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Volume 34, Issue 10
Displaying 1-7 of 7 articles from this issue
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Kunihiko WASHIO2006 Volume 34 Issue 10 Pages 678
Published: October 15, 2006
Released on J-STAGE: March 26, 2014
JOURNAL FREE ACCESSDownload PDF (174K) -
Kazufumi AZUMA, Masato HIRAMATSU, Masakiyo MATSUMURA2006 Volume 34 Issue 10 Pages 679-683
Published: October 15, 2006
Released on J-STAGE: March 26, 2014
JOURNAL FREE ACCESSThin film transistor, which had been in practical use with amorphous silicon (a-Si) as base material in 80's, blossomed into poly-Si TFTs by a driving force of the Excimer Laser re-crystallization technology. The feature of the Excimer laser fits for the lateral growth of Si thin films, i.e., its characteristics such as short wavelength, high power density, low coherency and short pulse enable the progress of the advanced “Phase Modulated Excimer Laser Annealing (PMELA)” method. We have developed a position-controlled large grain Si arrays process using the PMELA method. Excimer laser still requires many refinement to achieve the practical use of the “System displays” .View full abstractDownload PDF (8718K) -
Tanemasa ASANO, Gou NAKAGAWA2006 Volume 34 Issue 10 Pages 684-688
Published: October 15, 2006
Released on J-STAGE: March 26, 2014
JOURNAL FREE ACCESSA novel technique of location and orientation control of Si crystal grain by combining metal-induced solidphase annealing and excimer laser annealing (ELA) is demonstrated. Two solid-phase annealing processes were investigated.(1) Metal (Ni) nano-imprint at the a-Si film surface is used for the purpose of creating {111} oriented Si crystal nuclei which act as the seed for the subsequent crystallization using ELA. The annealing to form nuclei at the imprinted sites was carried out at temperatures below 450 °C. ELA using XeCl laser of the sample resulted in the formation of 2.5 μm-sized Si grains at the imprinted sites, while {111} orientation was not observed.(2) The starting a-Si film is deposited on SiO2 substrate having cone-shaped shallow pits. Ni-metal induced lateral crystallization (Ni-MILC) is used to form highly {110} oriented polySi. After XeCl-laser-based ELA, 2.5 μm-sized Si grains having the same orientation as that determined by NiMILC were produced at the pit sites. It suggests that location and orientation control is possible by combining MILC and ELA.View full abstractDownload PDF (11694K) -
M.Shane BOWEN, David S. KNOWLES2006 Volume 34 Issue 10 Pages 689-692
Published: October 15, 2006
Released on J-STAGE: March 26, 2014
JOURNAL FREE ACCESSThis paper provides a review of Thin Beam Directional 'Xtallization (TDX) technology and presents the most recent experimental results illustrating the versatility of thin beam based LTPS processes. As the TDX process moves toward full production, these results confirm the viability of using a thin beam for SLS and for micro-ELA processing as alternative, and complementary, operational modes of the TCZ-900X laser annealing tool.View full abstractDownload PDF (8158K) -
Tatsuki OKAMOTO, Tetsuo KOJIMA, Shinsuke YURA, Atsuhiro SONO, Miki KUR ...2006 Volume 34 Issue 10 Pages 693-697
Published: October 15, 2006
Released on J-STAGE: March 26, 2014
JOURNAL FREE ACCESSLow temperature polycrystalline silicon (LTPS) thin film transistors are necessary for creating high performance liquid crystal displays and organic light emitting diode displays. Excimer lasers have been used as the laser source for this process. However, this method presents two problems: 1) daily maintenance, which includes exchanging the laser gas and cleaning the laser windows, and 2) the limited process window of the optimum laser energy density for obtaining maximum mobility. To overcome these problems, we applied a green laser (second harmonics of a Q-switched Nd: YAG laser) instead of an excimer laser. This paper describes the high power green laser for LTPS, the annealing optical system for green lasers, and the poly-Si crystallization by a green laser.View full abstractDownload PDF (4143K) -
Formation of High-Quality Poly-Si Thin FilmsToshio KUDO, Kazunori YAMAZAKI, Akira TSUNEMI2006 Volume 34 Issue 10 Pages 698-703
Published: October 15, 2006
Released on J-STAGE: March 26, 2014
JOURNAL FREE ACCESSThe advanced lateral crystal growth (ALCG) process developed with the double-pulsed green laser annealing system enabled Si grains to be grown laterally and continuously through a step scan of a line beam in the same way as conventional excimer laser annealing (ELA). The field effect mobility of n-channel ALCG-SiTFTs for a current parallel to grain boundaries reaches a high level of 600 cm2/Vs and the strong temperature dependence of the mobility is close to that of single crystal MOS transistors. The 10μm-wide ultra fine beams up to 75 mm in length for the next generation p-SiTFT and up to 150 mm in length for OLED, applied to massproduction machines, were developed by using the beam delivery optics system in conjunction with the optical technique spatially combining multiple laser beams.View full abstractDownload PDF (7984K) -
Mayumi NAGAYOSHI, Werner KLAUS, Kashiko KODATE2006 Volume 34 Issue 10 Pages 704-711
Published: October 15, 2006
Released on J-STAGE: March 26, 2014
JOURNAL FREE ACCESSIn this study, we focused on a small and light grating that is capable of converting efficiently white light into only the three primary colors red, green and blue. To evaluate its diffraction characteristics properly, we performed a rigorous electromagnetic analysis based on the rigorous coupled wave analysis (RCWA). We designed the grating such that diffraction efficiency higher than 70 % and a color gamut higher than 65 % were obtained. On the basis of our numerical results, we then fabricated a grating by laser drawing and determined its color separation efficiency. The grating was etched into quartz and had a six-level surface relief, a maximum groove depth of 5.75 m, and a period of 50μEm. Furthermore, we calculated the tolerances of fabrication errors in the depth and width directions that satisfy optimal design conditions for establishing guiding principles for the accurate fabrication of multilevel color separation gratings with deep grooves.View full abstractDownload PDF (2866K)
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