Domain wall motion in Permalloy nanowires has been extensively investigated, because of its potential application in new types of memory devices. We injected a domain wall into permalloy nanowires to observe domain wall motion in the nanowires, and we observed the injection behavior from an extended injection pad by using a Landau-Lifshitz-Gilbert simulator (LLG) based on LLG equation. We found that the injection field was reduced by destroying the symmetry of the Permalloy nanowires. Specifically, the injection field reduced from 195 Oe to 60 Oe by shifting the nanowires away from the center of the disk and cutting away the top of the disk.

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