Dislocations were introduced on the surface of a P/N-type Si solar cell by indenting it with a loaded diamond point and simultaneously annealing it. Increases of nonsaturable reverse current and of
n value in forward characteristic,
I0(e(qV/nkT)-1), were observed on the indented cells. In another type of cell, dislocations were introduced from the back surface by thermal annealing after the mechanically damaged layer was formed by the air blasting method. On this cell, small increase of
n values and of reverse current were observed. The degradation of minority carrier life time and the proportional factors of defect introduction rate,
Δ(1/τ)=1/τ
7-1/τ
0, of these dislocation-introduced cells were smaller than those of the normal cells under γ-irradiation. The interaction between defects and dislocations are considered from the isochronal annealing characteristics.
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