巻号一覧
34 巻, 10 号
選択された号の論文の7件中1～7を表示しています
- |<
- <
- 1
- >
- >|
-
鷲尾 邦彦2006 年 34 巻 10 号 p. 678
発行日: 2006/10/15
公開日: 2014/03/26
ジャーナル フリーPDF形式でダウンロード (174K) -
東 和文, 平松 雅人, 松村 正清2006 年 34 巻 10 号 p. 679-683
発行日: 2006/10/15
公開日: 2014/03/26
ジャーナル フリーThin film transistor, which had been in practical use with amorphous silicon (a-Si) as base material in 80's, blossomed into poly-Si TFTs by a driving force of the Excimer Laser re-crystallization technology. The feature of the Excimer laser fits for the lateral growth of Si thin films, i.e., its characteristics such as short wavelength, high power density, low coherency and short pulse enable the progress of the advanced “Phase Modulated Excimer Laser Annealing (PMELA)” method. We have developed a position-controlled large grain Si arrays process using the PMELA method. Excimer laser still requires many refinement to achieve the practical use of the “System displays” .抄録全体を表示PDF形式でダウンロード (8718K) -
浅野 種正, 中川 豪2006 年 34 巻 10 号 p. 684-688
発行日: 2006/10/15
公開日: 2014/03/26
ジャーナル フリーA novel technique of location and orientation control of Si crystal grain by combining metal-induced solidphase annealing and excimer laser annealing (ELA) is demonstrated. Two solid-phase annealing processes were investigated.(1) Metal (Ni) nano-imprint at the a-Si film surface is used for the purpose of creating {111} oriented Si crystal nuclei which act as the seed for the subsequent crystallization using ELA. The annealing to form nuclei at the imprinted sites was carried out at temperatures below 450 °C. ELA using XeCl laser of the sample resulted in the formation of 2.5 μm-sized Si grains at the imprinted sites, while {111} orientation was not observed.(2) The starting a-Si film is deposited on SiO2 substrate having cone-shaped shallow pits. Ni-metal induced lateral crystallization (Ni-MILC) is used to form highly {110} oriented polySi. After XeCl-laser-based ELA, 2.5 μm-sized Si grains having the same orientation as that determined by NiMILC were produced at the pit sites. It suggests that location and orientation control is possible by combining MILC and ELA.抄録全体を表示PDF形式でダウンロード (11694K) -
M.Shane BOWEN, David S. KNOWLES2006 年 34 巻 10 号 p. 689-692
発行日: 2006/10/15
公開日: 2014/03/26
ジャーナル フリーThis paper provides a review of Thin Beam Directional 'Xtallization (TDX) technology and presents the most recent experimental results illustrating the versatility of thin beam based LTPS processes. As the TDX process moves toward full production, these results confirm the viability of using a thin beam for SLS and for micro-ELA processing as alternative, and complementary, operational modes of the TCZ-900X laser annealing tool.抄録全体を表示PDF形式でダウンロード (8158K) -
岡本 達樹, 小島 哲夫, 由良 信介, 園 淳弘, 黒澤 満樹2006 年 34 巻 10 号 p. 693-697
発行日: 2006/10/15
公開日: 2014/03/26
ジャーナル フリーLow temperature polycrystalline silicon (LTPS) thin film transistors are necessary for creating high performance liquid crystal displays and organic light emitting diode displays. Excimer lasers have been used as the laser source for this process. However, this method presents two problems: 1) daily maintenance, which includes exchanging the laser gas and cleaning the laser windows, and 2) the limited process window of the optimum laser energy density for obtaining maximum mobility. To overcome these problems, we applied a green laser (second harmonics of a Q-switched Nd: YAG laser) instead of an excimer laser. This paper describes the high power green laser for LTPS, the annealing optical system for green lasers, and the poly-Si crystallization by a green laser.抄録全体を表示PDF形式でダウンロード (4143K) -
高品質ポリシリコン薄膜形成工藤 利雄, 山崎 和則, 常見 明良2006 年 34 巻 10 号 p. 698-703
発行日: 2006/10/15
公開日: 2014/03/26
ジャーナル フリーThe advanced lateral crystal growth (ALCG) process developed with the double-pulsed green laser annealing system enabled Si grains to be grown laterally and continuously through a step scan of a line beam in the same way as conventional excimer laser annealing (ELA). The field effect mobility of n-channel ALCG-SiTFTs for a current parallel to grain boundaries reaches a high level of 600 cm2/Vs and the strong temperature dependence of the mobility is close to that of single crystal MOS transistors. The 10μm-wide ultra fine beams up to 75 mm in length for the next generation p-SiTFT and up to 150 mm in length for OLED, applied to massproduction machines, were developed by using the beam delivery optics system in conjunction with the optical technique spatially combining multiple laser beams.抄録全体を表示PDF形式でダウンロード (7984K) -
長吉 真弓, Werner KLAUS, 小舘 香椎子2006 年 34 巻 10 号 p. 704-711
発行日: 2006/10/15
公開日: 2014/03/26
ジャーナル フリーIn this study, we focused on a small and light grating that is capable of converting efficiently white light into only the three primary colors red, green and blue. To evaluate its diffraction characteristics properly, we performed a rigorous electromagnetic analysis based on the rigorous coupled wave analysis (RCWA). We designed the grating such that diffraction efficiency higher than 70 % and a color gamut higher than 65 % were obtained. On the basis of our numerical results, we then fabricated a grating by laser drawing and determined its color separation efficiency. The grating was etched into quartz and had a six-level surface relief, a maximum groove depth of 5.75 m, and a period of 50μEm. Furthermore, we calculated the tolerances of fabrication errors in the depth and width directions that satisfy optimal design conditions for establishing guiding principles for the accurate fabrication of multilevel color separation gratings with deep grooves.抄録全体を表示PDF形式でダウンロード (2866K)
- |<
- <
- 1
- >
- >|