During the years, the physics and technologies of ion-implantation have been extending and showing many fruitful results on silicon. Now it should be proceeded to other materials, especially to the compound semiconductors. However, most of the compound semiconductor shows different behaviors from monoatomic and covalent silicon crystals, which have diatomic and ionic features in their bonding states. Even in the case of thermal diffusion of impurities into a material, the mechanism is much peculiar compared to that of silicon. It is natural that the remarkable phenomena different from that of silicon are there in ion-implantation of compound semidonductors.
I have pointed out their several evidences in which there reveal many interesting physical new observations and applications to devices. I assumed some plausible mechanisms on these phenomena and presented some suggestions which might be opened the way to new physics and technologies of compound semiconductors.
Materials mainly used in this report are GaAs, GaP, GaAs
1-
xP
x and CdF
2, CdS, and topics contained in the report are the luminescence spectra of Zn implanted and post-annealed GaAs
1-
xP
x localized states produced by ion-implantation into ionic compound, nature of random lattice states of heavily implanted GaP and GaAs, N
+ hot-implantation of GaP and related topics included my proposals to an aproach for ion-implantation mechanism such as thermochemical ones.
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