The Review of Laser Engineering
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
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Volume 16, Issue 8
Displaying 1-9 of 9 articles from this issue
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  • [title in Japanese]
    Mitsugu HANABUSA
    1988 Volume 16 Issue 8 Pages 446-447
    Published: August 28, 1988
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.16.446
    JOURNAL FREE ACCESS
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  • Laser Processing (Welding, Cutting and Drilling)
    Shuichi ISHIDA
    1988 Volume 16 Issue 8 Pages 448-455
    Published: August 28, 1988
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.16.448
    JOURNAL FREE ACCESS
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    Since the first demonstration of drilling with a ruby laser, laser processings, such as welding, cutting and drilling have been used in industrial manufacturing. In these applications, laser light is focused on a small spot on the surface where the laser energy is converted to thermal energy, instantly resulting phase changes, melting and vaporization. This paper reviews some fundamental studies and new techniques of laser processing. Fundamental studies include the interaction of laser beams with materials and the beam hole formation.
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  • Micro-Machining Using Nd: YAG Lasers
    Kunihiko WASHIO
    1988 Volume 16 Issue 8 Pages 456-465
    Published: August 28, 1988
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.16.456
    JOURNAL FREE ACCESS
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    This paper reviews recent progress in the micro-machining using Nd: YAG lasers. The merits and features of Nd: YAG lasers for materials micro-machining are briefly presented. The state of the arts of various kinds of micro-machining, such as scanning-spot marking, interconnections direct-writing, electronic components spot welding, and flat-packaged IC soldering are described. Nd: YAG lasers are ideal light sources since they can emit light pulses covering wide ranges in the output power and pulse duration, thus enabling us to use various mechanisms for micromachining.
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  • Laser Surface Modification
    Akira MATSUNAWA
    1988 Volume 16 Issue 8 Pages 466-475
    Published: August 28, 1988
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.16.466
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    There are various proposed methods and purposes of laser surface modification, and intensive researches and developments are now conducted worldwide. They can be classified into two basic types. One is to change the physical and chemical properties of bulk surface and its vicinity, and the other is to give a film or layer having special functions onto the surface. Both will be achieved by the physical and chemical processes based on different mechanisms. In this paper will be only described on the laser surface modification of metal associated by the rapid cooling or solidification processes in which metastable structures having special properties are effectively formed.
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  • Laser Etching
    Masataka HIROSE
    1988 Volume 16 Issue 8 Pages 476-485
    Published: August 28, 1988
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.16.476
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    Si, Ga As and Al surfaces exposed to etching gases under Ar F excimer-laser (193nm) irradiation have been studied by in situ x-ray photoelectron spectroscopy (XPS). The kinetics of photochemical etching and the resulting products on the solid surfaces have been revealed from the chemical shifts of adsorbates and substrate atoms. The etch products are shown to be Si Fx (x=∼4) units and molecular fluorine in Si etching in NF3, GaCl3 and AsCl3 in Ga As etching in HCl, and Al Clx (x=2, 3) in an Al/BCl3 system. The valence band spectra of etched Si surface indicate a systematic shift of the band edge to form a surface depletion layers, which is caused by the photogenerated majority carriers trapped in the semiinsulating fluorosilyl surface layer. By controlling the surface chemistry, pattern projection etching and CVD have been achieved.
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  • Laser CVD
    Yoshinobu AOYAGI
    1988 Volume 16 Issue 8 Pages 486-497
    Published: August 28, 1988
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.16.486
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    After development of an excimer laser, laser CVD is greatly progressed for several materials such as Si, III-V, II-VI compounds, diamond, and dielectric materials, especially on the point of application to high quality deposition at low temperature, patterned crystal growth, and development of new materials. However, the mechanism of laser CVD has not yet been clarified in many materials. In this paper laser epitaxy of GaAs is reviewed and the characteristics of the laser epitaxy and the growth mechanism are discussed.
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  • Laser Doping
    Satoru MATSUMOTO
    1988 Volume 16 Issue 8 Pages 498-506
    Published: August 28, 1988
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.16.498
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    Doping processes into semiconductors by excimer and Ar ion lasers are reviewed. Doping characteristics and mechanism inherently depend on the choice of laser and doping gas. Characteristics of two kinds of doping, doping from photochemical decomposition of gas and doping from adsorbed layers, are described. Calculation of doping profiles is performed with the involvement of melt depth and impurity diffusion.
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  • Excimer Laser Lithography
    Kazufumi OGAWA, Masaru SASAGO, Masayuki ENDO, Hideo NAKAGAWA, Yoshiyuk ...
    1988 Volume 16 Issue 8 Pages 507-517
    Published: August 28, 1988
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.16.507
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    An excimer laser stepper operating at 248.4nm was developed for use in0.5μm pattern fabrication.
    The stepper consists of a monochromatic fused silica lens and a new compact KrF excimer laser, whose oscillation spectrum has been line-narrowed (FWHM, 0.007nm). The5x projection lens has a field size of15×15mm2and the numerical aperture (NA) of 0.36. The use of this apparatus permits a pattern exposure of 0.5μm features without speckle; the resolution of 0.4μm line and space patterns was obtained by using a commercially available deep UV resist. A high throughput, equivalent to that of a conventional stepper, is also obtained.
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  • Laser Plasma X-Ray Source and its Application to Lithography
    Sadao NAKAI, Masahiro NAKATSUKA, Masao TAKAHASHI
    1988 Volume 16 Issue 8 Pages 518-526
    Published: August 28, 1988
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.16.518
    JOURNAL FREE ACCESS
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    The X-ray source by laser produced plasma is becoming an effective tool in advanced technology such as X-ray lithography, X-ray microscopy and X-ray processing of materials. The features of LPXS (Laser Plasma X-ray Source) are (1) high conversion efficiency from laser, (2) high brightness, (3) small spot source, (4) soft X-ray region from sub-keV to keV, and (5) short pulse source. The experimental results on LPXS and it application to X-ray lithography are reviewed.
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