Resistless microfabrication of metallization of n-type GaAs formed by projection patterned doping using a KrF excimer laser is described. Silane (SiH
4) gas is used as a source material of the ntype dopant of GaAs. Copper thin films with a linewidth as narrow as 2.35 μm are deposited selectively on the doped region by electroplating using an aqueous CuSO
4 solution. By using the selective metallization process, nonalloyed ohmic contacts can be formed with a specific contact resistance of 2.32X10
-5 Ωcm
2, which is one-thirtieth of that of conventional alloyed contacts.
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