巻号一覧
23 巻, 7 号
選択された号の論文の13件中1～13を表示しています
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小野 公三1995 年 23 巻 7 号 p. 477-478
発行日: 1995/08/07
公開日: 2010/02/26
ジャーナル フリーPDF形式でダウンロード (158K) -
ナノ構造と微小共振器を有するレーザー荒川 泰彦1995 年 23 巻 7 号 p. 479-486
発行日: 1995/08/07
公開日: 2010/02/26
ジャーナル フリーOne of main goals is to manipulate both electrons and photons in nanostructures and microcavities. Towards this goal, it is important to develop nanofabrication and nano-scale optical characterization techniques as well as to understand the physics of electron-photon interaction in the nano-structures. In this paper, we discuss recent progress and perspective of semiconductor lasers with nanostructures and microcavities, including fabrication of quantum wires and boxes, theoretical discussion of phonon bottleneck, fabrication of microcavity quantum wire lasers, and exciton/polariton strong interaction in the microcavities.抄録全体を表示PDF形式でダウンロード (1673K) -
岸野 克巳1995 年 23 巻 7 号 p. 487-496
発行日: 1995/08/07
公開日: 2010/02/26
ジャーナル フリーResearch trends and prospects of blue and ultraviolet range semiconductor lasers are described. The laser materials are ZnCdSe/MgZnSSe II-VI and InGaN/AlGaN III-V double heterostructure systems. In the ZnCdSe/MgZnSSe lasers, we are faced with problems in lengthening the lifetime, shortening the wavelength and lowering the operation voltage. For a long room temperature cw lifetime, it is necessary to decrease the defect density level to be lower than 104 cm-2. Around 510 nm in wavelength, high-performance lasers were fabricated, but developing 450 nm wavelength lasers is expected. The basic condition for realizing the lasing operation of InGaN/AlGaN injection lasers is going to be prepared, in which lasers the lasing wavelength from 370 nm to 450 nm can be expected. Therefore, in future there will be a conflict between them in the blue emitting region.抄録全体を表示PDF形式でダウンロード (1274K) -
石川 浩1995 年 23 巻 7 号 p. 497-505
発行日: 1995/08/07
公開日: 2010/02/26
ジャーナル フリーRecent progress in vertical cavity surface emitting lasers has been reviewed. Remarkable progress has been made in the 0.8-1.0 μm short wavelength lasers. Threshold current below 100 μA and high temperature operation up to 200° are reported. On the contrary, the performances of lasers in the wavelength range of 1.3-1.6 μm are quite inferior to those of short wavelength lasers. As causes of this difference, the mirror reflectivity and the gain characteristics of quantum wells are discussed. Trials to get high reflectivity at long wavelength range, and an example of a design of high performance 1.3 μm laser are reviewed.抄録全体を表示PDF形式でダウンロード (1011K) -
長谷川 義晃, 江川 孝志, 神保 孝志, 梅野 正義1995 年 23 巻 7 号 p. 506-514
発行日: 1995/08/07
公開日: 2010/02/26
ジャーナル フリーLight emitting devices grown by heteroepitaxial growth technique such as GaN/Al203, ZnSe/GaAs and GaAs/Si have a serious problem of reliability because of their high dislocation density. For example, GaAs-based light emitting diode (LED) and laser grown on Si substrates suffer from rapid degradation because of a high dislocation density (> 106 cm-2) and a large residual thermal stress (-109 dyn/cm2), which are introduced by the -4% lattice mismatch and the -250 % difference in the thermal expansion coefficients between GaAs and Si. If the sizes of active regions in these devices are drastically reduced, the reliability can be remarkably improved due to low dislocation numbers. From this point of view, we demonstrated A1GaAs/GaAs vertical cavity surface emitting laser (VCSEL), quantum wire-like laser and LED with self-assembled GaAs dots active region on Si. This novel technique is very promising for the improvement of reliability of light emitting devices with high dislocation density grown by heteroepitaxy.抄録全体を表示PDF形式でダウンロード (1840K) -
吉國 裕三, 納富 雅也, 浅井 裕充1995 年 23 巻 7 号 p. 515-521
発行日: 1995/08/07
公開日: 2010/02/26
ジャーナル フリーThis paper reviews recent activity in research of quantum well intersubband transition lasers. The intersubband transition has a unique physical aspects as a transition between artificially created levels and has been attracting many researcher's interest. Recent success of the lasing by the quantum well intersubband transition implies a large potential of the device as a new type of semiconductor lasers.抄録全体を表示PDF形式でダウンロード (836K) -
渡辺 斉, 瀧口 透, 大村 悦司1995 年 23 巻 7 号 p. 522-530
発行日: 1995/08/07
公開日: 2010/02/26
ジャーナル フリーDFB laser diodes (LD) have been expected to be attractive light sources for analog transmission, because they have low noise characteristics in radio frequency. However, the early DFB-LD was difficult to apply to practical use because of their large modulation distortion. Main factors of the modulation distortion include 1) intrinsic nonlinear response, 2) spatial hole burning (SHB), and 3) leakage current. This paper reviews technologies of analog DFBLDs focused on the modulation distortion and a device structure to reduce them. CATV system is the most successful analog application for DFB-LDs. In addition, recent progress has been expanding new applications such as a microcellular radio communication. Here, the performance of DFB-LDs for those systems is shown. Furthermore, future trends of analog transmission and what the future analog application requires of DFB-LDs are also described.抄録全体を表示PDF形式でダウンロード (1373K) -
粕川 秋彦, 大久保 典雄, 池上 嘉一, 築地 直樹, 関 政義1995 年 23 巻 7 号 p. 531-540
発行日: 1995/08/07
公開日: 2010/02/26
ジャーナル フリーWe review the state-of-the-art high power semiconductor lasers emitting at 0.98 and 1.48 μm, which are used for the pumping sources of the Er-doped fiber amplifiers. The introduction of strained-layer quantum wells to the active layer, together with graded-indexseparate-confinement-heterostructure enables us to improve the output power of semiconductor lasers. As a result, Er-doped fiber amplifiers with high signal output power are commercially available.抄録全体を表示PDF形式でダウンロード (1584K) -
二次元高出力半導体レーザーアレイの開発菅 博文, 神崎 武司, 宮島 博文, 伊藤 之弘, 晝馬 輝夫, 山中 正宣, 近江 雅人, 桐山 博光, 中井 貞雄1995 年 23 巻 7 号 p. 541-551
発行日: 1995/08/07
公開日: 2010/02/26
ジャーナル フリーHigh Power Laser Diode (LD) Arrays is important for pumping Solid State Laser as it's compact size, high efficiency, and long life characteristics.
We have developed 0.8 μm band High Power LD Arrays and evaluated their characteristics. LD Arrays are composed 1 cm LD bars. As 4stack LD, it is obtained 260 W peak power (pulse width 200 μs, duty 0.4 %, current 100 A).抄録全体を表示PDF形式でダウンロード (1316K) -
コヒーレント光源, レーザー核融合と高強度物理, 凝縮系との相互作用, 非線形光学現象大道 博行, 實野 孝久, 西岡 一, 猿倉 信彦, 石原 一1995 年 23 巻 7 号 p. 552-569
発行日: 1995/08/07
公開日: 2010/02/26
ジャーナル フリーPDF形式でダウンロード (2443K) -
固体・ガス・色素・自由電子レーザー, 非線形光学, 位相共役, レーザー分光・原子物理土志田 実, 佐久間 純, 和田 智之, 吉田 英次, 伊藤 治彦1995 年 23 巻 7 号 p. 570-587
発行日: 1995/08/07
公開日: 2010/02/26
ジャーナル フリーPDF形式でダウンロード (2380K) -
半導体レーザー, 光スイッチ, 演算・記憶システム, 光検出器とEO技術, ファイバーレーザー, 光通信向原 智一, 柴田 泰夫, 下村 和彦, 東門 元二, 森 邦彦1995 年 23 巻 7 号 p. 588-601
発行日: 1995/08/07
公開日: 2010/07/30
ジャーナル フリーPDF形式でダウンロード (1623K) -
光学材料と加工, 大気・宇宙・海洋光学, 計測・分析・産業応用, 医学・生物応用佐原 リチャード, 安田 裕彦, 岡田 龍雄, 陳 建培1995 年 23 巻 7 号 p. 602-612
発行日: 1995/08/07
公開日: 2010/02/26
ジャーナル フリーPDF形式でダウンロード (1674K)
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