巻号一覧
35 巻, 2 号
選択された号の論文の11件中1～11を表示しています
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天野 浩2007 年 35 巻 2 号 p. 64
発行日: 2007/02/15
公開日: 2014/03/26
ジャーナル フリーPDF形式でダウンロード (202K) -
長濱 慎一2007 年 35 巻 2 号 p. 65-68
発行日: 2007/02/15
公開日: 2014/03/26
ジャーナル フリーThe development of optical memory devices that use violet laser diodes (LDs) has progressed significantly and these devices have been commercialized. The need for high-speed recording and multilayer recording is increasing, and it is expected that even higher power LDs will be necessary in the future. In this paper, the current state of GaN-based LD research for the next generation optical memory devices is reported, and next targets are discussed. Moreover, we developed high power pure blue laser diodes for full-color laser display. The details of these pure blue LDs characteristics are reported.抄録全体を表示PDF形式でダウンロード (718K) -
蔵本 恭介, 大野 彰仁, 山田 智雄, 岡川 広明, 川崎 和重2007 年 35 巻 2 号 p. 69-72
発行日: 2007/02/15
公開日: 2014/03/26
ジャーナル フリーExistence of large internal loss due to indium compositional fluctuation at InGaN well was shown experimentally. By adopting small optical confinement factor in the well layer (Γwell) to reduce optical absorption, the slope efficiency of the LD was improved from 1.5 W/A to 1.85 W/A (highest recorded). As a result, kink-free operation up to 300 mW at 80°C/CW was achieved.抄録全体を表示PDF形式でダウンロード (910K) -
宮地 護, 木村 義則, 尾上 篤2007 年 35 巻 2 号 p. 73-78
発行日: 2007/02/15
公開日: 2014/03/26
ジャーナル フリーWe developed a wafer-level integration process for multiple-wavelength laser diodes. This integration process allows highly accurate and proximal alignment of emission spots, as well as high mass-productivity. Using this process, we fabricated blue/red and red/infrared two-wavelength laser diodes. In these laser diodes, the distance between two emission spots was approximately 3μm. Furthermore we fabricated blue/red/infrared three-wavelength laser diode whose emission spots were aligned within 10μm distance. Such a short spot distance allows the optical components of the pickup to be substantially simplified.抄録全体を表示PDF形式でダウンロード (13764K) -
赤坂 哲也, 牧本 俊樹2007 年 35 巻 2 号 p. 79-85
発行日: 2007/02/15
公開日: 2014/03/26
ジャーナル フリーGaN microfacets have been grown by selective-area metalorganic vapor phase epitaxy (SA-MOVPE) and applied to GaN-based surface-emitting lasers. The crystal orientation of the microfacets was strictly controlled by the shapes of the mask-openings and growth conditions so that vertical and inclined microfacets were obtained. Hexagonal microprisms (HMPs) of GaN with 5-50μm in diameters have extremely smooth vertical side walls of GaN {10 1 0} microfacets. These GaN HMPs lase by optical pumping and have the inscribed hexagonal optical paths. Additionally, GaN-based horizontal cavity surface-emitting lasers (HCSELs) were successfully fabricated. The GaN-based HCSELs have Fabry-Perot cavity and outer micromirrors, which consist of SA-MOVPE grown {11 2 0} vertical and {11 2 2} inclined microfacets, and lased at room temperature by pulsed current injection. The laser beam emitted laterally from a Fabry-Perot cavity {11 2 0} vertical micromirror is reflected by a {11 2 2} inclined outer micromirror so as to be directed upward. The GaN-based HCSEL has a current-confining structure because the incorporation probability of p-type dopants (Mg) is strongly influenced by facet orientation (growth direction).抄録全体を表示PDF形式でダウンロード (12039K) -
齊藤 公博, 篠田 昌孝, 石本 努, 中沖 有克, 山本 眞伸2007 年 35 巻 2 号 p. 86-90
発行日: 2007/02/15
公開日: 2014/03/26
ジャーナル フリーNear-field recording/readout using a solid immersion lens (SIL) is capable of achieving a numerical aperture (NA) of greater than unity and a higher storage density than conventional optical disc systems. In near-field recording using a SIL, a material having a higher refractive index results in a smaller spot size, as does using a shorter wavelength light source. However, the conventionally used GaN 405-nm laser diode (LD) still has several advantages over shorter wavelength light sources; for example, it can achieve a higher recording density and it is possible to produce more reliable near-field recording/readout systems based on it. We describe a trial that seeks to achieve a higher data transfer rate using a 1.84-NA dual-channel near-field recording/readout system that employs a monolithic dual-beam blue LD.抄録全体を表示PDF形式でダウンロード (12806K) -
菅沼 敦2007 年 35 巻 2 号 p. 91-95
発行日: 2007/02/15
公開日: 2014/03/26
ジャーナル フリーWe have developed an advanced digital exposure system for the printed circuit board manufacturing industry. This system has DMD based optics combined with 405nm laser units designed using Fuji Film original technology so as to achieve both high productivity and high precision at the same time. Fuji Film has experience packing plural laser modules into a single unit for high power output. The laser source is led into the optical systems through optical fibers. The exposure engine has plural optics covering a width of 510 mm that enables scanning of the panel in a shuttle motion. As a result, the exposure time is only 10 seconds for 510×610mm-sized imaging in the case of 10 mJ sensitivity materials. The system can produce over 160 panels per hour, making it suitable for mass production in the industry.抄録全体を表示PDF形式でダウンロード (11169K) -
畑山 均, 井上 享, 明石 豪, 加藤 純二2007 年 35 巻 2 号 p. 96-99
発行日: 2007/02/15
公開日: 2014/03/26
ジャーナル フリーSeveral types of lasers have been used as surgical tools to incise or excise tissues without causing bleeding. For example, CO2 lasers are one of the most commonly used lasers in surgeries. They can effectively ablate tissues because the emitted light is efficiently absorbed by water molecules. AlGaAs and InGaAs laser diodes, which emit near infrared light, are preferable for hemostasis because near infrared light penetrates deeply into tissues and results in a thick coagulation layer. The 405-nm GaN laser diode is a newly developed laser that has recently been studied as a potential surgical tool. The emitted light is efficiently absorbed by proteins, such as hemoglobin, and melanin pigments. Due to these absorption characteristics, we expected the 405-nm laser diode to cut tissues effectively. In this study, irradiation of rat tongues and samples of tuna confirmed that the 405-nm laser diode can be used to effectively perform bloodless surgeries.抄録全体を表示PDF形式でダウンロード (4699K) -
植田 浩安, 前嶋 義夫, 辻本 裕, 徳村 啓雨, 實野 孝久2007 年 35 巻 2 号 p. 100-104
発行日: 2007/02/15
公開日: 2014/03/26
ジャーナル フリーThe wavefront distortion of a beam from a single-mode violet laser diode (VLD) with a collimator lens was measured and corrected to provide a precise focal spot. This output beam was focused on a plastic plate to which dyestuff or pigments were added to enable color micro-marking without an absorbent. The part irradiated by the laser was marked, and unfixed dyestuff or pigments were removed with ethyl alcohol. Using this VLD, color micro-marking of 100μm font size on the plastic plate was achieved.抄録全体を表示PDF形式でダウンロード (7155K) -
湯本 正樹, 前田 康大, 斎藤 徳人, 小川 貴代, 山下 正文, 和田 智之2007 年 35 巻 2 号 p. 105-108
発行日: 2007/02/15
公開日: 2014/03/26
ジャーナル フリーWe have demonstrated an electronically tuned Ti: sapphire laser, the wavelength of which was controlled by an acousto-optic tunable filter (AOTF). The features of the electronically tuned laser are a broad tuning range from 700 to 1000nm and a rapid and random-access tuning capability in addition to full computer-controlled oscillating wavelength and the emitting power. Furthermore the electronically tuned laser can simultaneously oscillate two wavelengths in its single cavity by feeding two independent radio frequencies (RFs) into the AOTF. Thus, this laser has high wavelength controllability. RF powers fed into the AOTF should be controlled to optimize the laser output power depending on the wavelength. Therefore, the wavelength drift generated by a temperature change of the AOTF is observed, and compensation for wavelength drift is required in highresolution spectroscopy. In this study, we attempted the stabilization of the wavelength drift by controlling the RFs power fed into the AOTF.抄録全体を表示PDF形式でダウンロード (652K) -
坂倉 政明, 寺嶋 正秀, 三浦 清貴, 平尾 一之2007 年 35 巻 2 号 p. 109-115
発行日: 2007/02/15
公開日: 2014/03/26
ジャーナル フリーStructural and energy dynamics after femtosecond laser irradiation inside glasses have been investigated by a transient lens (TrL) method. As the conventional TrL method is too simplistic to extract a complicated refractive index distribution (Δn), which is induced by focused femtosecond pulsed laser, we calculated the TrL signal based on the diffraction theory. From simulations of the observed TrL signal, we determined timedependence of pressure wave generation, pressure wave propagation, and thermal diffusion process. The material deformation and energy dissipation processes inside the material can be determined from this analysis of the TrL signal.抄録全体を表示PDF形式でダウンロード (1291K)
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