樹, 小山 晃一
    2012 年 55 巻 12 号 p. 529-534
    発行日: 2012年
    公開日: 2012/12/28
    ジャーナル フリー
      This is to demonstrate recent progress of Cat-CVD technology, particularly for application to high efficiency crystalline silicon (c-Si) solar cells. Surface recombination velocity (SRV) of c-Si, which is one of major factors deciding efficiency of solar cells, can be lowered to 1.5 cm/s or less by coating c-Si surface with Cat-CVD silicon-nitride (SiNx)/ amorphous-silicon (a-Si) stacked layers. The value is extremely low compared with ones obtained by other conventional technologies. Phosphorus (P) atoms can be also doped into c-Si at temperatures as low as 80℃ with using species generated by catalytic reaction of P-related gases in Cat-CVD apparatus. Degradation of c-Si quality by heating process, which limits the efficiency of c-Si solar cells, can be avoided by this low temperature doping process. All these facts encourage us to use Cat-CVD technology for fabrication of high efficiency c-Si solar cells.
  • 大平 圭介
    2012 年 55 巻 12 号 p. 535-540
    発行日: 2012年
    公開日: 2012/12/28
    ジャーナル フリー
      Flash lamp annealing (FLA) is a promising technique to form polycrystalline silicon (poly-Si) films for solar cells, because of its ms-order proper annealing duration which enables to sufficiently heat μm-order-thick a-Si films without inducing thermal damage onto whole glass substrates. The flash-lamp-induced crystallization of amorphous Si (a-Si) takes place laterally triggered by the release of latent heat, generally referred to as explosive crystallization (EC). The rapid lateral crystallization results in the suppression of hydrogen desorption out of Si films and the preservation of original dopant profiles, which are of great advantages to the realization of high-efficiency solar cells. We can obtain poly-Si films both consisting only of μm-order-long large grains and containing 10-nm-sized fine grains, depending on the method of preparing precursor a-Si films. Based on the results of multi-pulse FLA experiment, this can be explained as the emergence of different EC modes.
  • 山本 暠勇, ブイヤン アシュラフル G.
    2012 年 55 巻 12 号 p. 541-547
    発行日: 2012年
    公開日: 2012/12/28
    ジャーナル フリー
      The revision of InN bandgap to a much narrower value (≈0.7 eV) has opened the new research on InN-based solar cell. For InN-based materials, multi-junction solar cell seems to be the most promising approach, because a wanted bandgap between 0.6 and 2.5 eV can be obtained by using the alloy materials. Many groups have reported homojunction-type or sandwich-type InGaN solar cells. The maximum In content in InGaN absorption layers employed is around 0.3 (Eg≈2.3 eV). The low In content is the main reason for the poor performance of the present single-junction devices under the solar irradiance. To realize a high efficiency multi-junction cell, many issues, especially, the growth of high quality alloy films with an In content of 0.4-1 and the control of p-type doping, should be solved.
  • 片桐 裕則
    2012 年 55 巻 12 号 p. 548-555
    発行日: 2012年
    公開日: 2012/12/28
    ジャーナル フリー
      Cu2ZnSnS4 (CZTS) is one of the promising materials for low cost thin film solar cells, because of suitable band gap energy around 1.5 eV, and the large absorption coefficient over 104 cm−1. All constituents of this film are abundant on the crust of the earth, and they are not toxic. In 1996, we reported a fabrication process of CZTS films by sulfurization of EB evaporated precursors. We formed a new type of thin film solar cells having the structure of SLG/Mo/CZTS/CdS/ZnO: Al/Al and achieved the conversion efficiency of 0.66% for the first time. Recently, using CZTS compound target, we achieved over 6.4% efficiency with CZTS films prepared by the single sputtering followed by sulfurization. In this article, the development of CZTS-based thin film solar cells will be reviewed.
  • 岡田 至崇
    2012 年 55 巻 12 号 p. 556-561
    発行日: 2012年
    公開日: 2012/12/28
    ジャーナル フリー
      In order to surpass the theoretical Shockley-Queisser limit of energy conversion efficiency of a single-junction solar cell, advanced concepts using multi-junction tandem structures and quantum nanostructures are presently under intense research. Recent developments and future research opportunities with quantum nanostructure photovoltaics are reviewed.
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