In order to manipulate silicon atoms through laser cooling, it is necessary to detune precisely to the resonant frequency of the 3
3P
1→4
3P
o0 transition of silicon atoms at 252.41 nm, 28.8 MHz of the natural linewidth and 35.4 mW/cm
2 of the saturation intensity. In this study, we demonstrated the optogalvanic spectroscopy for silicon atoms with two types of nano-second frequency tripled Ti:sapphire lasers.
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