The radiation emitted from forward-biased GaAs p-n junction diodes has been studied at liquid-N
2 temperature.
Above 5, 000 A/cm
2, the emission intensity in a favored direction increases very rapidly and emission spectrum narrows markedly. Measurements of polarization of the beam show that
J||>
J⊥ and
J⊥. varies as
I2, where
J|| and
J⊥ are the emission intensities polarized with the electrical vector parallel and perpendicular to the junction plane, and
I is the forward current. This implies that spontaneous emission is amplified by stimulated transitions and a transverse electric mode is the most favored so that it is amplified further by multiple reflection at radiating surfaces.
At still larger currents (above 16, 000A/cm
2), coherent oscillation within the diodes occurs and narrow emission lines appear at about 8640Å. Relative intensity of these lines depends current, time and direction of observation.
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