Journal of the Vacuum Society of Japan
Online ISSN : 1882-4749
Print ISSN : 1882-2398
ISSN-L : 1882-2398
57 巻 , 5 号
選択された号の論文の9件中1~9を表示しています
小特集「第54回真空に関する連合講演会論文集 (2)」
研究論文
  • 盛谷 浩右, 持地 広造, 乾 徳夫, 豊田 紀章, 山田 公
    2014 年 57 巻 5 号 p. 173-178
    発行日: 2014年
    公開日: 2014/05/23
    ジャーナル フリー
      A size-selected Ar gas cluster ion beam (GCIB) was applied to secondary ion mass spectrometry (SIMS) of a polystyrene (PS) thin film, a 1,4-didodecylbenzene (DDB) thin film, and an ITO glass sample. Additionally, the samples were analyzed by SIMS using an atomic Ar+ ion projectile and X-ray photoelectron spectroscopy (XPS). All three samples were contaminated by poly(dimethylsiloxane) (PDMS) on the surface. Compared to the Ar+ SIMS spectra, the fragments in the PS and DDB SIMS spectra for Ar1550+, including siloxane, were enhanced more than ∼100-fold, while the hydrocarbon fragments were enhanced 10-20-fold. XPS spectra during beam irradiation indicate that Ar-GCIB sputters contaminants on the surface more effectively than the atomic Ar+ ion beam. These results indicate that a large gas cluster projectile can sputter a much shallower volume of organic material than small projectiles, resulting in an extremely surface-sensitive analysis of organic thin films. The shallow volume sputtering by GCIB is responsible for the preferential enhancement of the surface contaminants.
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  • 鈴木 亜嵐, 小林 清輝
    2014 年 57 巻 5 号 p. 197-199
    発行日: 2014年
    公開日: 2014/05/23
    ジャーナル フリー
      We investigated the influence of the work function of metal gate electrodes on the current component induced by exposing silicon nitride-silicon oxide double-layer films to high-energy ultraviolet (UV) illumination. Prior to UV exposure, the conduction current under negative gate bias through an aluminum-nitride-oxide-silicon structure was larger than that through a mercury-nitride-oxide-silicon structure. In these structures under negative gate bias, it has been considered that electrons injected from the metal electrodes into the nitride films dominate the conduction current. Hence, the experimental result can be explained by the notion that the probability of electron injection into the nitride film from the aluminum electrode is higher than that from the mercury electrode because of the difference of the work function between the two kinds of metals. After UV exposure, the conduction current under negative gate bias through both the structures were almost identical to each other. This result reveals that the current component after exposure to UV illumination is dominated by charge carriers generated in the bulk of the nitride film.
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