The dissolution characteristics of a chemically amplified resist composed of partially protected poly (
p-vinyl phenol) (PVP) by
t-butoxycarbonyl group (
tBOC), a dissolution inhibitor and an acid generator, were investigated. We tried to decrease the dissolution rate of the resist in the unexposed area by the use of dissolution inhibitors. The dissolution rate was estimated by using a model-composition resist which consists of
tBOC-PVP as matrix resin and
t-butyl carboxyl ester as dissolution inhibitors. The relationship between the molecular weight of
t-butyl carboxyl ester and the dissolution rate of model-composition resist was evaluated. The higher the molecular weight of
t-butyl carboxyl ester, the lower the dissolution rate of model-composition resist. IR spectra showed that the higher the molecular weight of
t-butyl carboxyl ester, the less the decomposition rate of the
tBu group of the dissolution inhibitors at prebake. It is thought that the polymer hardness became softer by adding a dissolution inhibitor with a low molecular weight. It was found that a dissolution inhbitor with a high molecular weight decreases the dissolution rate of a resist in the unexposed area. The resist which consists of
tBOC-PVP, 2, 2′-dithiosalicylic acid protected by
t-butyl group and an acid generator exhibited 0.12μm L & S patterns using 80μC/cm
2 EB with 50 keV acceleration voltage.
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