Doped single crystals of VO
2/ M were prepared by a modified oxychrolide decomposition method, where M stands for Ti, Nb, Si, Ge and Sn. X-ray observation revealed that all the samples show MoO
2 type structure at room temperature as with undoped VO
2. Resistivity ρ and thermoelectric power η were measured between 100° and 400°K on several doped crystals. The values of ρ and η change abruptly at transition temperature T
t as in the case of undoped VO
2. Increase of Tt was observed with VO
2 containing Si, Ge and So, while decrease of
Tt was observed with Nb or Ti. In terms of Adler's and Hanamura's model the shifts of
Tt seem to be caused by the lattice distortion introduced with dopants.
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