We have researched to fabricate Cu wiring for ULSI using high-vacuum sputtering. Cu filling was examined for a trench width of 90 nm and aspect ratio of 5 with Co barrier layer. When we used 1 mol%N₂-Ar sputtering gas, complete Cu filling was accomplished. The reasons for complete Cu filling are discussed by capillary theory from the viewpoint of Cu wettability on Co layer.

抄録全体を表示

  Approximately 400 nm-thick transparent conducting oxide thin films have been deposited on glass substrates by irradiating the pulsed laser beam of an Nd:YAG laser (FHG of λ=266 nm, laser energy of 20 mJ) on the split target composed of Al-doped zinc oxide (AZO:1.5 wt% Al₂O₃:) and SiO₂ (99.999% purity). During the deposition process, oxygen with partial pressure of 0.4∼0.5 Pa was introduced in the chamber. As a result, the lowest resistivity of 2.84×10⁻⁴ Ω•cm (mobility μ=12.7 cm²/Vs, carrier concentration n=1.71×10²¹ cm⁻³) was obtained. Then in order to improve electrical properties, the films were annealed by irradiating the pulsed laser beam of an Nd:YAG laser (FHG of λ=266 nm, laser energy density of 16 mJ/cm²) for three minutes. As a result, the lowest resistivity of 1.86×10⁻⁴ Ω•cm (mobility μ=13.6 cm²/Vs, carrier concentration n=2.47×10²¹ cm⁻³) was obtained. Consequently, the resistivity-reduction of 35% was recognized.

抄録全体を表示

  Approximately 400∼600 nm-thick athermanous reflection films (transparent for visible wavelength, reflective for infrared wavelength) have been deposited on glass substrate by radio-frequency magnetron sputtering method using Ga-doped zinc oxide (GZO: 5 wt.%Ga₂O₃) target. The deposition cell was initially evacuated to ∼10⁻⁴ Pa and then, films deposition was performed at argon partial pressure of 0.1 Pa, substrate temperature of 300℃ and high-frequency power of 220 W. As a result, an average transmittance of 89.1% in the visible region (the wavelength of 400∼700 nm) was obtained for 542 nm-thick film. On the other hand, the values of reflection were 40.7%, 67.5% and 74.5% for the wavelength regions of 1500∼2000 nm, 2000∼2500 nm and 2500∼3000 nm, respectively. From these results, it may well be that athermanous reflection films are obtained.

抄録全体を表示

  Approximately 500 nm-thick transparent conducting films applicable to the whole solar spectrum have been prepared on flexible cyclo-orephin polymer (COP) substrates by irradiating the pulsed laserbeam of an ArF excimer laser (λ=193 nm, laser energy of 80 mJ, repetition rate of 10 Hz) on the titanium-doped zinc oxide (TZO : 1 wt.% Ti₂O₃) target. The deposition cell was initially evacuated to ∼10⁻⁴ Pa and then, film deposition was performed at oxygen partial pressure of 0.5 Pa, oxygen flow rate of 15 sccm and substrate temperature of 150℃. As a result, the lowest resistivity of 2.9×10⁻⁴ Ω•cm（μ=42 cm²/V•s, n=5.2×10²⁰ cm⁻³) and sheet resistance of 5.7 Ω/sq were obtained. The values of average transmittance spectra were 84% in the visible wavelength region (400-700 nm) and 79% in the whole solar spectra (400-1500 nm), respectively.

抄録全体を表示

  The surface analysis techniques such as Auger Electron Spectroscopy, X-ray Photoelectron Spectroscopy, and Secondary Ion Mass Spectrometry are now widely used in many industries, and it becomes important to know the basic concept of these techniques for scientists and engineers. When electron, X-ray, or ion is irradiated on solid surfaces, electron, X-ray, or ion is generated, or is reflected by the interactions with solid surfaces. Surface analysis is the technique that detects these signals, and deduces the surface properties of solids by analyzing detected signals. The objective of this lecture is to introduce the basis of surface analysis techniques. In this lecture, the interactions between probes (electron, X-ray, or ion) and solids will be briefly introduced, and then the way to utilize these interactions as surface analysis techniques will be explained.

抄録全体を表示