Nickel films newly formed by evaporation were kept at room temperature in high vacuum, and a decrease of the low-temperature (1833°C) adsorptionof nitrogenand a decrease of electrical resistance of films were observed. By the use of these phenomena, one might study the stabilization process of films formed under various conditions at various temperatures. Under proper assumptions, a rate equation was derived for the decrease of adsorption site and activation energies forstabilization were estimated. The results obtained are summarized as follows.
1) Films deposited on room temperature wall have higher stability than those on low, tem-perature (-183°C.) wall, while the presence of gas at evaporationhas no effect on the stability of the film.
2) The activation energy estimated from the nitrogen adsorption method is nearly the same as that estimated fromthe resistance decrease method, which indicates that nitrogen adsorption and excess scattering of conduction electrons are both mainly due to latticeimperfections.
抄録全体を表示