Journal of the Mass Spectrometry Society of Japan
Online ISSN : 1880-4225
Print ISSN : 1340-8097
ISSN-L : 1340-8097
Volume 25, Issue 4
Displaying 1-10 of 10 articles from this issue
  • Mayumi Someno, Mutsuhiro Kobayashi, Hiroshi Saito
    1977 Volume 25 Issue 4 Pages 263-277
    Published: December 15, 1977
    Released on J-STAGE: June 28, 2010
    JOURNAL FREE ACCESS
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  • Yuki Yaegashi, Seizo Nakajima
    1977 Volume 25 Issue 4 Pages 279-296
    Published: December 15, 1977
    Released on J-STAGE: March 01, 2011
    JOURNAL FREE ACCESS
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  • Kouzou Tsunoyama, Yoshiharu Ohashi, Toshiko Suzuki
    1977 Volume 25 Issue 4 Pages 297-304
    Published: December 15, 1977
    Released on J-STAGE: June 28, 2010
    JOURNAL FREE ACCESS
    A simple physical model is proposed for the process of positive ion emission during oxygen ion bombardment of a solid sample. The incident ions are assumed to develop the oxygen enhanced layer at the surface of target and give rise to the emission of diatomic molecules.These clusters of atoms tend to dissociate into atoms and/or emit electrons produce atomic and molecular ions during the process of sputtering.Expressions are given for the relative intensities of ions and are compared successfully with experimental data.
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  • Kenji Kusao, Yoshiaki Yoshioka, Fumiya Konishi
    1977 Volume 25 Issue 4 Pages 305-313
    Published: December 15, 1977
    Released on J-STAGE: March 01, 2011
    JOURNAL FREE ACCESS
    A quantitative analysis of oxidized elements in a solid surface which consists of and oxidized element has been studied using a SIMS equipped with a quadrupole mass filter. The apparatus is able to introduce gas into the specimen chamber in amounts high as 1×10-3 Torr without any problems for the primary beam system and the analyzer system by means of differential pumping techniques. The standard sample(Al, Si)composed of a pure and oxidized element is prepared by the method used for fabricating microelectronic devices. Ions such as Al+and Si+emitted from standard samples are represented by the linear superposition of ions emitted from the pure and oxidized element. The concentration of the oxidized element is determined by the ratio of the secondary ion intensity on exposure to oxygen to that on non-exposure to oxygen.
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  • Hisashi Kobayashi, Ken'ichi Suzuki, Yoshiaki Yanagisawa, Ken'ichi Yuka ...
    1977 Volume 25 Issue 4 Pages 315-323
    Published: December 15, 1977
    Released on J-STAGE: June 28, 2010
    JOURNAL FREE ACCESS
    A separating apparatus for the primary ion beam and the neutral particle beam which is attached to Ion Microanalyzer(IMA), is developed.And the characteristics of the neutral beam, such as the sputtering yields, the secondary ion yields and the beam density, are examined.The sputtering yields and the secondary ion yields of the oxygen neutral particle beam are the same as those of the O2+ion beam.The neutral particle beam density is depending-on the discharging condition of a hollow cathode ion gun. In addition, the analysis method using the neutral particle beam is discussed.This method not affected by the charge built up phenomena of a sample and is suitable for obtaining the stable mass spectra of the insulators such as glasses or organic materials.
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  • Development of the AES-IMA Device and its Application to Solid Surfaces(1)
    Hiroshi Doi
    1977 Volume 25 Issue 4 Pages 325-349
    Published: December 15, 1977
    Released on J-STAGE: June 28, 2010
    JOURNAL FREE ACCESS
    A combination system of SEM, AES and IMA are developed in one apparatus as a AES-IMA development(AID). A secondary ion mass spectrometer(SIMS)in the AID is a new type analyzer which is composed of an ion extractor system, a new stigmaticsecond order double focusing mass spectrometer and an electric spherical sector. Methods to increase the transmission of secondary ions, to reduce the background noise of the SIMS and to make the resolving power of the SIMS higher are investigated. This apparatus is applied to silicon device analysis, i. e. silicon single crystal doped boron, arsenic or antimony, LSI and IC.Mass spectra of silicon device and Auger spectra of aluminum and silicon are obtained simultaneous using of9keV argon ion and9keV electron microprobes, the ion microprobe and the electron microprobe. A surface of LSI device is observed as scanning electron microscopic, scanning ion microscopic and specific ion images. A confirmation of area bombarded by ion and a selection of area to be analyzed are proceeded with SEM.
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  • Hitoshi Tsuyama, Norikazu Hashimoto
    1977 Volume 25 Issue 4 Pages 351-362
    Published: December 15, 1977
    Released on J-STAGE: March 01, 2011
    JOURNAL FREE ACCESS
    Experimental study on the analysis of phosphorus and arsenic in silicon has beencarried out with Hitachi IMA-2type ion microanalyzer. It was found that the interfere of 30SiH+ and 29Si30SiO+ peaks were important problem for the analysis. The anal ytical conditions which minimize the production of silicon hydride ions have been studied. The intensity ratio31P+/28Si+on Si wafers(1017-1019 P atoms/cm3)was not propo rtional to the phosphorus concentration determined by wet chemical analysis. But in high concentration range, a normal caribration curve was obtained for P in Phospho silicate glasses with 0.5-7P2O5 mol %.
    The intensity ratio75As+/28Si on Si wafers(1016-1020As atoms/cm3)was not proportional to the arsenic concentration determined from the electric resistivities. But at higher concentration than 1020 atoms/cm, the intensity ratio for polycrystalline silicon films was proportional to the arsenic concentration determined by activation analysis. The minimum detectable limit of phosphorus and arsenic in silicon have been esti mated to be nearly 1017-1018 atoms/cm3.
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  • Norikazu Hashimoto, Hitoshi Tsuyama
    1977 Volume 25 Issue 4 Pages 363-370
    Published: December 15, 1977
    Released on J-STAGE: March 01, 2011
    JOURNAL FREE ACCESS
    Phosphorus and arsenic profiles in polycrystalline Si-SiO2-Si structures were studied by ion microanalyzer, sup Pressed of edge effects by electronic gating. The Pand As diffused in the poly-Si layer were very uniform and had atendency of pile-up at the ierface of poly-Si-Sio2. The oxides of highly doped poly-Si contained the same level of Pas in the poly-Si and in the case of As one-tenth of the initial concentration in the poly-Si layer.
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  • Yoshiki Suwa, Tadashi Kikuchi, Keiichi Furuya
    1977 Volume 25 Issue 4 Pages 371-378
    Published: December 15, 1977
    Released on J-STAGE: June 28, 2010
    JOURNAL FREE ACCESS
    A low energy secondary ion mass spectrometer was constructed. An argon ion gun was designed by the authors and a modefied quadrupole type mass analyser was used as a detector. The best operating condition was established as follows: ion accelerating voltage; 500V, argon pressure;5×16mm. Surface contamination on copper surface with abrasive materials were investigated for chemical etching with hydrochloric acid Al2O3powder emulsion polishing, Al2O3abrasing paper polishing and SiC abrasing paper polishing. The latter two methods gave very strong peak of27Al. The best result for positive ions was obtained with samples treated by chemical etching with hydrochloric acid.
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  • Michi Aratani, Kazue Tazaki
    1977 Volume 25 Issue 4 Pages 379-383
    Published: December 15, 1977
    Released on J-STAGE: March 01, 2011
    JOURNAL FREE ACCESS
    Measurements were made by means of secondary ion emission mass spectrometry on weathered plagioclase in volcanic ash soils.Layers from the weathered surface to the fresh bulk were examined under a moderate condition peeling, where energies and intensities of peeling ions were carefully maintained as low as possible not to give the sample any disturbances except peeling. The results obtained on the layers from the top surafce to the bulk were in good agreement with those by scanning electron micro scopy(SEM)with respect to the surface and those by electron probe microanalysis (EPMA)with respect to the bulk. Some of the results were presented partly at the related meetings.
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