Thin films of Ta, Nb and Pt are prepared on glass substrates by the cathode sputtering method in an atmosphere of argon. The sputtering is carried out at argon pressures of 3, 5 and 8×10
-2 Torr. and at electrode distances,
d, of 2.3, 3 and 4cm. The sputtered amount,
Q0, from the cathode, is derived as a function of ion energy, which is related linearly to applied voltage
V in the case of glow discharge at low pressure. In our experimental range, the deposited amount,
Q, on the substrate, is proportional to the sputtered amount with the relation
Q∝
Q0/
dn (
n=0.5_??_2), and the effect of argon pressure on the deposited amount is hardly detectable. It is shown that according to our results, the deposited amount is proportional to
V2.5 in the high energy region, and
V4 in the low energy region.
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