We fabricated Ni films on an Acrylonitrile-Butadiene-Styrene resin (ABS) using unbalanced magnetron sputtering assisted by inductively coupled plasma. The effect of ion irradiation controlled by target DC power
PT and magnetic flux density toward the substrate
BC on the Ni film structures was investigated. Argon ion emission intensity
IArII near the substrate increased with
PT and
BC. In addition, substrate current
IS drastically decreased above
PT=500 W. We observed that ion irradiation was enhanced by increasing
BC above
PT=500 W. From x-ray diffraction measurement, the crystallite size
t(111) increased with the effect of ion irradiation. A minimum film resistivity of 1.4×10
−5 Ωcm was measured for
PT=600 W and
BC=5 mT. We conclude that controlling the effect of ion irradiation is effective for high quality Ni film formation on ABS.
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