The Review of Laser Engineering
Online ISSN : 1349-6603
Print ISSN : 0387-0200
ISSN-L : 0387-0200
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Volume 23, Issue 7
Displaying 1-13 of 13 articles from this issue
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  • [title in Japanese]
    Kimizo ONO
    1995 Volume 23 Issue 7 Pages 477-478
    Published: August 07, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.477
    JOURNAL FREE ACCESS
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  • Perspective of Semiconductor Lasers: Semiconductor Lasers with Nanostructures and Microcavity
    Yasuhiko ARAKAWA
    1995 Volume 23 Issue 7 Pages 479-486
    Published: August 07, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.479
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    One of main goals is to manipulate both electrons and photons in nanostructures and microcavities. Towards this goal, it is important to develop nanofabrication and nano-scale optical characterization techniques as well as to understand the physics of electron-photon interaction in the nano-structures. In this paper, we discuss recent progress and perspective of semiconductor lasers with nanostructures and microcavities, including fabrication of quantum wires and boxes, theoretical discussion of phonon bottleneck, fabrication of microcavity quantum wire lasers, and exciton/polariton strong interaction in the microcavities.
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  • Research Trends and Prospects of Blue and Ultraviolet Laser Diodes
    Katsumi KISHINO
    1995 Volume 23 Issue 7 Pages 487-496
    Published: August 07, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.487
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    Research trends and prospects of blue and ultraviolet range semiconductor lasers are described. The laser materials are ZnCdSe/MgZnSSe II-VI and InGaN/AlGaN III-V double heterostructure systems. In the ZnCdSe/MgZnSSe lasers, we are faced with problems in lengthening the lifetime, shortening the wavelength and lowering the operation voltage. For a long room temperature cw lifetime, it is necessary to decrease the defect density level to be lower than 104 cm-2. Around 510 nm in wavelength, high-performance lasers were fabricated, but developing 450 nm wavelength lasers is expected. The basic condition for realizing the lasing operation of InGaN/AlGaN injection lasers is going to be prepared, in which lasers the lasing wavelength from 370 nm to 450 nm can be expected. Therefore, in future there will be a conflict between them in the blue emitting region.
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  • Low Threshold Current and High Temperature Operation of Vertical Cavity Surface Emitting Lasers
    Hiroshi ISHIKAWA
    1995 Volume 23 Issue 7 Pages 497-505
    Published: August 07, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.497
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    Recent progress in vertical cavity surface emitting lasers has been reviewed. Remarkable progress has been made in the 0.8-1.0 μm short wavelength lasers. Threshold current below 100 μA and high temperature operation up to 200° are reported. On the contrary, the performances of lasers in the wavelength range of 1.3-1.6 μm are quite inferior to those of short wavelength lasers. As causes of this difference, the mirror reflectivity and the gain characteristics of quantum wells are discussed. Trials to get high reflectivity at long wavelength range, and an example of a design of high performance 1.3 μm laser are reviewed.
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  • Semiconductor Laser on Si Substrate Using Heteroepitaxial Growth Technique
    Yoshiaki HASEGAWA, Takashi EGAWA, Takashi JIMBO, Masayoshi UMENO
    1995 Volume 23 Issue 7 Pages 506-514
    Published: August 07, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.506
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    Light emitting devices grown by heteroepitaxial growth technique such as GaN/Al203, ZnSe/GaAs and GaAs/Si have a serious problem of reliability because of their high dislocation density. For example, GaAs-based light emitting diode (LED) and laser grown on Si substrates suffer from rapid degradation because of a high dislocation density (> 106 cm-2) and a large residual thermal stress (-109 dyn/cm2), which are introduced by the -4% lattice mismatch and the -250 % difference in the thermal expansion coefficients between GaAs and Si. If the sizes of active regions in these devices are drastically reduced, the reliability can be remarkably improved due to low dislocation numbers. From this point of view, we demonstrated A1GaAs/GaAs vertical cavity surface emitting laser (VCSEL), quantum wire-like laser and LED with self-assembled GaAs dots active region on Si. This novel technique is very promising for the improvement of reliability of light emitting devices with high dislocation density grown by heteroepitaxy.
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  • Intersubband Transition Lasers
    Yuzo YOSHIKUNI, Masaya NOTOMI, Hiromitsu ASAI
    1995 Volume 23 Issue 7 Pages 515-521
    Published: August 07, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.515
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    This paper reviews recent activity in research of quantum well intersubband transition lasers. The intersubband transition has a unique physical aspects as a transition between artificially created levels and has been attracting many researcher's interest. Recent success of the lasing by the quantum well intersubband transition implies a large potential of the device as a new type of semiconductor lasers.
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  • DFB Laser Diodes for Analog Transmission
    Hitoshi WATANABE, Tohru TAKIGUCHI, Etsuji OMURA
    1995 Volume 23 Issue 7 Pages 522-530
    Published: August 07, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.522
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    DFB laser diodes (LD) have been expected to be attractive light sources for analog transmission, because they have low noise characteristics in radio frequency. However, the early DFB-LD was difficult to apply to practical use because of their large modulation distortion. Main factors of the modulation distortion include 1) intrinsic nonlinear response, 2) spatial hole burning (SHB), and 3) leakage current. This paper reviews technologies of analog DFBLDs focused on the modulation distortion and a device structure to reduce them. CATV system is the most successful analog application for DFB-LDs. In addition, recent progress has been expanding new applications such as a microcellular radio communication. Here, the performance of DFB-LDs for those systems is shown. Furthermore, future trends of analog transmission and what the future analog application requires of DFB-LDs are also described.
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  • High Power Semiconductor Lasers for Optical Fiber Amplifiers
    Akihiko KASUKAWA, Michio OHKUBO, Yoshikazu IKEGAMI, Naoki TSUKIJI, Mas ...
    1995 Volume 23 Issue 7 Pages 531-540
    Published: August 07, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.531
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    We review the state-of-the-art high power semiconductor lasers emitting at 0.98 and 1.48 μm, which are used for the pumping sources of the Er-doped fiber amplifiers. The introduction of strained-layer quantum wells to the active layer, together with graded-indexseparate-confinement-heterostructure enables us to improve the output power of semiconductor lasers. As a result, Er-doped fiber amplifiers with high signal output power are commercially available.
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  • High Power Laser Diode Arrays for Pumping Solid State Laser
    Development of 2-D High Power LD Arrays
    Hirofumi KAN, Takeshi KANZAKI, Hirofumi MIYAJIMA, Yukihiro ITO, Teruo ...
    1995 Volume 23 Issue 7 Pages 541-551
    Published: August 07, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.541
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    High Power Laser Diode (LD) Arrays is important for pumping Solid State Laser as it's compact size, high efficiency, and long life characteristics.
    We have developed 0.8 μm band High Power LD Arrays and evaluated their characteristics. LD Arrays are composed 1 cm LD bars. As 4stack LD, it is obtained 260 W peak power (pulse width 200 μs, duty 0.4 %, current 100 A).
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  • Report on CLEO/QELS'95 I
    Coherent Light Sources, Lasers for Fusion and Strong Field Physics, Optical Interactions with Condensed Matter, and Nonlinear Optical Phenomena
    Hiroyuki DAIDO, Takahisa JITSUNO, Hajime NISHIOKA, Nobuhiko SARUKURA, ...
    1995 Volume 23 Issue 7 Pages 552-569
    Published: August 07, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.552
    JOURNAL FREE ACCESS
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  • Report on CLEO/QELS'95 II
    Solid-State, Gas, Dye, and Free Electron Lasers, Nonlinear Optics, Phase Conjugation, Laser Spectroscopy, and Atomic Physics
    Minoru DOSHIDA, Jun SAKUMA, Satoshi WADA, Hidetsugu YOSHIDA, Haruhiko ...
    1995 Volume 23 Issue 7 Pages 570-587
    Published: August 07, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.570
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  • Report on CLEO/QELS'95 III
    Semiconductor Laser, Optical Swittching, Processing and Storage Systems, Photodetectors and EO Technologies, Fiber Lasers, and Lightwave Communications
    Toshikazu MUKAIHARA, Yasuo SHIBATA, Kazuhiko SHIMOMURA, Genji TOHMON, ...
    1995 Volume 23 Issue 7 Pages 588-601
    Published: August 07, 1995
    Released on J-STAGE: July 30, 2010
    DOIhttps://doi.org/10.2184/lsj.23.588
    JOURNAL FREE ACCESS
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  • Report on CLEO/QELS'95 IV
    Optical Materials and Fabrication, Atmospheric, Space, and Ocean Optics, Diagnostic, Analytical, and Industrial Applications, Medical and Biological Applications
    Richard SAHARA, Hirohiko YASUDA, Tatsuo OKADA, Kin Pui CHAN
    1995 Volume 23 Issue 7 Pages 602-612
    Published: August 07, 1995
    Released on J-STAGE: February 26, 2010
    DOIhttps://doi.org/10.2184/lsj.23.602
    JOURNAL FREE ACCESS
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