Oxide growth kinetics of SiO
2 films grown on silicon in an O
2/N
2 mixture is empirically studied. It is found that a parabolic law is obtained at 10
-2 atm of oxygen partial pressure PO., and an inverse-logarithmic law at 10
-3 atm. The Mott-Cabrera oxidation rate equation is adapted to the thermal oxidation of silicon in the case of P
02≥10
-2 atm, and the Mott-Cabrera's rate constants are determined. Finally, a value of 1. 90 eV is derived as the activation energy of silicon atoms entering into the oxide.
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