Oyo Buturi

[title in Japanese]

Kikuo TAKAHASHI

1965 Volume 34 Issue 4 Pages 245
Published: April 10, 1965
Released on J-STAGE: February 09, 2009

DOIhttps://doi.org/10.11470/oubutsu1932.34.245

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Ultrasonic Transducer Elements

Otohiko NOMOTO

1965 Volume 34 Issue 4 Pages 246-258
Published: April 10, 1965
Released on J-STAGE: February 09, 2009

DOIhttps://doi.org/10.11470/oubutsu1932.34.246

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Atomization of Liquid in Electro-Static Field

Motokichi MORI, Masatoshi FUJIMORI

1965 Volume 34 Issue 4 Pages 259-264
Published: April 10, 1965
Released on J-STAGE: February 09, 2009

DOIhttps://doi.org/10.11470/oubutsu1932.34.259

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Falling thin stream of liquid is atomized in electro-static field. By high speed cinematography, the stream is found to undergo first snake motion, then sudden atomization. Analogy of swing of pendulum in electro-static field is used to explain the mechanism of such behavior of liquid.

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A Multi-channel Ternary Code Modulation System

Zenji KATAGATA, Morio AKIYAMA

1965 Volume 34 Issue 4 Pages 264-268
Published: April 10, 1965
Released on J-STAGE: February 09, 2009

DOIhttps://doi.org/10.11470/oubutsu1932.34.264

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Most code modulation systems involve complicated circuits. In order to avoid this disadvantage, ternary code modulation system has been developed. Codes of this particular system have a kind of ternary signals that are plus and minus pulse train and zero level signal. The plus pulse train occurs when the signal variation is over a unit level, minus pulse train when under unit level, and zero signal when equals to unit level. These ternary signals are made up simply of feedback integrator and trigger circuit. This system has the following advantages: (1) Circuit device is very simple, (2) Multi-channelizing is very easy and (3) Signal to noise ratio is improved in comparison with ΔM system. This system has a wide application in the field of applied physics such as in telemetering or remote controlling.

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Evaporated Thin Films of Iron Oxides

Isao TASHIRO, Hiroshi NOSÉ

1965 Volume 34 Issue 4 Pages 269-275
Published: April 10, 1965
Released on J-STAGE: February 09, 2009

DOIhttps://doi.org/10.11470/oubutsu1932.34.269

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Thin films of iron oxides are prepared by flash evaporation of iron oxides (Fe³O⁴ and γ-Fe²O₃), and their properties are investigated under various conditions of evaporation. The electrical resistivity is measured during and after evaporation. The crystal structure is examined by electron reflection diffraction and the magnetic property by ferromagnetic resonance. The crystal structure and electrical resistivity depend intensely on the substrate temperature T_s and filament temperature T_ƒ. When T_ƒ=1690°C and T_s<140°C, electron diffraction revealed spinel structure, but no ferromagnetic resonance was observed, which tells that the film is not wholly magnetic.

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A Novel Electrochemical Generation of Oxygen

Hiroshi SAKURAI, Masao ISHIKAW, Takakichi TAMIYA

1965 Volume 34 Issue 4 Pages 275-280
Published: April 10, 1965
Released on J-STAGE: February 09, 2009

DOIhttps://doi.org/10.11470/oubutsu1932.34.275

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The devised oxygen generating apparatus has as cathode a porous air diffusion electrode commonly employed in fuel cells and as anode a nickel plate. When air is supplied to the cathode, oxygen in the air gives rise to OH ions which are transferred through the electrolyte to the anode where oxygen is recovered. In this process, the single electrode potential at the anode is of the same value as in the case of electrolysis of water. On the other hand, the cathode potential which reduces O₂ to OH^- is nobler than that which reduces H⁺ to H₂ in water electrolysis. Consequently the overall -potential between the electrodes becomes lower than in the electrolytic process. Experiments showed that the power consumption is of the order of 2 KW-Hr/M³ of O₂ obtained, approximately one fifth of what is normally required in the electrolytic process. If improvement is made upon the air diffusion electrode, the power consumption may substantially be lowered and one may expect the electrochemical process to become more economical in running than the conventional fractionating process.

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Ge-ZnSe Heterojunction

Toshimi YAMATO

1965 Volume 34 Issue 4 Pages 281-290
Published: April 10, 1965
Released on J-STAGE: February 20, 2009

DOIhttps://doi.org/10.11470/oubutsu1932.34.281

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Various semiconductor heterojunctions, such as Ge-GaAs, Ge-GaP, GaAs-GaP, Ge-Si, ZnTe-CdS, etc., have recently been developed together with progress of epitaxial growth technique. These junctions aim at special characteristics which could not been obtained by semiconductor elements. The purpose of this study is to clarify the method of preparation of Ge-ZnSe heterojunction, which is a new pair, and its electric and photoelectric characteristics. In this experiment, ZnSe was transferred from high temperature zone to low temperature zone by disproportionation reaction (ZnI₂+1/2Se₂ ZnSe+I₂) in a transparent quartz tube and epitaxially grown on p-type Ge (111) surface. The properties of this junction depend especially on the seed temperature, and by electron diffraction patterns, polarity of thermoelectric motive force, current-voltage characteristics, breakdown voltage and photoelectric sensitivity, the best preparing temperature was confirmed to be 1000_??_1050°C for ZnSe source and above 800°C for Ge seed. Furthermore, the best junctions thus prepared showed the rectifying ratio of 1000:1 at one volt and the photosensitivity of 10 mA/lm covering the region of 0.8_??_2.0 μ in wavelength.

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[title in Japanese]

Kakuji YAMAMOTO

1965 Volume 34 Issue 4 Pages 291
Published: April 10, 1965
Released on J-STAGE: February 09, 2009

DOIhttps://doi.org/10.11470/oubutsu1932.34.291

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[title in Japanese]

[in Japanese]

1965 Volume 34 Issue 4 Pages 292
Published: April 10, 1965
Released on J-STAGE: February 09, 2009

DOIhttps://doi.org/10.11470/oubutsu1932.34.292

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[title in Japanese]

[in Japanese]

1965 Volume 34 Issue 4 Pages 293
Published: April 10, 1965
Released on J-STAGE: February 09, 2009

DOIhttps://doi.org/10.11470/oubutsu1932.34.293

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[title in Japanese]

[in Japanese]

1965 Volume 34 Issue 4 Pages 294
Published: April 10, 1965
Released on J-STAGE: February 09, 2009

DOIhttps://doi.org/10.11470/oubutsu1932.34.294

JOURNAL FREE ACCESS

Download PDF (896K)
[title in Japanese]

[in Japanese]

1965 Volume 34 Issue 4 Pages 295
Published: April 10, 1965
Released on J-STAGE: February 09, 2009

DOIhttps://doi.org/10.11470/oubutsu1932.34.295

JOURNAL FREE ACCESS

Download PDF (854K)
[title in Japanese]

[in Japanese]

1965 Volume 34 Issue 4 Pages 296
Published: April 10, 1965
Released on J-STAGE: February 09, 2009

DOIhttps://doi.org/10.11470/oubutsu1932.34.296

JOURNAL FREE ACCESS

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Sintering Mechanism of Ceramics

Ryoiti KIRIYAMA, Fumikazu KANAMARU

1965 Volume 34 Issue 4 Pages 297-303
Published: April 10, 1965
Released on J-STAGE: February 09, 2009

DOIhttps://doi.org/10.11470/oubutsu1932.34.297

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Fluctuation and Semi-Conductor

Susumu OKAZAKI

1965 Volume 34 Issue 4 Pages 304-306
Published: April 10, 1965
Released on J-STAGE: February 09, 2009

DOIhttps://doi.org/10.11470/oubutsu1932.34.304

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